Abstract: According to one embodiment, a semiconductor device manufacturing method includes forming a stacked film with alternating first-type sacrificial layers and second-type sacrificial layers, then removing the first-type sacrificial layers from the stacked film to leave the second-type sacrificial layers with spaces therebetween. The second-type sacrificial layers are then each replaced with an insulating layer after removing the first-type sacrificial layers. After the second-type sacrificial layers are replaced with the insulating layer, a conductive layer is formed inside the spaces formed by removing the first-type sacrificial layers.

Abstract: A plurality of cassettes are each allowed to supply drug within a certain range of dimensions. A plurality of drivers are each mountable with each of the cassettes and drive the cassettes mounted thereto. The controller controls the drivers individually. The controller allocates drug information of a target drug to the cassette selected in accordance with dimensions of the target drug or to the driver mounted with the cassette thus selected. The controller controls the drivers so that the target drug is supplied from the cassette to which the drug information has been allocated or the driver mounted with the cassette to which the drug information has been allocated.

Abstract: A semiconductor device includes a substrate 15, a first insulating film 13 provided above the substrate 15, a second insulating film 14 disposed between the substrate 15 and the first insulating film 13, a first metal pad 41 provided in the first insulating film 13, and a second metal pad 38 provided in the second insulating film 14, the second metal pad 38 being bonded to the first metal pad 41. A concentration of silicon atoms in a bonded portion B of the first metal pad 41 and the second metal pad 38 is greater than a concentration of silicon atoms in a first portion P1 of the first metal pad 41 and is greater than a concentration of silicon atoms in a second portion P2 of the second metal pad 38.

Abstract: A power storage device includes: a plurality of bipolar electrodes being stacked, each of the plurality of bipolar electrodes including a collector having a first surface and a second surface opposite to the first surface, a positive electrode layer provided on the first surface, and a negative electrode layer provided on the second surface; a first resin member provided on at least one surface of the first surface and the second surface in at least a portion of an outer peripheral portion of the collector; and a second resin member provided on the first resin member and supporting the outer peripheral portion of the collector via the first resin member. The respective first resin members for the bipolar electrodes adjacent to each other in a stacking direction of the plurality of bipolar electrodes are connected to each other by a welded portion.

Abstract: A device includes a substrate having a first-face and a second-face. An electrode is provided in a through hole that penetrates through the substrate between the first-face and the second-face. A first-insulator is provided in the substrate and protrudes in a radial direction from an opening end of the through hole on a side close to the second-face to a center of the through hole as viewed from above the first-face. A second-insulator protrudes in the radial direction from the first-insulator as viewed from above the first-face, is thinner than the first-insulator, and is in contact with the electrode. A third-insulator is provided between an inner wall of the through hole and the electrode, and includes a first-portion that is in contact with the first-insulator and a second-portion that is in contact with the inner wall of the through hole and is closer to the second-face than the first-portion.

Abstract: A semiconductor laser device includes a laser section and a modulator section. The laser section has: a first mesa stripe which is formed on a semiconductor substrate; semi-insulative burying layers which are placed to abut on both side surfaces of the first mesa stripe and are formed on the semiconductor substrate; n-type burying layers formed on respective surfaces of the semi-insulative burying layers; and a p-type cladding layer which covers surfaces of the n-type burying layers and the first mesa stripe. The modulator section has: a second mesa stripe which is formed on the semiconductor substrate; semi-insulative burying layers which are placed to abut on both side surfaces of the second mesa stripe and are formed on the semiconductor substrate; and a p-type cladding layer which covers surfaces of the semi-insulative burying layers and the second mesa stripe.

Abstract: A semiconductor device includes a stacked film including a plurality of electrode layers and a plurality of insulating layers alternately stacked in a first direction and a columnar portion including a charge storage layer and a first semiconductor layer and extending in the first direction in the stacked film. The device further includes a second semiconductor layer provided on the stacked film and the columnar portion, and at least a part of regions in the second semiconductor layer contains phosphorus having an atomic concentration of 1.0×1021/cm3 or more and hydrogen having an atomic concentration of 1.0×1019/cm3 or less.

Abstract: The present invention provides a novel IL-1? and/or IL-6 expression inhibitor and use thereof. The IL-1? and/or IL-6 expression inhibitor in accordance with an aspect of the present invention contains a component derived from alcoholic fermentation lees.

Abstract: A semiconductor device includes: a stacking part in which the plurality of conductor layers are separately stacked in a z direction; a stair part that is arranged alongside the stacking part in a y direction and in which the plurality of conductor layers are extended in the y direction in a stair shape; a first insulating film covering at least part of the stair part; a second insulating film covering at least part of the first insulating film and different from the first insulating film; and a contact connected with one of the plurality of conductor layers and penetrating through the first insulating film and the second insulating film. The linear expansion coefficient of the second insulating film is larger than the linear expansion coefficient of the first insulating film.

Abstract: An electro-absorption modulator of the invention is an electro-absorption modulator which is formed on an InP substrate and modulate incident light according to a voltage applied to that modulator, and which comprises a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage; wherein the light absorbing layer is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi.

Abstract: A device includes a substrate having a first-face and a second-face. An electrode is provided in a through hole that penetrates through the substrate between the first-face and the second-face. A first-insulator is provided in the substrate and protrudes in a radial direction from an opening end of the through hole on a side close to the second-face to a center of the through hole as viewed from above the first-face. A second-insulator protrudes in the radial direction from the first-insulator as viewed from above the first-face, is thinner than the first-insulator, and is in contact with the electrode. A third-insulator is provided between an inner wall of the through hole and the electrode, and includes a first-portion that is in contact with the first-insulator and a second-portion that is in contact with the inner wall of the through hole and is closer to the second-face than the first-portion.

Abstract: A method of manufacturing a semiconductor device includes depositing a first insulation film in a via hole of a semiconductor substrate and above a first surface thereof, the semiconductor substrate having a circuit substrate on a second surface thereof, depositing a second insulation film having a covering property lower than the first insulation film in the via hole and above the first surface, and removing the first and second insulation films deposited at the bottom of the via hole by anisotropic etching.

Abstract: An electro-absorption modulator of the invention is an electro-absorption modulator which is formed on an InP substrate and modulate incident light according to a voltage applied to that modulator, and which comprises a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage; wherein the light absorbing layer is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi.

Abstract: In one embodiment, the semiconductor device includes a first insulator including Si (silicon) and O (oxygen). The device further includes a first interconnect provided in the first insulator and including a metal element. The device further includes a second insulator provided on the first insulator and the first interconnect and including Si, C (carbon) and N (nitrogen), content of Si—H groups (H represents hydrogen) in the second insulator being 6.0% or less, content of Si—CH3 groups in the second insulator being 0.5% or less. The device further includes a second interconnect provided on the first interconnect in the second insulator and including the metal element.

Abstract: The present invention provides a novel IL-1? and/or IL-6 expression inhibitor and use thereof. The IL-1? and/or IL-6 expression inhibitor in accordance with an aspect of the present invention contains a component derived from alcoholic fermentation lees.

Abstract: A method of manufacturing a semiconductor device includes depositing a first insulation film in a via hole of a semiconductor substrate and above a first surface thereof, the semiconductor substrate having a circuit substrate on a second surface thereof, depositing a second insulation film having a covering property lower than the first insulation film in the via hole and above the first surface, and removing the first and second insulation films deposited at the bottom of the via hole by anisotropic etching.

Abstract: According to some embodiments, a semiconductor device includes a semiconductor substrate, a metal portion, a first insulating film, and a second insulating film. The semiconductor substrate has a through-hole extending from a first surface of the semiconductor substrate to a second surface thereof opposite to the first surface. The metal portion is formed in the through-hole. The first insulating film is provided on the second surface of the semiconductor substrate and on a side surface of the through-hole. The second insulating film has a dielectric constant of not more than 6.5 and is provided on a metal portion-side surface of the first insulating film on the side surface of the through-hole of the semiconductor substrate.

Abstract: An embodiment of the present invention prevents false detection of lifting. An embodiment of the present invention includes: an angle determination section (62) configured to determine whether or not an angle of a longitudinal direction of a mobile terminal (1) with respect to a vertical direction is less than or equal to a predetermined value; and a lifting determination section (65) configured to determine whether or not the mobile terminal (1) has been lifted, the lifting determination section carrying out determination in (i) a case where the angle of the longitudinal direction of the electronic device with respect to the vertical direction is greater than the predetermined angle and (ii) a case where (a) the angle of the longitudinal direction of the electronic device with respect to the vertical direction is less than or equal to the predetermined angle and (b) an acceleration of the electronic device in the longitudinal direction satisfies a predetermined condition.

Abstract: A semiconductor laser device includes a laser section and a modulator section. The laser section has: a first mesa stripe which is formed on a semiconductor substrate; semi-insulative burying layers which are placed to abut on both side surfaces of the first mesa stripe and are formed on the semiconductor substrate; n-type burying layers formed on respective surfaces of the semi-insulative burying layers; and a p-type cladding layer which covers surfaces of the n-type burying layers and the first mesa stripe. The modulator section has: a second mesa stripe which is formed on the semiconductor substrate; semi-insulative burying layers which are placed to abut on both side surfaces of the second mesa stripe and are formed on the semiconductor substrate; and a p-type cladding layer which covers surfaces of the semi-insulative burying layers and the second mesa stripe.

Abstract: An embodiment of the present invention provides an information processing device which reduces the possibility of a false detection of lifting of an electronic device. A standstill determination section (63) determines that a standstill condition is satisfied in a case where a dispersion of acceleration detected by an acceleration sensor (11) is (i) within a predetermined standstill reference range and (ii) outside a predetermined complete standstill reference range. Then, in a case where the standstill determination section (63) determines that the standstill condition is satisfied, a lifting determination section determines that an electronic device (1) has been lifted.