Abstract: The vibration strength of a linear feeder is changeable depending on whether an article is currently present at a downstream end of a trough of the linear feeder. When articles continue to be vibrationally transported, arriving continuously at the downstream end of the trough of the linear feeder, the vibration strength is set to a vibration strength suitable for discharge of the articles from the downstream end. When there is currently no article at the downstream end of the trough of the linear feeder, the vibration strength is set to a vibration strength suitable for transport of the articles to allow the articles that follow to swiftly arrive at the downstream end of the trough.

Abstract: When there is currently no article at an upstream end of a trough of a downstream linear feeder, an upstream linear feeder is driven to operate until any article detected by an upstream article detector. In case no article is still detectable by the upstream article sensor when a predetermined period of time is passed after the upstream linear feeder starts to be driven, the upstream linear feeder is driven to operate by an increased vibration strength based on the assumption that an article(s) is being jammed or articles are being stuck together on an upstream side of the upstream linear feeder.

Abstract: The vibration strength of a linear feeder is changeable depending on whether an article is currently present at a downstream end of a trough of the linear feeder. When articles continue to be vibrationally transported, arriving continuously at the downstream end of the trough of the linear feeder, the vibration strength is set to a vibration strength suitable for discharge of the articles from the downstream end. When there is currently no article at the downstream end of the trough of the linear feeder, the vibration strength is set to a vibration strength suitable for transport of the articles to allow the articles that follow to swiftly arrive at the downstream end of the trough.

Abstract: When there is currently no article at an upstream end of a trough of a downstream linear feeder, an upstream linear feeder is driven to operate until any article detected by an upstream article detector. In case no article is still detectable by the upstream article sensor when a predetermined period of time is passed after the upstream linear feeder starts to be driven, the upstream linear feeder is driven to operate by an increased vibration strength based on the assumption that an article(s) is being jammed or articles are being stuck together on an upstream side of the upstream linear feeder.

Abstract: In a reset period of a first stage, a switching circuit is turned on, and high-level driving voltages are output from driving circuits. In a charge transfer period subsequent to the reset period, the switching circuit is turned off, and low-level driving voltages are output from the driving circuits. It is determined whether or not an output voltage of an amplifier circuit in the charge transfer period is included in a normal range. In the inspection of a second stage subsequent to the first stage, in the same manner as in the normal measurement, voltages having opposite phases are output from the driving circuits in the reset period and the charge transfer period, and it is determined whether or not the output voltage of the amplifier circuit in the charge transfer period is included in a normal range.

Abstract: A humidity detection sensor includes a lower electrode provided on a board, an upper electrode provided so as to face the lower electrode, a humidity sensing film which is formed at least between the lower electrode and the upper electrode and whose dielectric constant changes in response to humidity, and a protective film provided so as to cover the upper electrode. Each of the upper electrode and the protective film has an opening through which the humidity sensing film is partially exposed to the outside. In the opening, the humidity sensing film is provided so as to reach at least a position higher than the position of the lower surface of the protective film.

Abstract: In a reset period of a first stage, a switching circuit is turned on, and high-level driving voltages are output from driving circuits. In a charge transfer period subsequent to the reset period, the switching circuit is turned off, and low-level driving voltages are output from the driving circuits. It is determined whether or not an output voltage of an amplifier circuit in the charge transfer period is included in a normal range. In the inspection of a second stage subsequent to the first stage, in the same manner as in the normal measurement, voltages having opposite phases are output from the driving circuits in the reset period and the charge transfer period, and it is determined whether or not the output voltage of the amplifier circuit in the charge transfer period is included in a normal range.

Abstract: There is provided a semiconductor pressure sensor which improves the sensor sensitivity and is excellent in the withstand pressure characteristic and the temperature characteristic. In the semiconductor pressure sensor in which a diaphragm is formed by a cavity provided on one of top and bottom surfaces of a silicon substrate and a plurality of piezoresistors is disposed in the diaphragm edge, a recess which has a larger area than the planar shape of the diaphragm and whose entire edge is located outward from the diaphragm edge in plan view is provided in a protective film which covers the entire surface of the silicon substrate on the diaphragm side. The protective film located on the diaphragm is preferably formed of SiO2.

Abstract: A piezoresistive pressure sensor is provided, which can prevent the occurrence of ESD breakdown due to the nearness of interconnection layers of a resistive element according to miniaturization thereof. The piezoresistive pressure sensor is so configured that respective semiconductor resistive layers on both sides of an arrangement are formed to be relatively longer than an adjacent semiconductor resistive layer, and thus a corner portion of a semiconductor connection layer that extends from the respective semiconductor resistive layers on both sides of the arrangement and a corner portion of the semiconductor interconnection layer that is nearest to the corner portion of the semiconductor connection layer, between which the ESD breakdown occurs easily, can be separated from each other.

Abstract: A humidity sensor package includes: a humidity sensor that is mounted on a main surface of a package substrate and that have a humidity-sensing area; a control IC that is mounted on the main surface of the package substrate; a sealing resin that seals at least an external connection portion of the humidity sensor; and a partition member that partitions a sealing area of the sealing resin and the humidity-sensing area from each other so as to expose the humidity-sensing area to an external environment. Here, a first distance in the thickness direction from the package substrate to the top surface of the partition member is smaller than a second distance in the thickness direction from the package substrate to the top surface of the sealing resin.

Abstract: A piezoresistive pressure sensor is provided, which can prevent the occurrence of ESD breakdown due to the nearness of interconnection layers of a resistive element according to miniaturization thereof. The piezoresistive pressure sensor is so configured that respective semiconductor resistive layers on both sides of an arrangement are formed to be relatively longer than an adjacent semiconductor resistive layer, and thus a corner portion of a semiconductor connection layer that extends from the respective semiconductor resistive layers on both sides of the arrangement and a corner portion of the semiconductor interconnection layer that is nearest to the corner portion of the semiconductor connection layer, between which the ESD breakdown occurs easily, can be separated from each other.

Abstract: There is provided a semiconductor pressure sensor which improves the sensor sensitivity and is excellent in the withstand pressure characteristic and the temperature characteristic. In the semiconductor pressure sensor in which a diaphragm is formed by a cavity provided on one of top and bottom surfaces of a silicon substrate and a plurality of piezoresistors is disposed in the diaphragm edge, a recess which has a larger area than the planar shape of the diaphragm and whose entire edge is located outward from the diaphragm edge in plan view is provided in a protective film which covers the entire surface of the silicon substrate on the diaphragm side. The protective film located on the diaphragm is preferably formed of SiO2.

Abstract: A thermal head having electrode wiring lines in a narrow wiring region, in which a line and a space are narrow, with good pattern accuracy and a method of manufacturing the same are provided. A thermal head includes: a plurality of heating resistors arranged in a line at predetermined pitches there between on a protruding level difference part of a glazed substrate; bent wiring lines each of which serves to electrically connect a pair of adjacent heating resistors to each other; a common wiring line and individual wiring lines used to cause the pair of adjacent heating resistors to be electrically conducted through each of the bent wiring lines; and bonding pads formed on one ends of the individual wiring lines. The common wiring line has a narrow wiring region located between the bonding pads arranged in a line and a wide wiring region wider than the narrow wiring region.

Abstract: A method for manufacturing a thermal head is provided which includes the steps of forming a resistor layer and an insulating barrier layer, patterning the above two layers to form aligned heating resistors, forming a solid electrode layer over the heating resistors and the like, and partly removing the solid electrode layer to form opening portions and electrode layers for supplying electricity to the heating resistors. In the patterning step, part of the resistor layer and part of the insulating barrier layer, which are outside a heat generating area, are simultaneously removed to form the heating resistors having a planar U shape composed of a pair of effective heating portions and a connection portion connecting the above pair, the effective heating portions and the connection portion each having a predetermined length and width. The length of the connection portion is set to 5 ?m or less.

Abstract: A thermal head having electrode wiring lines in a narrow wiring region, in which a line and a space are narrow, with good pattern accuracy and a method of manufacturing the same are provided. A thermal head includes: a plurality of heating resistors arranged in a line at predetermined pitches there between on a protruding level difference part of a glazed substrate; bent wiring lines each of which serves to electrically connect a pair of adjacent heating resistors to each other; a common wiring line and individual wiring lines used to cause the pair of adjacent heating resistors to be electrically conducted through each of the bent wiring lines; and bonding pads formed on one ends of the individual wiring lines. The common wiring line has a narrow wiring region located between the bonding pads arranged in a line and a wide wiring region wider than the narrow wiring region.

Abstract: A thermal head includes a large number of heating resistors disposed at a regular interval, individual conductors individually connected to each of the heating resistors, and common conductors connected to each of the heating resistors in common, the individual conductors and the common conductors serving as conductors for supplying the heating resistors with a current. In the thermal head, an underlayer having a large number of irregularities is provided and a conductor layer is provided on the underlayer along the irregularities. Thereby, bonding pads that are composed of the conductor layer and that have irregularities are provided as electrodes of the individual conductors or the common conductors.

Abstract: A method for manufacturing a thermal head is provided which includes the steps of forming a resistor layer and an insulating barrier layer, patterning the above two layers to form aligned heating resistors, forming a solid electrode layer over the heating resistors and the like, and partly removing the solid electrode layer to form opening portions and electrode layers for supplying electricity to the heating resistors. In the patterning step, part of the resistor layer and part of the insulating barrier layer, which are outside a heat generating area, are simultaneously removed to form the heating resistors having a planar U shape composed of a pair of effective heating portions and a connection portion connecting the above pair, the effective heating portions and the connection portion each having a predetermined length and width. The length of the connection portion is set to 5 ?m or less.

Abstract: A thermal head includes a large number of heating resistors disposed at a regular interval, individual conductors individually connected to each of the heating resistors, and common conductors connected to each of the heating resistors in common, the individual conductors and the common conductors serving as conductors for supplying the heating resistors with a current. In the thermal head, an underlayer having a large number of irregularities is provided and a conductor layer is provided on the underlayer along the irregularities. Thereby, bonding pads that are composed of the conductor layer and that have irregularities are provided as electrodes of the individual conductors or the common conductors.

Abstract: Garbage resulting from the preparation, cooking and dispensing of food and containing water-insoluble organic components is treated first heated in the presence of water at a temperature of 100.degree.-400.degree. C. and a pressure higher than the saturated water vapor pressure to convert at least part of the water-insoluble components into water-soluble organic components and to obtain a mixture containing the water-soluble components dissolved in the water. The mixture is then subjected to methane fermentation to convert the water-soluble organic components into methane.

Abstract: An organic material-containing sludge is fluidized and is heat-treated at a high pressure in a reactor disposed underground to obtain an oil having a high calorific value. The heat treatment may be performed using an electrical energy, the terrestrial heat or a reaction heat obtained by oxidative treatment of similer sludge.