Patents by Inventor Shion Hann Liaw

Shion Hann Liaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process to optimize performance and reliability of MOSFET devices
    Patent number: 5723352
    Abstract: A process for fabricating MOSFET devices, in which performance, as well as reliability enhancements, are included, has been developed. An LDD process, using first an ion implanted phosphorous step, to address hot carrier lifetime phenomena, followed by a arsenic ion implantation step, used to improve device performance, is described.
    Type: Grant
    Filed: August 3, 1995
    Date of Patent: March 3, 1998
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Jiaw-Ren Shih, Shion Hann Liaw