Abstract: Provided is a spot welding method by which welding can be performed successfully while inhibiting occurrence of expulsion. First to third metal plates W1 to W3 were welded in which a ratio of a total thickness to a thickness of the first metal plate W1 is 7. In Example 1, a peak current value A1 is 14.6 kA, an effective current value A2 is 7.8 kA, a peak duration T1 is 0.1 ms, and a no-peak duration T2 is 5.9 ms. As a result, a lower limit current value A3 is 6.9 kA, an upper limit current value A4 is 8.42 kA, a difference A5 between A4 and A3 is 1.52 kA, T2/T1 is 59.0, A2/A1 is 0.53, and rising time T3/falling time T4 is 0.53, furthermore, no expulsion occurs, and a welding result was determined to be OK.

Abstract: Provided is a spot welding method by which welding can be performed successfully while inhibiting occurrence of expulsion. First to third metal plates W1 to W3 were welded in which a ratio of a total thickness to a thickness of the first metal plate W1 is 7. In Example 1, a peak current value A1 is 14.6 kA, an effective current value A2 is 7.8 kA, a peak duration T1 is 0.1 ms, and a no-peak duration T2 is 5.9 ms. As a result, a lower limit current value A3 is 6.9 kA, an upper limit current value A4 is 8.42 kA, a difference A5 between A4 and A3 is 1.52 kA, T2/T1 is 59.0, A2/A1 is 0.53, and rising time T3/falling time T4 is 0.53, furthermore, no expulsion occurs, and a welding result was determined to be OK.

Abstract: To provide a semiconductor circuit capable of slightly generating inductance in two facing bus bars. Provided with a semiconductor circuit in which a collector-side bus bar 46 and an emitter-side bus bar 41 are arranged in parallel in a state of being isolated from each other and are fitted in a fixed manner to each other, and a inductance generation portion 411 is provided in one or both of the collector-side bus bar 46 and the emitter-side bus bar 41, the inductance generation portion 411 generating a difference in inductance between the collector-side bus bar 46 and the emitter-side bus bar 41.

Abstract: An electricity storage device is provided with a heat transfer sheet which is arranged between an electricity storage body and a water jacket and which is capable of being elastically deformed. The water jacket has formed therein a fluid distribution section in communication with a cooling fluid inlet of the water jacket, a fluid recovery section in communication with a cooling fluid outlet of the water jacket, and a heat exchange section which connects the fluid distribution section and the fluid recovery section via a fluid passageway partitioned by fins rising in the thickness direction of the water jacket. The heat transfer sheet is arranged in an area which corresponds to the heat exchange section on the surface of a body section and which does not overlap the fluid distribution section and the fluid recovery section.

Abstract: A capacitor-type power supply unit including: a positive bus to which a plurality of capacitor is connected in parallel at each positive-electrode terminal thereof with maintaining equal intervals therebetween, and extends in a parallel direction; and an negative bus to which the plurality of capacitor is connected in parallel, at each negative-electrode terminal thereof with maintaining equal intervals therebetween, and extends in the parallel direction, in which the positive bus has a positive-electrode-side external connection part that is set at a position (SD) separated from the positive-electrode first end by a range of 20% to 30% of the total length in the longitudinal direction thereof, and the negative bus has an negative-electrode-side external connection part that is set at a position (SD) separated from the negative-electrode second end by a range of 20% to 30% of the total length in the longitudinal direction thereof.

Abstract: A resistance welding method according to the present invention includes a current control step of sequentially performing a first control for maintaining a welding current being a direct current at a current value I1 (first target value) or in the vicinity of the current value I1, a second control for raising the welding current from the current value I1 to a current value I2 (second target value, I2>I1) and for subsequently maintaining the welding current at the current value I2 or in the vicinity of the current value I2, and a third control for lowering the welding current from the current value I2 to a value smaller than the current value I1, and the resistance welding method further comprises an energization step of applying the welding current while repeating the current control step plural times until a predetermined energization period of time elapses.

Abstract: A capacitor-type power supply unit including: a positive bus to which a plurality of capacitor is connected in parallel at each positive-electrode terminal thereof with maintaining equal intervals therebetween, and extends in a parallel direction; and an negative bus to which the plurality of capacitor is connected in parallel, at each negative-electrode terminal thereof with maintaining equal intervals therebetween, and extends in the parallel direction, in which the positive bus has a positive-electrode-side external connection part that is set at a position (SD) separated from the positive-electrode first end by a range of 20% to 30% of the total length in the longitudinal direction thereof, and the negative bus has an negative-electrode-side external connection part that is set at a position (SD) separated from the negative-electrode second end by a range of 20% to 30% of the total length in the longitudinal direction thereof.

Abstract: To provide a semiconductor circuit capable of slightly generating inductance in two facing bus bars. Provided with a semiconductor circuit in which a collector-side bus bar 46 and an emitter-side bus bar 41 are arranged in parallel in a state of being isolated from each other and are fitted in a fixed manner to each other, and a inductance generation portion 411 is provided in one or both of the collector-side bus bar 46 and the emitter-side bus bar 41, the inductance generation portion 411 generating a difference in inductance between the collector-side bus bar 46 and the emitter-side bus bar 41.

Abstract: A semiconductor inspection device (1) equipped with a contacting unit (7) having a contacting side surface (7a) electrically contacting a semiconductor element (3), and which inspects the semiconductor element (3) by making the contacting unit (7) electrically contact the semiconductor element (3). The contacting side surface (7a) is provided with a plurality of projecting units (13), and the semiconductor element inspection device (1) is equipped with a hitting mark detecting unit (11) configured to detect hitting marks of the projecting unit (13) transferred to the semiconductor element (3) when the contacting side surface (7a) contacts the semiconductor element (3), and a control unit (17) configured to determine whether or not an inspection of the semiconductor element (3) is performed appropriately, on the basis of the hitting marks detected by the hitting mark detecting unit (11).

Abstract: Provided are a current application device capable of improving the electrical contact between projections of a contact section and a surface electrode when applying a test current to a semiconductor element, and a method of manufacturing a semiconductor element properly tested by using the current application device. The current application device includes a contact section that has a plurality of projections, which are brought into contact with a surface electrode of a semiconductor element to apply a test current, and a pressing section that presses the contact section against the semiconductor element such that the projections penetrate a film to come in contact with the surface electrode. The contact section has a plurality of the projections on a plane that has been formed in a curved shape, and the curved-shaped plane is deformed into a planar shape by being pressed by the pressing section.

Abstract: A current applying device is provided in which a contact body which surface-contacts with an inspection target body makes contact with the surface of the inspection target body uniformly; current can be favorably applied from the contact body to the inspection target body; and the contact body alone can be replaced. A probe device 1 for applying current by being in pressure-contact with the power semiconductor H includes: a contact body 2 which surface-contacts with the power semiconductor H; and a plurality of electrically-conductive two-tier springs 31 which press the contact body 2 onto the power semiconductor H; the contact body 2 and the plurality of electrically-conductive two-tier springs 31 are separate bodies, and the plurality of electrically-conductive two-tier springs 31 electrify the contact body 2 while providing pressing force F to each of a plurality of sections of the contact body 2.

Abstract: Provided are a current application device capable of improving the electrical contact between projections of a contact section and a surface electrode when applying a test current to a semiconductor element, and a method of manufacturing a semiconductor element properly tested by using the current application device. The current application device includes a contact section that has a plurality of projections, which are brought into contact with a surface electrode of a semiconductor element to apply a test current, and a pressing section that presses the contact section against the semiconductor element such that the projections penetrate a film to come in contact with the surface electrode. The contact section has a plurality of the projections on a plane that has been formed in a curved shape, and the curved-shaped plane is deformed into a planar shape by being pressed by the pressing section.

Abstract: A semiconductor inspection device (1) equipped with a contacting unit (7) having a contacting side surface (7a) electrically contacting a semiconductor element (3), and which inspects the semiconductor element (3) by making the contacting unit (7) electrically contact the semiconductor element (3). The contacting side surface (7a) is provided with a plurality of projecting units (13), and the semiconductor element inspection device (1) is equipped with a hitting mark detecting unit (11) configured to detect hitting marks of the projecting unit (13) transferred to the semiconductor element (3) when the contacting side surface (7a) contacts the semiconductor element (3), and a control unit (17) configured to determine whether or not an inspection of the semiconductor element (3) is performed appropriately, on the basis of the hitting marks detected by the hitting mark detecting unit (11).

Abstract: A current applying device is provided in which a contact body which surface-contacts with an inspection target body makes contact with the surface of the inspection target body uniformly; current can be favorably applied from the contact body to the inspection target body; and the contact body alone can be replaced. A probe device 1 for applying current by being in pressure-contact with the power semiconductor H includes: a contact body 2 which surface-contacts with the power semiconductor H; and a plurality of electrically-conductive two-tier springs 31 which press the contact body 2 onto the power semiconductor H; the contact body 2 and the plurality of electrically-conductive two-tier springs 31 are separate bodies, and the plurality of electrically-conductive two-tier springs 31 electrify the contact body 2 while providing pressing force F to each of a plurality of sections of the contact body 2.

Abstract: An angular velocity measuring device (1) includes a first sensor (2) (vibration gyro) and a second sensor (3) (gas rate gyro). The detection output of the first sensor (2) is inputted to a high pass filter (4). Output of the filter (4) is stored and held in time series in a memory (10). Subtraction processing means (11) successively executes processing of subtracting the output of the filter (4) ?v?(t?tsd) before a predetermined time tsd from the output of the filter (4) ?v?(1). The value thus obtained is successively added to the output of the second sensor (3) ?g(t) by addition processing means (12) so as to obtain the measurement value of the angular velocity. Thus, it is possible to provide an angular velocity measuring device capable of giving an angular velocity measurement value having a high response and stability at a reasonable cost.

Abstract: An angular velocity measuring device (1) includes a first sensor (2) (vibratory gyroscope) and a second sensor (3) (gas rate gyroscope). A detected output of the first sensor (2) is input to a highpass filter (4) and an output of this filter (4) is stored in the time series into a memory (10). Subtraction means (11) sequentially performs operations of subtracting an output ?v?(t?tsd) of the filter (4) at a time a predetermined time period tsd earlier from an output ?v?(t) of the filter (4), and addition means (12) sequentially adds the value obtained by the above to an output ?g(t) of the second sensor (3), whereby an angular velocity measurement is obtained. Thereby, it is possible to provide an angular velocity measuring device whose angular velocity measurements are high in response and stability at a low price.