Patents by Inventor Shinya Sakurai

Shinya Sakurai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240387103
    Abstract: A method of manufacturing a coil includes: a planar coil forming step of winding a conductor wire in a plurality of layers (or a plurality of rows and a plurality of layers) to form an air-core planar coil; a first heating step of heating the planar coil formed in the planar coil forming step to a predetermined temperature; a bending step of bending at least a part of the planar coil heated in the first heating step at a predetermined angle in a direction vertical to a plane of the planar coil; and a second heating step of heating a bent coil formed in the bending step at a predetermined temperature for a predetermined time.
    Type: Application
    Filed: June 17, 2022
    Publication date: November 21, 2024
    Inventors: Nobutomo KOBAYASHI, Shinya SAKURAI
  • Patent number: 12144403
    Abstract: A fastener tape includes a first side-edge portion including a core cord and a plurality of first ground warp yarns; and a tape main portion adjacently positioned to the first side-edge portion and including a plurality of second ground warp yarns. A weft yarn and every ground warp yarn of the fastener tape are yarns including plant-derived resin. The first ground warp yarn is FDY (Fully Drawn Yarn) and the second ground warp yarn is DTY (Drawn Textured Yarn) and in accordance with this difference in yarn type, a thermal shrinkage ratio of the first ground warp yarn is greater than a thermal shrinkage ratio of the second ground warp yarn.
    Type: Grant
    Filed: November 2, 2020
    Date of Patent: November 19, 2024
    Assignee: YKK Corporation
    Inventors: Hiroki Higashitani, Mitsuo Tsuzuyama, Yuichi Miyazaki, Shinya Sakurai
  • Patent number: 11945096
    Abstract: A product conveyance robot includes: a travel portion configured to travel on a road surface; a holding portion provided above the travel portion and configured to hold a product, the holding portion being provided rotatably around a lateral turn axis extending in the height direction of the holding portion; and a controller configured to control driving of the travel portion and a rotation angle of the holding portion around the lateral turn axis.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: April 2, 2024
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Zixun Mei, Satoshi Okamoto, Takuya Watabe, Shinya Sakurai
  • Publication number: 20230380552
    Abstract: A fastener tape includes a first side-edge portion including a core cord and a plurality of first ground warp yarns; and a tape main portion adjacently positioned to the first side-edge portion and including a plurality of second ground warp yarns. A weft yarn and every ground warp yarn of the fastener tape are yarns including plant-derived resin. The first ground warp yarn is FDY (Fully Drawn Yarn) and the second ground warp yarn is DTY (Drawn Textured Yarn) and in accordance with this difference in yarn type, a thermal shrinkage ratio of the first ground warp yarn is greater than a thermal shrinkage ratio of the second ground warp yarn.
    Type: Application
    Filed: November 2, 2020
    Publication date: November 30, 2023
    Inventors: Hiroki HIGASHITANI, Mitsuo TSUZUYAMA, Yuichi MIYAZAKI, Shinya SAKURAI
  • Patent number: 11114571
    Abstract: A semiconductor device includes: a semiconductor substrate having a diode formation region; an upper diffusion region of a first conductivity type provided on a surface layer of a main surface of the semiconductor substrate in the diode formation region; and a lower diffusion region of a second conductivity type provided at a position deeper than the upper diffusion region with respect to the main surface in a depth direction of the semiconductor substrate, the lower diffusion region having a higher impurity concentration as compared to the semiconductor substrate. The lower diffusion region provides a PN joint surface with the upper diffusion region at a position deeper than the main surface, and has a maximum point indicating a maximum concentration in an impurity concentration profile of the lower diffusion region in the diode formation region.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: September 7, 2021
    Assignee: DENSO CORPORATION
    Inventors: Shinichirou Yanagi, Yusuke Nonaka, Seiji Noma, Shinya Sakurai, Shogo Ikeura, Atsushi Kasahara, Shin Takizawa
  • Publication number: 20210114226
    Abstract: A product conveyance robot includes: a travel portion configured to travel on a road surface; a holding portion provided above the travel portion and configured to hold a product, the holding portion being provided rotatably around a lateral turn axis extending in the height direction of the holding portion; and a controller configured to control driving of the travel portion and a rotation angle of the holding portion around the lateral turn axis.
    Type: Application
    Filed: October 14, 2020
    Publication date: April 22, 2021
    Inventors: Zixun Mei, Satoshi Okamoto, Takuya Watabe, Shinya Sakurai
  • Patent number: 10786337
    Abstract: Provided is an interdental cleaning tool which has a simple configuration and can effectively prevent an occurrence of breakage of a core base portion when inserting the interdental cleaning tool into an interdental space or during interdental cleaning without reducing productivity of the interdental cleaning tool, and provided is a method for manufacturing the interdental cleaning tool.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: September 29, 2020
    Assignee: SUNSTAR SUISSE S.A.
    Inventors: Keisuke Kato, Makiko Yamane, Shinya Sakurai
  • Patent number: 10779918
    Abstract: Provided is an interdental cleaning tool which has a simple configuration and can effectively prevent an occurrence of breakage of a core base portion when inserting the interdental cleaning tool into an interdental space or during interdental cleaning without reducing productivity of the interdental cleaning tool.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: September 22, 2020
    Assignee: SUNSTAR SUISSE S.A.
    Inventors: Keisuke Kato, Makiko Yamane, Shinya Sakurai
  • Patent number: 10779919
    Abstract: Provided is an interdental cleaning tool which has a simple configuration and can effectively prevent an occurrence of breakage of a core base portion when inserting the interdental cleaning tool into an interdental space or during interdental cleaning without reducing the productivity of the interdental cleaning tool, and provided is a method for manufacturing the interdental cleaning tool. A plurality of cleaning portion recesses (14) which penetrate a cleaning soft portion (21) and form recesses (14a) in a core base portion (12) are formed on each of a first side portion and a second side portion of a cleaning portion (2) at an interval in an axial direction of a cleaning soft portion (21), and at least one of the plurality of cleaning portion recesses (14) is formed so that an opening of the core base portion recess formed in the core base portion has a shape elongated in the axial direction of the cleaning portion.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: September 22, 2020
    Assignee: SUNSTAR SUISSE S.A.
    Inventors: Keisuke Kato, Makiko Yamane, Shinya Sakurai
  • Patent number: 10777545
    Abstract: A semiconductor device configures a protection element that protects a protection target element connected between a cathode electrode and an anode electrode when a parasitic transistor configured by a cathode region, a first conductivity type well layer, and a second conductivity type well is turned on and electrical continuity is established between the cathode electrode and the anode electrode. The semiconductor device includes a plurality of body regions in one cell of the protection element, and the plurality of body regions is brought in contact with the cathode electrode.
    Type: Grant
    Filed: April 8, 2019
    Date of Patent: September 15, 2020
    Assignee: DENSO CORPORATION
    Inventors: Akira Yamada, Shinya Sakurai, Takashi Nakano, Yosuke Kondo, Mutsuya Motojima
  • Patent number: 10615079
    Abstract: A buried n-type region is provided in a surface layer portion of an n-type body layer of a Pch MOSFET. This makes it possible to lower the threshold voltage Vt. In a portion of the n-type body layer other than the buried n-type region, since an n-type impurity concentration can be kept relatively high, the threshold voltage Vt can be lowered while securing an on-breakdown voltage. Furthermore, since an accumulation region is configured by an n-type active layer, a partial high concentration portion is not formed in a p-type drift layer. Therefore, as in the case where the partial high concentration portion is generated in the p-type drift layer, a reduction in a breakdown voltage caused by an electric field concentration can be restricted from occurring with a distribution in which equipotential lines are concentrated.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: April 7, 2020
    Assignee: DENSO CORPORATION
    Inventors: Shogo Ikeura, Yusuke Nonaka, Shinichirou Yanagi, Seiji Noma, Shinya Sakurai
  • Publication number: 20190279906
    Abstract: A buried n-type region is provided in a surface layer portion of an n-type body layer of a Pch MOSFET. This makes it possible to lower the threshold voltage Vt. In a portion of the n-type body layer other than the buried n-type region, since an n-type impurity concentration can be kept relatively high, the threshold voltage Vt can be lowered while securing an on-breakdown voltage. Furthermore, since an accumulation region is configured by an n-type active layer, a partial high concentration portion is not formed in a p-type drift layer. Therefore, as in the case where the partial high concentration portion is generated in the p-type drift layer, a reduction in a breakdown voltage caused by an electric field concentration can be restricted from occurring with a distribution in which equipotential lines are concentrated.
    Type: Application
    Filed: March 13, 2017
    Publication date: September 12, 2019
    Inventors: Shogo IKEURA, Yusuke NONAKA, Shinichirou YANAGI, Seiji NOMA, Shinya SAKURAI
  • Publication number: 20190274799
    Abstract: Provided is an interdental cleaning tool which has a simple configuration and can effectively prevent an occurrence of breakage of a core base portion when inserting the interdental cleaning tool into an interdental space or during interdental cleaning without reducing productivity of the interdental cleaning tool, and provided is a method for manufacturing the interdental cleaning tool.
    Type: Application
    Filed: December 7, 2017
    Publication date: September 12, 2019
    Applicant: SUNSTAR SUISSE SA
    Inventors: Keisuke KATO, Makiko YAMANE, Shinya SAKURAI
  • Publication number: 20190237457
    Abstract: A semiconductor device configures a protection element that protects a protection target element connected between a cathode electrode and an anode electrode when a parasitic transistor configured by a cathode region, a first conductivity type well layer, and a second conductivity type well is turned on and electrical continuity is established between the cathode electrode and the anode electrode. The semiconductor device includes a plurality of body regions in one cell of the protection element, and the plurality of body regions is brought in contact with the cathode electrode.
    Type: Application
    Filed: April 8, 2019
    Publication date: August 1, 2019
    Inventors: Akira YAMADA, Shinya SAKURAI, Takashi NAKANO, Yosuke KONDO, Mutsuya MOTOJIMA
  • Publication number: 20190229219
    Abstract: A semiconductor device includes: a semiconductor substrate having a diode formation region; an upper diffusion region of a first conductivity type provided on a surface layer of a main surface of the semiconductor substrate in the diode formation region; and a lower diffusion region of a second conductivity type provided at a position deeper than the upper diffusion region with respect to the main surface in a depth direction of the semiconductor substrate, the lower diffusion region having a higher impurity concentration as compared to the semiconductor substrate. The lower diffusion region provides a PN joint surface with the upper diffusion region at a position deeper than the main surface, and has a maximum point indicating a maximum concentration in an impurity concentration profile of the lower diffusion region in the diode formation region.
    Type: Application
    Filed: March 28, 2019
    Publication date: July 25, 2019
    Inventors: Shinichirou YANAGI, Yusuke NONAKA, Seiji NOMA, Shinya SAKURAI, Shogo IKEURA, Atsushi KASAHARA, Shin TAKIZAWA
  • Publication number: 20190133729
    Abstract: Provided is an interdental cleaning tool which has a simple configuration and can effectively prevent an occurrence of breakage of a core base portion when inserting the interdental cleaning tool into an interdental space or during interdental cleaning without reducing productivity of the interdental cleaning tool.
    Type: Application
    Filed: June 8, 2016
    Publication date: May 9, 2019
    Applicant: SUNSTAR SUISSE SA
    Inventors: Keisuke KATO, Makiko YAMANE, Shinya SAKURAI
  • Publication number: 20190060037
    Abstract: Provided is an interdental cleaning tool which has a simple configuration and can effectively prevent an occurrence of breakage of a core base portion when inserting the interdental cleaning tool into an interdental space or during interdental cleaning without reducing productivity of the interdental cleaning tool, and provided is a method for manufacturing the interdental cleaning tool.
    Type: Application
    Filed: June 8, 2016
    Publication date: February 28, 2019
    Applicant: SUNSTAR SUISSE SA
    Inventors: Keisuke KATO, Makiko YAMANE, Shinya SAKURAI
  • Publication number: 20180168783
    Abstract: Provided is an interdental cleaning tool which has a simple configuration and can effectively prevent an occurrence of breakage of a core base portion when inserting the interdental cleaning tool into an interdental space or during interdental cleaning without reducing the productivity of the interdental cleaning tool, and provided is a method for manufacturing the interdental cleaning tool. A plurality of cleaning portion recesses (14) which penetrate a cleaning soft portion (21) and form recesses (14a) in a core base portion (12) are formed on each of a first side portion and a second side portion of a cleaning portion (2) at an interval in an axial direction of a cleaning soft portion (21), and at least one of the plurality of cleaning portion recesses (14) is formed so that an opening of the core base portion recess formed in the core base portion has a shape elongated in the axial direction of the cleaning portion.
    Type: Application
    Filed: June 8, 2015
    Publication date: June 21, 2018
    Applicant: SUNSTAR SUISSE SA
    Inventors: Keisuke KATO, Makiko YAMANE, Shinya SAKURAI
  • Patent number: 8918944
    Abstract: Provided is an interdental brush having a wire and filaments arranged therein by folding the wire and disposing the filaments between the wire and then twisting the wire. The interdental brush has improved filament retention and improved cleaning effectivity and reachability to minute portions. Each of filaments 3 has a polygonal cross section whose at least one corner portion has an interior angle 31 as acute as 30 to 75 degrees. Specifically, an angle ?3 of the acute corner portion 31 is set at 1.2 to 3 times a twisting angle ?4 of the wire. The filaments each have two or more such acute corner portions, and two or more rows of such filaments are disposed and laminated between the wire in a densely arranged manner.
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: December 30, 2014
    Assignee: Sunstar Inc.
    Inventors: Keisuke Kato, Shinya Sakurai
  • Patent number: 8476673
    Abstract: A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface.
    Type: Grant
    Filed: November 15, 2011
    Date of Patent: July 2, 2013
    Assignee: DENSO CORPORATION
    Inventors: Norihito Tokura, Satoshi Shiraki, Shigeki Takahashi, Shinya Sakurai, Takashi Suzuki