Abstract: A semiconductor wafer vapor phase treatment method and apparatus for dissolving an insulating film formed on a semiconductor wafer at a high speed and high purity. A liquid reagent is heated and vaporized to obtain reagent vapors capable of dissolving an object to be treated. The reagent vapors are passed through a hydrophobic porous film to intercept mists having a diameter greater than a predetermined value and obtain high purity reagent vapors. The purified reagent vapors are supplied to the cooled object. The vapors which dissolved the object are liquidized to generate droplets.

Abstract: A process is described for developing a black-and-white silver halide photosensitive material comprising treating the material with a developing solution containing a sludge preventing compound represented by the formula (I) ##STR1## wherein X represents hydrogen, a hydroxyl group, a lower alkyl group, a lower alkoxy group, a halogen atom, a carboxyl group or a sulfo group, and M.sup.1 and M.sup.2, which may be the same or different, each represents hydrogen, an alkali metal atom, or an ammonium group.