Patents by Inventor Shion-Hau Liaw

Shion-Hau Liaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile SRAM cell having split-gate transistors
    Patent number: 7054194
    Abstract: This specification discloses a non-volatile static random access memory (SRAM) cell with the feature of keeping data even after the power is turned off. It includes a static random access unit and a non-volatile memory unit. Therefore, it has the random access property of the SRAM normally. After the power is turned off, it can store data in the non-volatile memory unit, so that the data can be automatically restored to the static random access unit from the non-volatile memory unit when the power is turned on.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: May 30, 2006
    Assignee: Brilliance Semiconductor Inc.
    Inventors: Shion-Hau Liaw, Hung-Ming Yang
  • Combination of SRAM and MROM cells
    Patent number: 6826073
    Abstract: A new memory cell combination is disclosed. It includes a static random access memory (SRAM) unit and a mask read only memory (MROM) unit. The prior art separates the two memory units in different areas on a chip so that the circuit layout is not optimized. The disclosed cell combines them in the same area, saving more than 20% of the area.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: November 30, 2004
    Assignee: Brilliance Semiconductor Inc.
    Inventors: Shion-Hau Liaw, Li-Yeh Chen
  • Combination of SRAM and MROM cells
    Publication number: 20040004882
    Abstract: A new memory cell combination is disclosed. It includes a static random access memory (SRAM) unit and a mask read only memory (MROM) unit. The prior art separates the two memory units in different areas on a chip so that the circuit layout is not optimized. The disclosed cell combines them in the same area, saving more than 20% of the area.
    Type: Application
    Filed: June 30, 2003
    Publication date: January 8, 2004
    Inventors: Shion-Hau Liaw, Li-Yeh Chen
  • Non-volatile SRAM cell
    Publication number: 20040001373
    Abstract: This specification discloses a non-volatile static random access memory (SRAM) cell with the feature of keeping data even after the power is turned off. It includes a static random access unit and a non-volatile memory unit. Therefore, it has the random access property of the SRAM normally. After the power is turned off, it can store data in the non-volatile memory unit, so that the data can be automatically restored to the static random access unit from the non-volatile memory unit when the power is turned on.
    Type: Application
    Filed: June 27, 2003
    Publication date: January 1, 2004
    Inventors: Shion-Hau Liaw, Hung-Ming Yang