Abstract: A method of etching silicon oxide on a surface of a substrate is provided. The method comprises alternately repeating heating the substrate to a heating temperature of 60° C. or higher, supplying hydrogen fluoride gas and ammonia gas onto the substrate to react with the silicon oxide, and modifying the silicon oxide to obtain a reaction product, and removing at least a portion of the reaction product from the substrate while stopping the supply of the above gases and continuing to heat the substrate at the heating temperature; and when a process gas that is at least one of the hydrogen fluoride gas and the ammonia gas is supplied, while continuing to supply the process gas from an upstream side of a flow path, closing a valve disposed in the flow path to pressurize the process gas in the flow path, and then opening the valve.

Abstract: A method of etching silicon oxide on a surface of a substrate is provided. The method comprises alternately repeating heating the substrate to a heating temperature of 60° C. or higher, supplying hydrogen fluoride gas and ammonia gas onto the substrate to react with the silicon oxide, and modifying the silicon oxide to obtain a reaction product, and removing at least a portion of the reaction product from the substrate while stopping the supply of the above gases and continuing to heat the substrate at the heating temperature; and when a process gas that is at least one of the hydrogen fluoride gas and the ammonia gas is supplied, while continuing to supply the process gas from an upstream side of a flow path, closing a valve disposed in the flow path to pressurize the process gas in the flow path, and then opening the valve.

Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.

Abstract: There is provided a method of performing a surface treatment with respect to a metal mounting table for mounting a substrate to be plasma-processed, the mounting table functioning as a lower electrode configured to generate a plasma by a high frequency power applied between an upper electrode and the lower electrode. The method includes: performing a first surface treatment by spraying a non-sublimation blast material as a non-sublimation material onto a mounting surface of the metal mounting table on which the substrate is mounted, followed by a second surface treatment by spraying a sublimation blast material as a sublimation material onto the mounting surface.

Abstract: A vacuum processing apparatus for processing a substrate under a vacuum atmosphere includes a vacuum processing module, a vacuum transfer module, a gate valve and a control unit. The vacuum processing module includes a processing chamber, a mounting table and a first gas supply unit. The vacuum transfer module includes a transfer chamber airtightly connected to the processing chamber through the transfer port, a transfer unit and a second gas supply unit. The gate valve is configured to open and close the transfer port for the substrate. The control unit is configured to open the gate valve in a state where a flow rate of an inert gas supplied from the first gas supply unit is smaller than a flow rate of an inert gas supplied from the second gas supply unit and a pressure in the processing chamber is lower than a pressure in the transfer chamber.

Abstract: A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.

Abstract: The present invention provides an apparatus for manufacturing a lithium-ion secondary cell negative-electrode carbon material by heat-treating carbon particles while causing the carbon particles to flow within a heat-treatment furnace, the apparatus for manufacturing a lithium-ion secondary battery negative-electrode carbon material having: a heat-treatment furnace provided with a carbon-particle supply opening for supplying the carbon particles into the interior, and a negative-electrode carbon material recovery opening for taking out the negative-electrode carbon material from the interior; and a cooling tank connected in an airtight manner to the negative-electrode carbon material recovery opening of the heat-treatment furnace, and provided with a cooling means. Also provided is a method for manufacturing a lithium-ion secondary battery negative-electrode carbon material by using the apparatus.

Abstract: An apparatus for manufacturing a lithium-ion secondary cell negative-electrode carbon material by heat-treating carbon particles while causing the carbon particles to flow within a heat-treatment furnace, the apparatus having a heat-treatment furnace provided with a carbon-particle supply opening for supplying the carbon particles into the interior, and a negative-electrode carbon material recovery opening for taking out the negative-electrode carbon material from the interior and a cooling tank connected in an airtight manner to the negative-electrode carbon material recovery opening of the heat-treatment furnace, and provided with a cooling means.

Abstract: A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.

Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.

Abstract: An apparatus for manufacturing a lithium-ion secondary cell negative-electrode carbon material by heat-treating carbon particles while causing the carbon particles to flow within a heat-treatment furnace, the apparatus having a heat-treatment furnace provided with a carbon-particle supply opening for supplying the carbon particles into the interior, and a negative-electrode carbon material recovery opening for taking out the negative-electrode carbon material from the interior and a cooling tank connected in an airtight manner to the negative-electrode carbon material recovery opening of the heat-treatment furnace, and provided with a cooling means.

Abstract: A vacuum processing apparatus for processing a substrate under a vacuum atmosphere includes a vacuum processing module, a vacuum transfer module, a gate valve and a control unit. The vacuum processing module includes a processing chamber, a mounting table and a first gas supply unit. The vacuum transfer module includes a transfer chamber airtightly connected to the processing chamber through the transfer port, a transfer unit and a second gas supply unit. The gate valve is configured to open and close the transfer port for the substrate. The control unit is configured to open the gate valve in a state where a flow rate of an inert gas supplied from the first gas supply unit is smaller than a flow rate of an inert gas supplied from the second gas supply unit and a pressure in the processing chamber is lower than a pressure in the transfer chamber.

Abstract: There is provided a method of performing a surface treatment with respect to a metal mounting table for mounting a substrate to be plasma-processed, the mounting table functioning as a lower electrode configured to generate a plasma by a high frequency power applied between an upper electrode and the lower electrode. The method includes: performing a first surface treatment by spraying a non-sublimation blast material as a non-sublimation material onto a mounting surface of the metal mounting table on which the substrate is mounted, followed by a second surface treatment by spraying a sublimation blast material as a sublimation material onto the mounting surface.

Abstract: A negative electrode material for lithium ion secondary batteries comprises amorphous coated particles that are composed of a plurality of consolidated particles having no specific shape, said consolidated particles being obtained by consolidating a plurality of primary spheroidized graphite particles, and 0.5-20% by mass of an amorphous carbon layer that covers the surfaces of the consolidated particles and binds the consolidated particles with each other; and 0.5-20% by mass of a highly crystalline carbon layer that is formed so as to cover the outer surfaces of the amorphous coated particles and has an interplanar distance ascribed to CVD processing of 0.335 nm or more but less than 0.3369 nm. The negative electrode material for lithium ion secondary batteries is also characterized by having a porosity of 5% by volume or less, and a method for producing the negative electrode material for lithium ion secondary batteries.

Abstract: The present invention provides an apparatus for manufacturing a lithium-ion secondary cell negative-electrode carbon material by heat-treating carbon particles while causing the carbon particles to flow within a heat-treatment furnace, the apparatus for manufacturing a lithium-ion secondary battery negative-electrode carbon material having: a heat-treatment furnace provided with a carbon-particle supply opening for supplying the carbon particles into the interior, and a negative-electrode carbon material recovery opening for taking out the negative-electrode carbon material from the interior; and a cooling tank connected in an airtight manner to the negative-electrode carbon material recovery opening of the heat-treatment furnace, and provided with a cooling means. Also provided is a method for manufacturing a lithium-ion secondary battery negative-electrode carbon material by using the apparatus.

Abstract: A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates.

Abstract: For depositing a metallic film, the following steps are repeatedly conducted: a step in which a precoat film is formed on the inside of a chamber; a step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon by introducing each substrate into the precoated chamber, placing the substrate on the stage, feeding a treating gas while heating the substrate to generate a plasma of the treating gas, and depositing a metallic film on the substrate by plasma CVD; and a step in which after the film deposition on the substrates has been completed, a cleaning gas is introduced into the chamber to conduct dry cleaning. In the step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon, a conductive film is formed on the stage one or more times in the course of the step.

Abstract: A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates.

Abstract: A negative electrode material for lithium ion secondary batteries comprises amorphous coated particles that are composed of a plurality of consolidated particles having no specific shape, said consolidated particles being obtained by consolidating a plurality of primary spheroidized graphite particles, and 0.5-20% by mass of an amorphous carbon layer that covers the surfaces of the consolidated particles and binds the consolidated particles with each other; and 0.5-20% by mass of a highly crystalline carbon layer that is formed so as to cover the outer surfaces of the amorphous coated particles and has an interplanar distance ascribed to CVD processing of 0.335 nm or more but less than 0.3369 nm. The negative electrode material for lithium ion secondary batteries is also characterized by having a porosity of 5% by volume or less, and a method for producing the negative electrode material for lithium ion secondary batteries.

Abstract: For depositing a metallic film, the following steps are repeatedly conducted: a step in which a precoat film is formed on the inside of a chamber; a step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon by introducing each substrate into the precoated chamber, placing the substrate on the stage, feeding a treating gas while heating the substrate to generate a plasma of the treating gas, and depositing a metallic film on the substrate by plasma CVD; and a step in which after the film deposition on the substrates has been completed, a cleaning gas is introduced into the chamber to conduct dry cleaning. In the step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon, a conductive film is formed on the stage one or more times in the course of the step.