Abstract: A checksum addition method includes obtaining a command and an address transmitted from a request source; reading data from the address according to the command; calculating a checksum to be added to the data; and transmitting the checksum and the data to the request source, wherein the calculating calculates the checksum in a data unit according to a type of the command.

Abstract: A switched capacitor circuit includes a first charge-to-voltage converter including a first capacitor to operate in a first period to convert a first charge into a first output voltage. The switched capacitor circuit includes a second charge-to-voltage converter including a second capacitor to operate in a second period to convert a second charge into a second output voltage, the second period being different from the first period. The switched capacitor circuit includes a shield interconnect disposed between the first capacitor and the second capacitor, the shield interconnect having a constant potential.

Abstract: The detecting device includes a detecting unit including a first electrode and a second electrode, the first electrode and the second electrode being used as a first capacitor. The detecting device includes a drive unit configured to apply a first drive signal to the first drive terminal such that the first drive signal is alternately inverted between a first period and a second period. The detecting device includes a converting unit configured to convert a charge charged at the signal terminal into a voltage and includes a difference processing unit configured to obtain a difference between the first output voltage and the second output voltage.

Abstract: An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

Abstract: In a back-illuminated solid-state image pickup device, a first group of charge transfer electrodes (vertical shift register) is present in an imaging region, and a second group of charge transfer electrodes (horizontal shift register) is present in a peripheral region around the imaging region. The light incident surface of the semiconductor substrate 4 corresponding to the peripheral region is etched, and an inorganic light shielding substance SH is filled in the etched region. The amount of the inorganic light shielding substance that evaporates and vaporizes under the vacuum environment is extremely small, and the influence on the imaging by the vaporized gas is small.

Abstract: The detecting device includes a detecting unit including a first electrode and a second electrode, the first electrode and the second electrode being used as a first capacitor. The detecting device includes a drive unit configured to apply a first drive signal to the first drive terminal such that the first drive signal is alternately inverted between a first period and a second period. The detecting device includes a converting unit configured to convert a charge charged at the signal terminal into a voltage and includes a difference processing unit configured to obtain a difference between the first output voltage and the second output voltage.

Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

Abstract: An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Abstract: A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

Abstract: In a back-illuminated solid-state image pickup device, first charge transfer electrode groups (vertical shift register) are present in an imaging region, and second charge transfer electrode groups (horizontal shift register) are present in a peripheral region of the imaging region. The light incident surface of the semiconductor substrate 4 corresponding to the peripheral region is etched, and an inorganic light shielding substance SH is filled in the etched region. The amount of the inorganic light shielding substance that evaporates and vaporizes under the vacuum environment is extremely small, and the influence on the imaging by the vaporized gas is small.

Abstract: A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Abstract: A solid-state imaging device includes photoelectric converting sections transfer sections first buffer sections second buffer sections first output sections, and second output sections. The photoelectric converting sections generate electric charges in response to incidence of light. The transfer sections transfer the generated electric charges in a first direction or in a second direction opposite thereto in response to three-phase or four-phase drive signals. The first buffer sections and the second buffer sections acquire the electric charges transferred in the first and second directions, respectively, by the transfer sections and transfer the acquired electric charges in the first and second directions, respectively, in response to two-phase drive signals. The first output sections and the second output sections acquire the electric charges transferred from the first buffer sections and from the second buffer sections respectively, and output signals according to the acquired electric charges.

Abstract: The present invention relates to a composition for promoting differentiation of pluripotent stem cells into cardiac muscle cells, and a method for inducing differentiation of pluripotent stem cells into cardiac muscle cells and a method for preparing cardiac muscle cells.

Abstract: A solid-state imaging device includes photoelectric converting sections transfer sections first buffer sections second buffer sections first output sections, and second output sections. The photoelectric converting sections generate electric charges in response to incidence of light. The transfer sections transfer the generated electric charges in a first direction or in a second direction opposite thereto in response to three-phase or four-phase drive signals. The first buffer sections and the second buffer sections acquire the electric charges transferred in the first and second directions, respectively, by the transfer sections and transfer the acquired electric charges in the first and second directions, respectively, in response to two-phase drive signals. The first output sections and the second output sections acquire the electric charges transferred from the first buffer sections and from the second buffer sections respectively, and output signals according to the acquired electric charges.