Patents by Inventor Shiomi INOUE

Shiomi INOUE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240072132
    Abstract: A semiconductor device includes: an insulated gate electrode structure provided in a semiconductor substrate; a base region; a first main electrode region; a contact plug buried in a trench penetrating the first main electrode region to reach the base region with a barrier metal film interposed; an interlayer insulating film provided with a contact hole integrally connected to the trench; a contact region provided in contact with a bottom of the trench; and a second main electrode region, wherein an opening width at a lower end of the contact hole conforms to a width at an opening of the trench, an upper part of a side wall continued from the opening of the trench has a curved surface convex to an outside, and a lower part of the side wall continuously connected to the bottom of the trench has a curved surface convex to the outside.
    Type: Application
    Filed: July 25, 2023
    Publication date: February 29, 2024
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Keisuke KOBAYASHI, Makoto ENDOU, Shiomi INOUE