Abstract: Provided is a resin which is excellent in terms of solubility in common solvents, crosslinking temperature, time required for crosslinking, solvent resistance (cracking resistance), breakdown voltage, leakage current, solvent wettability, and planarity in cases where the resin is formed into a thin film. A resin which comprises repeating units represented by formula (1) and formula (2), and wherein the repeating unit represented by formula (2) is contained in an amount of 20% by mole or more relative to the total amount of the repeating units represented by formula (1) and formula (2).

Abstract: The present invention provides a resin which enables the production of an organic field effect transistor element which has excellent resistance to bias stress by being used as a gate insulating film layer for an organic field effect transistor. The present invention provides a resin which comprises a repeating unit represented by Formula (1) and a repeating unit represented by Formula (2), wherein: the repeating unit represented by Formula (2) has a HOMO level of ?6.4 eV or less; and 20% by mole or more of the repeating unit represented by Formula (2) is contained relative to the total amount of the repeating unit represented by Formula (1) and the repeating unit represented by Formula (2).

Abstract: Provided is a fluorine-based resin that has liquid-repellency and high solubility in a fluorine-based solvent, and becomes insoluble in the solvent by photocrosslinking at low light exposure intensity. A fluorine-based resin of the present invention includes: a repeating unit that is represented by Formula (1) including a photocrosslinkable group; and a repeating unit that includes a fluorine atom, where R1 represents hydrogen or methyl, L1 represents a single bond or a linking group, A represents a linking group, and R2 through R6 represent one selected from the group consisting of hydrogen, halogen, alkyl, alkyl halide, alkoxy, aryl, aryloxy, cyano, and amino.

Abstract: An aromatic compound which is represented by formula (1-I) or (1 -II). In formulae (1-I) and (1-II), Ar represents a monocyclic ring or the like; each of X1 and X2 represents an oxygen atom or the like; each of Y1 and Y2 represents CR6 or the like; each of R1 to R6 represents a hydrogen atom or the like; and at least one of the R1 to R6 moieties is a group that is represented by formula (2). In formula (2), A represents a specific alkenyl group or the like; each of 1 and n represents 0 or 1; m represents an integer from 1 to 20; and each of Z1 and Z2 represents a hydrogen atom or the like.

Abstract: Provided is a resin which is excellent in terms of solubility in common solvents, crosslinking temperature, time required for crosslinking, solvent resistance (cracking resistance), breakdown voltage, leakage current, solvent wettability, and planarity in cases where the resin is formed into a thin film. A resin which comprises repeating units represented by formula (1) and formula (2), and wherein the repeating unit represented by formula (2) is contained in an amount of 20% by mole or more relative to the total amount of the repeating units represented by formula (1) and formula (2).