Patents by Inventor Shinya Otomo

Shinya Otomo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor device, production method thereof, diode, and field effect transistor
    Patent number: 9911842
    Abstract: A nitride semiconductor device includes; a semiconductor stack configured with a plurality of semiconductor layers made of nitride semiconductors provided on a base having a conductive portion; a first electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack; a second electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack separately from the first electrode; a first wiring provided at an upper layer of the first electrode; and a second wiring provided at an upper layer of the second electrode. A low permittivity area being a portion of which permittivity is lower than permittivities of the nitride semiconductors configuring the semiconductor stack at a lower layer of a portion of at least one of the first electrode and the second electrode other than a portion being junctioned with the semiconductor stack electrically.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: March 6, 2018
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Kazuyuki Umeno, Shinya Otomo, Keishi Takaki, Jiang Li, Takuya Kokawa, Ryosuke Tamura, Masayuki Iwami, Shusuke Kaya, Hirotatsu Ishii
  • NITRIDE SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREOF, DIODE, AND FIELD EFFECT TRANSISTOR
    Publication number: 20160225889
    Abstract: A nitride semiconductor device includes; a semiconductor stack configured with a plurality of semiconductor layers made of nitride semiconductors provided on a base having a conductive portion; a first electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack; a second electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack separately from the first electrode; a first wiring provided at an upper layer of the first electrode; and a second wiring provided at an upper layer of the second electrode. A low permittivity area being a portion of which permittivity is lower than permittivities of the nitride semiconductors configuring the semiconductor stack at a lower layer of a portion of at least one of the first electrode and the second electrode other than a portion being junctioned with the semiconductor stack electrically.
    Type: Application
    Filed: April 13, 2016
    Publication date: August 4, 2016
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Kazuyuki UMENO, Shinya Otomo, Keishi Takaki, Jiang Li, Takuya Kokawa, Ryosuke Tamura, Masayuki Iwami, Shusuke Kaya, Hirotatsu Ishii