Abstract: The present disclosure relates to a signal processing apparatus capable of reducing a circuit scale when transmitting and receiving a signal from an antenna. A first n-type MOS transistor amplifies a transmission signal to be transmitted from the antenna. A second n-type MOS transistor supplies a reception signal to be received from the antenna to a reception circuit. The first n-type MOS transistor and the second n-type MOS transistor are connected to the antenna in series. Furthermore, the reception circuit is connected to a contact between the first n-type MOS transistor and the second n-type MOS transistor. The present disclosure is capable of being applied to, for example, a radio transceiver.

Abstract: The present disclosure relates to a signal processing apparatus capable of reducing a circuit scale when transmitting and receiving a signal from an antenna. A first n-type MOS transistor amplifies a transmission signal to be transmitted from the antenna. A second n-type MOS transistor supplies a reception signal to be received from the antenna to a reception circuit. The first n-type MOS transistor and the second n-type MOS transistor are connected to the antenna in series. Furthermore, the reception circuit is connected to a contact between the first n-type MOS transistor and the second n-type MOS transistor. The present disclosure is capable of being applied to, for example, a radio transceiver.

Abstract: A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the ?-crystal structure.

Abstract: A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the ?-crystal structure.

Abstract: A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the &bgr;-crystal structure.

Abstract: A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the &bgr;-crystal structure.

Abstract: A producing method of the present invention includes (i) forming a wiring line above a semiconductor substrate, (ii) forming an insulating layer above the semiconductor substrate and the wiring line, (iii) forming an opening penetrating the insulating layer in the insulating layer with respect to a portion above the wiring line, (iv) forming a barrier layer whose surface is formed of a material A, so as to cover a surface of the insulating layer and an inner surface of the opening, (v) forming a metal layer made of a first metal on the barrier layer, and (vi) depositing a second metal inside the opening by a plating, thus forming a via plug containing the second metal. A rest potential PA of the material A with respect to the second metal is larger than a rest potential PM of the first metal with respect to the second metal.