Abstract: A reinforcement is formed into an elongated shape, and includes a reinforcement body in which a housing part opened toward an outer peripheral side is formed and a covering part attached to close an opening of the housing part. A module component which is an electrical component or a wiring component may be housed in the reinforcement while being attached to the covering part.

Abstract: A wire harness includes an electrical wire, a sheet material welded to an insulating covering of the electrical wire disposed on a main surface, and a cover fixed to the sheet material. The cover covers at least part of the electrical wire disposed on the sheet material along a longitudinal direction of the electrical wire from an opposite side of the electrical wire from the sheet material.

Abstract: An electrical component-attached wire harness includes a base material disposed in a vehicle, a wire harness disposed along the base material, and at least one electrical component to which an end portion of the wire harness is connected. For example, the at least one electrical component may include an electronic control unit.

Abstract: A wire harness includes an electrical wire, a sheet material welded to an insulating covering of the electrical wire disposed on a main surface, and a cover fixed to the sheet material. The cover covers at least part of the electrical wire disposed on the sheet material along a longitudinal direction of the electrical wire from an opposite side of the electrical wire from the sheet material.

Abstract: A protector made of a hollow plate material is externally fitted to an electric wire arranged at a position at which a load is exerted. A protector-equipped electric wire is provided with an electric wire arranged at a position at which a load is exerted, and a protector externally fitted to the electric wire. The protector is made of a folded hollow plate material, the hollow plate material including a plurality of plate-shaped portions, and interposed portions that are arranged extending in one direction between the plurality of plate-shaped portions and form hollow spaces between the plurality of plate-shaped portions, the protector including a plurality of wall portions that covers the electric wire. The plurality of wall portions including at least one load bearing wall portion that is arranged so that the direction in which the interposed portions extend corresponds to a direction in which the load is exerted.

Abstract: An electrical component-attached wire harness is configured to be able to be assembled to a vehicle. The electrical component-attached wire harness includes a base material disposed in a vehicle, a wire harness disposed along the base material, and at least one electrical component to which an end portion of the wire harness is connected.

Abstract: A reinforcement is formed into an elongated shape, and includes a reinforcement body in which a housing part opened toward an outer peripheral side is formed and a covering part attached to close an opening of the housing part. A module component which is an electrical component or a wiring component may be housed in the reinforcement while being attached to the covering part.

Abstract: A wire module includes multiple wires and a wire protection member including a supporting plate portion with a main surface on which the multiple wires can be arranged. A partitioning portion that partitions the plurality of wires in a width direction of the supporting plate portion is formed due to the supporting plate portion being partially cut and raised. A partitioning plate portion includes a first partitioning portion and a second partitioning portion that are cut and raised from mutually opposite sides in the width direction of the supporting plate portion and come into contact with each other in directions of supporting each other in their upright states, in a state of being mutually upright.

Abstract: A protector made of a hollow plate material is externally fitted to an electric wire arranged at a position at which a load is exerted. A protector-equipped electric wire is provided with an electric wire arranged at a position at which a load is exerted, and a protector externally fitted to the electric wire. The protector is made of a folded hollow plate material, the hollow plate material including a plurality of plate-shaped portions, and interposed portions that are arranged extending in one direction between the plurality of plate-shaped portions and form hollow spaces between the plurality of plate-shaped portions, the protector including a plurality of wall portions that covers the electric wire. The plurality of wall portions including at least one load bearing wall portion that is arranged so that the direction in which the interposed portions extend corresponds to a direction in which the load is exerted.

Abstract: A wire module includes multiple wires and a wire protection member including a supporting plate portion with a main surface on which the multiple wires can be arranged. A partitioning portion that partitions the plurality of wires in a width direction of the supporting plate portion is formed due to the supporting plate portion being partially cut and raised. A partitioning plate portion includes a first partitioning portion and a second partitioning portion that are cut and raised from mutually opposite sides in the width direction of the supporting plate portion and come into contact with each other in directions of supporting each other in their upright states, in a state of being mutually upright.

Abstract: A method of manufacturing a silicon wafer, an oxygen concentration in a surface layer to be maintained more than a predetermined value while promoting a defect-free layer. Strength of the surface layer can be made higher than that of an ordinary annealed sample as a COP free zone is secured. A method of manufacturing a silicon wafer doped with nitrogen and oxygen, includes growing a single crystal silicon doped with the nitrogen by Czochralski method, slicing the grown single crystal silicon to obtain a single crystal silicon wafer; heat treating the sliced single crystal silicon wafer in an ambient gas including a hydrogen gas and/or an inert gas; polishing the heat treated single crystal silicon wafer, after the heat treatment, such that an obtained surface layer from which COP defects have been removed by the heat treatment is polished away until an outermost surface has a predetermined oxygen concentration.

Abstract: A method of manufacturing a silicon wafer, an oxygen concentration in a surface layer to be maintained more than a predetermined value while promoting a defect-free layer. Strength of the surface layer can be made higher than that of an ordinary annealed sample as a COP free zone is secured. A method of manufacturing a silicon wafer doped with nitrogen and oxygen, includes growing a single crystal silicon doped with the nitrogen by Czochralski method, slicing the grown single crystal silicon to obtain a single crystal silicon wafer; heat treating the sliced single crystal silicon wafer in an ambient gas including a hydrogen gas and/or an inert gas; polishing the heat treated single crystal silicon wafer, after the heat treatment, such that an obtained surface layer from which COP defects have been removed by the heat treatment is polished away until an outermost surface has a predetermined oxygen concentration.

Abstract: A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.

Abstract: A method of manufacturing a silicon wafer, an oxygen concentration in a surface layer to be maintained more than a predetermined value while promoting a defect-free layer. Strength of the surface layer can be made higher than that of an ordinary annealed sample as a COP free zone is secured. A method of manufacturing a silicon wafer doped with nitrogen and oxygen, includes growing a single crystal silicon doped with the nitrogen by Czochralski method, slicing the grown single crystal silicon to obtain a single crystal silicon wafer; heat treating the sliced single crystal silicon wafer in an ambient gas including a hydrogen gas and/or an inert gas; polishing the heat treated single crystal silicon wafer, after the heat treatment, such that an obtained surface layer from which COP defects have been removed by the heat treatment is polished away until an outermost surface has a predetermined oxygen concentration.

Abstract: To final polish a finish-polished surface using a final polishing solution whose chief component is a weakly basic aqueous solution that does not contain abrasive grains. During the final polishing, the weakly basic aqueous solution having an alkali concentration that reduces a haze value of a final-polished surface below the haze value of the finish-polished surface of the wafer is used as the chief component of the final polishing solution.

Abstract: A method of manufacturing a silicon wafer, an oxygen concentration in a surface layer to be maintained more than a predetermined value while promoting a defect-free layer. Strength of the surface layer can be made higher than that of an ordinary annealed sample as a COP free zone is secured. A method of manufacturing a silicon wafer doped with nitrogen and oxygen, includes growing a single crystal silicon doped with the nitrogen by Czochralski method, slicing the grown single crystal silicon to obtain a single crystal silicon wafer; heat treating the sliced single crystal silicon wafer in an ambient gas including a hydrogen gas and/or an inert gas; polishing the heat treated single crystal silicon wafer, after the heat treatment, such that an obtained surface layer from which COP defects have been removed by the heat treatment is polished away until an outermost surface has a predetermined oxygen concentration.

Abstract: A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.

Abstract: A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.

Abstract: A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.

Abstract: A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.