Abstract: According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0<x1?1), a second nitride region including Alx2Ga1-x2N (0<x2<1, x2<x1), and a third nitride region. The second nitride region is between the first nitride region and the third nitride region. The third nitride region includes Al, Ga, and N. The third nitride region does not include carbon, alternatively a third carbon concentration in the third nitride region is lower than a second carbon concentration in the second nitride region.

Abstract: According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0<x1?1), a second nitride region including Alx2Ga1-x2N (0<x2<1, x2<x1), and a third nitride region. The second nitride region is between the first nitride region and the third nitride region. The third nitride region includes Al, Ga, and N. The third nitride region does not include carbon, alternately a third carbon concentration in the third nitride region is lower than a second carbon concentration in the second nitride region.

Abstract: A gate drive circuit (201) includes: a PNP transistor (Q1) having an emitter connected to a gate of a driven transistor (Q) and a collector connected to a ground application terminal; a capacitor (C1) having a first end connected to a base of the PNP transistor and a second end connected to the ground application terminal; a base-emitter resistor (R1) having a first end connected to the emitter of the PNP transistor and a second end connected to the base of the PNP transistor; an electric charge supplying portion (201A); an electric charge extracting portion (201B); a charging portion (201C); and a discharging portion (201D).

Abstract: An inductor component includes an element assembly having a first surface and a second surface located opposite to the first surface, a first direction-distinguishing layer disposed on the first surface, and a second direction-distinguishing layer disposed on the second surface. The first direction-distinguishing layer has a first cavity passing through in the thickness direction. The second direction-distinguishing layer has a second cavity passing through in the thickness direction. The element assembly has a first exposed portion that is part of the element assembly and that is exposed in the first cavity and has a second exposed portion that is part of the element assembly and that is exposed in the second cavity. The first amount of protrusion of the first exposed portion protruding in the thickness direction is less than the second amount of protrusion of the second exposed portion protruding in the thickness direction.

Abstract: For example, a switch driving circuit 1 includes a signal source SG that pulse-drives a gate signal G for a switching element SW (e.g., IGBT) connected in series with a load RL (e.g., resistive load), a gate resistor Rg connected between the signal source SG and the switching element SW, a gate capacitor Cge of which the first terminal is connected to the gate of the switching element SW, a dumping resistor Rd connected between the second terminal of the gate capacitor Cge and the emitter of the switching element SW. The resistance value of the dumping resistor Rd can be set to be equal to, for example, 1/100 to 1/1000 of the resistance value of the gate resistor Rg. For example, the turning-on transition period ?on and the turning-off transition period ?off of the switching element SW can each be 80 ?s to 1 s (about 120 ?s).

Abstract: An inductor component includes an element assembly having a first surface and a second surface located opposite to the first surface, a first direction-distinguishing layer disposed on the first surface, and a second direction-distinguishing layer disposed on the second surface. The first direction-distinguishing layer has a first cavity passing through in the thickness direction. The second direction-distinguishing layer has a second cavity passing through in the thickness direction. The element assembly has a first exposed portion that is part of the element assembly and that is exposed in the first cavity and has a second exposed portion that is part of the element assembly and that is exposed in the second cavity. The first amount of protrusion of the first exposed portion protruding in the thickness direction is less than the second amount of protrusion of the second exposed portion protruding in the thickness direction.

Abstract: An inductor component includes an element body, a coil provided in the element body, and an outer electrode provided to the element body and electrically connected to the coil. The outer electrode includes an underlying layer embedded in the element body in which part of the underlying layer protrudes from a surface of the element body, and a coating film that covers a portion of the underlying layer exposed at the element body.

Abstract: An inductor component includes an element body, a coil provided in the element body, and an outer electrode provided at the element body and electrically connected to the coil. The element body includes a bottom surface that faces the mounting substrate when the element body is mounted, the outer electrode includes an underlying layer and a coating film that covers the underlying layer. At the bottom surface of the element body, the underlying layer is embedded in the element body and does not protrude from the element body, and at least part of the coating film is embedded in the element body.