Abstract: Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

Abstract: Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

Abstract: Disclosed is a substrate material for an AlTiC-based magnetic head, which is excellent in ultra-low flying-related properties as a material for a magnetic head, such as a TPC or AAB type for use as a thin-film magnetic head slider for HDD devices and a thin-film magnetic head for tape recording devices, where a flying height between a magnetic head element and a recording medium is extremely reduced, and usable in perpendicular recording heads, HAMR heads or the like. The magnetic head substrate material consists of a sintered body which contains 10 to 50 mass % of TiCxOyNz (wherein: 0.70?x<1.0; 0<y?0.30; 0?z?0.1; and 0.70<x+y+z?1.0) having an NaCl-type crystal structure, with the remainder being ?-Al2O3, wherein compounds of Fe, Cr and Co are contained in an amount of no more than 0.02 mass % in total.