Abstract: A manufacturing method of an electronic device processes a surface of a first wafer, bonds a surface of a second wafer to the processed surface of the first wafer, thins the first wafer by polishing a back surface of the first wafer, the back surface being located on an opposite side of the processed surface, forms a groove along a periphery of the back surface of the thinned first wafer by using a dicing blade, attaches a protective layer to the back surface of the first wafer having the groove, via a bonding layer, and polishes a back surface of the second wafer, the back surface being located on an opposite side of the surface attached to the protective layer.

Abstract: A manufacturing method of an electronic device processes a surface of a first wafer, bonds a surface of a second wafer to the processed surface of the first wafer, thins the first wafer by polishing a back surface of the first wafer, the back surface being located on an opposite side of the processed surface, forms a groove along a periphery of the back surface of the thinned first wafer by using a dicing blade, attaches a protective layer to the back surface of the first wafer having the groove, via a bonding layer, and polishes a back surface of the second wafer, the back surface being located on an opposite side of the surface attached to the protective layer.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.

Abstract: According to one embodiment, a substrate processing method is disclosed. The above method includes: grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove; grinding a projecting portion on an inner side of the groove with a second grindstone to thereby form a recessed portion integrally with the groove on the back surface of the semiconductor wafer; and grinding a bottom surface of the recessed portion including a ground surface made by the second grindstone with a third grindstone.

Abstract: According to one embodiment, there is disclosed a method of manufacturing a semiconductor device forming a release layer on a region excluding a peripheral edge portion of a surface of a first substrate, bonding a second substrate to at least a region including the release layer of the surface of the first substrate via an adhesive layer, removing physically a peripheral edge portion of the second substrate in a manner that at least a surface of the adhesive layer right under the peripheral edge portion of the second substrate is exposed, the adhesive layer is caused to remain between the peripheral edge portion of the first substrate and the second substrate, and adhesion between the first and second substrates is maintained, and then dissolving the adhesive layer.

Abstract: According to one embodiment, there is disclosed a method of manufacturing a semiconductor device forming a release layer on a region excluding a peripheral edge portion of a surface of a first substrate, bonding a second substrate to at least a region including the release layer of the surface of the first substrate via an adhesive layer, removing physically a peripheral edge portion of the second substrate in a manner that at least a surface of the adhesive layer right under the peripheral edge portion of the second substrate is exposed, the adhesive layer is caused to remain between the peripheral edge portion of the first substrate and the second substrate, and adhesion between the first and second substrates is maintained, and then dissolving the adhesive layer.

Abstract: According to one embodiment, a substrate processing method is disclosed. The above method includes: grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove; grinding a projecting portion on an inner side of the groove with a second grindstone to thereby form a recessed portion integrally with the groove on the back surface of the semiconductor wafer; and grinding a bottom surface of the recessed portion including a ground surface made by the second grindstone with a third grindstone.

Abstract: According to one embodiment, a substrate processing method will be disclosed. The method includes attaching a substrate to be processed onto a supporting substrate via an adhesive layer, removing an outer peripheral edge portion of the substrate to be processed together with the adhesive sticking to the outer peripheral edge portion, and grinding a surface of a side opposite to the supporting substrate of the substrate to be processed whose outer peripheral edge portion is removed.

Abstract: The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive sheet contains a metal impurity ion trapping agent.

Abstract: According to one embodiment, a semiconductor device manufacturing method is disclosed. The method comprises (a) forming cut grooves in a front surface of a semiconductor wafer on which semiconductor elements are formed to partition the front surface into a plurality of regions, (b) disposing partly a resin in the cut grooves, (c) adhering a protection tape on the front surface of the semiconductor wafer, (d) thinning the semiconductor wafer by grinding a rear surface of the semiconductor wafer to reach the cut grooves, (e) forming an adhesive agent layer on the rear surface of the semiconductor wafer, and (f) dividing the semiconductor wafer into a plurality of semiconductor chips by cutting the adhesive agent layer together with the disposed resin along the cut grooves.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.

Abstract: A method for manufacturing a stacked semiconductor package where a plurality of semiconductor chips are stacked on a substrate, including: forming insulating layers at portions of a wafer corresponding to sides of the plurality of semiconductor chips when the plurality of semiconductor chips are in the wafer; processing the wafer so as to obtain the plurality of semiconductor chips; subsequently stacking the plurality of semiconductor chips on the substrate such that the insulating layers formed at the sides of the plurality of semiconductor chips are respectively positioned at the same side as one another; and forming a wiring over the insulating layers formed at the sides of the plurality of semiconductor chips so that the plurality of semiconductor chips are electrically connected with one another and one or more of the plurality of semiconductor chips are electrically connected with the substrate.

Abstract: A method for manufacturing a stacked semiconductor package where a plurality of semiconductor chips are stacked on a substrate, including: forming insulating layers at portions of a wafer corresponding to sides of the plurality of semiconductor chips when the plurality of semiconductor chips are in the wafer; processing the wafer so as to obtain the plurality of semiconductor chips; subsequently stacking the plurality of semiconductor chips on the substrate such that the insulating layers formed at the sides of the plurality of semiconductor chips are respectively positioned at the same side as one another; and forming a wiring over the insulating layers formed at the sides of the plurality of semiconductor chips so that the plurality of semiconductor chips are electrically connected with one another and one or more of the plurality of semiconductor chips are electrically connected with the substrate.

Abstract: The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive sheet contains a metal impurity ion trapping agent.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device includes forming a plurality of first trenches in a semiconductor substrate, forming an insulating member in the first trenches, removing a part of a portion of the insulating member, forming second trenches in the insulating member, and attaching a protection film. The semiconductor substrate has a first and a second main surface. The insulating member has an upper face located higher than the first main surface. The portion is located higher than the first main surface.

Abstract: A semiconductor chip having an adhesive layer previously formed on an element forming surface thereof and having a bump exposed from the surface of the adhesive layer is wire-bonded to a printed circuit board. Another semiconductor chip is stacked on the above semiconductor chip with the adhesive layer disposed therebetween and is wire-bonded to the printed circuit board by wire bonding. Likewise, at least one semiconductor chip is sequentially stacked on the thus attained semiconductor structure to form a stack MCP.

Abstract: An adhesive tape peeling mechanism has an adhering section and a porous member. The adhering section adheres to a segmented semiconductor wafer bonded to adhesive tape. The porous member is provided on the surface adhering to the semiconductor wafer of the adhering section. The porous member is divided into at least two adhering areas in the direction in which the adhesive tape is peeled. The porous member adheres to the semiconductor wafer by suction and fixes the wafer in place.

Abstract: A semiconductor chip having an adhesive layer previously formed on an element forming surface thereof and having a bump exposed from the surface of the adhesive layer is wire-bonded to a printed circuit board. Another semiconductor chip is stacked on the above semiconductor chip with the adhesive layer disposed therebetween and is wire-bonded to the printed circuit board by wire bonding. Likewise, at least one semiconductor chip is sequentially stacked on the thus attained semiconductor structure to form a stack MCP.

Abstract: A method for manufacturing a stacked semiconductor package where a plurality of semiconductor chips are stacked on a substrate, including: forming insulating layers at portions of a wafer corresponding to sides of the plurality of semiconductor chips when the plurality of semiconductor chips are in the wafer; processing the wafer so as to obtain the plurality of semiconductor chips; subsequently stacking the plurality of semiconductor chips on the substrate such that the insulating layers formed at the sides of the plurality of semiconductor chips are respectively positioned at the same side as one another; and forming a wiring over the insulating layers formed at the sides of the plurality of semiconductor chips so that the plurality of semiconductor chips are electrically connected with one another and one or more of the plurality of semiconductor chips are electrically connected with the substrate.

Abstract: A semiconductor chip having an adhesive layer previously formed on an element forming surface thereof and having a bump exposed from the surface of the adhesive layer is wire-bonded to a printed circuit board. Another semiconductor chip is stacked on the above semiconductor chip with the adhesive layer disposed therebetween and is wire-bonded to the printed circuit board by wire bonding. Likewise, at least one semiconductor chip is sequentially stacked on the thus attained semiconductor structure to form a stack MCP.