Abstract: A radio frequency matrix amplifier includes an input propagation network for successively connecting input electrodes of a first plurality of transistors. Output electrodes are successively coupled by an intermediate propagation network. The amplifier also includes a second plurality of transistors, having input electrodes successively coupled by the intermediate propagation network and output electrodes successively coupled by an output propagation network. A bias circuit for the amplifier includes an inductor connected between a last one of the second plurality of transistors and the intermediate propagation network and a plurality of capacitors disposed to connect reference electrodes of the second plurality of transistors to a reference potential. With this arrangement stages are connected in series for D.C. potentials and in cascade for r.f. potentials.

Abstract: An integrated field effect transistor capacitor structure having a capacitor connected between source and drain electrodes is described. In one embodiment, the capacitor is formed over a drain contact by providing a dielectric over said contact and an airbridge upper plate between said dielectric to the adjacent source contact. Preferably, the capacitor dielectric is the same dielectric as the FET passivation.