Abstract: A display panel includes a display area and a non-display area. The display area includes a touch electrode array consisting of a plurality of touch electrodes, and a plurality of touch signal wires, and the non-display area includes at least two fan-out routing areas. The at least two fan-out routing areas are arranged along a first boundary between the non-display area and the display area, and each fan-out routing area includes a plurality of touch leading wires. The fan-out routing area includes a fan-shaped area and a straight line area, and the fan-shaped area is located between the first boundary and the straight line area. Each touch leading wire includes a first sub-leading wire located in the fan-shaped area and a second sub-leading wire located in the straight line area.

Abstract: A display screen adjustment method and apparatus, and a device are provided. A display screen includes a first display area and a second display area, a camera component is disposed under the first display area, and light transmittance of the first display area is higher than light transmittance of the second display area. The adjustment method includes: collecting present ambient illuminance on a terminal; and when the ambient illuminance is lower than an ambient illuminance threshold, adjusting, based on a first ambient light adaptation adjustment curve, luminance corresponding to grayscale 255 of the first display area to first luminance, and adjusting, based on a second ambient light adaptation adjustment curve, luminance corresponding to grayscale 255 of the second display area to second luminance, where the first luminance is approximately equal to the second luminance.

Abstract: A display panel includes a display area and a non-display area. The display area includes a touch electrode array consisting of a plurality of touch electrodes, and a plurality of touch signal wires, and the non-display area includes at least two fan-out routing areas. The at least two fan-out routing areas are arranged along a first boundary between the non-display area and the display area, and each fan-out routing area includes a plurality of touch leading wires. The fan-out routing area includes a fan-shaped area and a straight line area, and the fan-shaped area is located between the first boundary and the straight line area. Each touch leading wire includes a first sub-leading wire located in the fan-shaped area and a second sub-leading wire located in the straight line area.

Abstract: This application provides a display panel and an electronic device. A display region of the display panel is divided into at least two pixel regions. The pixel region includes at least two subpixels. The display region includes a first display region and a second display region. Subpixel density of the first display region is less than that of the second display region. In the first display region, at least some adjacent pixel regions have different structures. By changing structures of at least some pixel regions in the first display region, an arrangement rule of structures in pixel regions in the first display region is changed to some extent, and form a long-period diffraction grating or an aperiodic diffraction grating, so that a diffraction phenomenon caused by light passing through the display panel can be mitigated.

Abstract: The present disclosure discloses an OLED panel, including: a substrate and a driving thin film transistor, a switching thin film transistor, a storage capacitor, an organic light emitting device, and a light emitting device formed on the substrate, an external voltage signal is stored in the storage capacitor via the switching thin film transistor, the external voltage signal controls a magnitude of on-current of the driving thin film transistor to control the gray scale of the organic light emitting device. The present disclosure further discloses a manufacturing method of OLED panel. In the present disclosure, the drain of the low temperature polysilicon thin film transistor is in contact with the bottom electrode of the organic light emitting device so that the current supplied to the organic light emitting device is stabilized; metal-oxide-semiconductor thin-film transistor has a low leakage current, so that a better circuit-closing effect can be achieved.

Abstract: The present disclosure discloses an OLED panel, including: a substrate and a driving thin film transistor, a switching thin film transistor, a storage capacitor, an organic light emitting device, and a light emitting device formed on the substrate, an external voltage signal is stored in the storage capacitor via the switching thin film transistor, the external voltage signal controls a magnitude of on-current of the driving thin film transistor to control the gray scale of the organic light emitting device. The present disclosure further discloses a manufacturing method of OLED panel. In the present disclosure, the drain of the low temperature polysilicon thin film transistor is in contact with the bottom electrode of the organic light emitting device so that the current supplied to the organic light emitting device is stabilized; metal-oxide-semiconductor thin-film transistor has a low leakage current, so that a better circuit-closing effect can be achieved.

Abstract: The invention provides a manufacturing method of AMOLED pixel driver circuit, by leaving only a second insulation layer (5) covering the second active area (42) as an etch-stopping layer, making an ES-type driving TFT (T2), and a BCE-type switching TFT (T1). BCE-type switching TFT (T1) has a smaller parasitic capacitance, can reduce the RC effect, and is good for controlling the alternating data signal; ES-type driving TFT (T2) has excellent device characteristics, and can provide a stable OLED current to ensure the stability and uniformity of OLED light-emission.

Abstract: The present invention provides a manufacture method of a TFT substrate and a manufactured TFT substrate. By locating the first channel region and the first lightly doped offset region between the first source and the drain, and locating the second channel region and the second lightly doped offset region between the second source and the drain, and forming the first overlapping region and the second overlapping region respectively between the drain and the gate and between the second source and the gate, thus, the paths of the current flowing from the first, the second sources to the drain and the current flowing from the drain to the first, the second sources are the same. Namely, the current path from source to the drain and the current path from the drain to the source are the same. According, the symmetry of the TFT structure is realized.

Abstract: The present invention provides a manufacture method of a TFT substrate and a manufactured TFT substrate. By locating the first channel region and the first lightly doped offset region between the first source and the drain, and locating the second channel region and the second lightly doped offset region between the second source and the drain, and forming the first overlapping region and the second overlapping region respectively between the drain and the gate and between the second source and the gate, thus, the paths of the current flowing from the first, the second sources to the drain and the current flowing from the drain to the first, the second sources are the same. Namely, the current path from source to the drain and the current path from the drain to the source are the same. According, the symmetry of the TFT structure is realized.

Abstract: The present invention provides a manufacture method of a TFT substrate and a manufactured TFT substrate. In the manufacture method of the TFT substrate according to the present invention, by locating the first lightly doped offset region and the second lightly doped offset region in the TFT, the off state current of the TFT can be reduced; meanwhile, by utilizing the first gate and the second gate to compose the dual gate structure, the influence of the first lightly doped offset region and the second lightly doped offset region to the TFT on state current can be reduced, and the first gate and the second gate are connected, and controlled by the same gate voltage, and no additional voltage is required; the structure is simple and the electrical property is excellent, and the manufactured TFT substrate possesses the better electrical property.

Abstract: The present invention provides an OLED pixel structure, comprising red, green, blue sub pixel areas, and the red, the green, the blue sub pixel areas respectively comprise a substrate, an anode formed on the substrate, a flat layer formed on the anode, an organic light emitting layer formed on the flat layer and a cathode formed on the organic light emitting layer, and an aperture area is formed on the flat layer, and the organic light emitting layer contacts the anode through the aperture area, and the anode comprises a positive electrode and a positive electrode compensation area coupled to the positive electrode, and the cathode, the positive electrode compensation area and a sandwiched layer between the cathode and the positive electrode compensation area constitute a compensation capacitor, and the compensation capacitor respectively makes total capacitance values of the red, green, blue sub pixel areas are equivalent to reach the capacitance value required by an drive circuit of the OLED element.

Abstract: The invention provides an oxide thin film transistor and a manufacturing method thereof. The manufacturing method includes sequentially forming a gate electrode, a gate insulating layer and an oxide semiconductor film on a first substrate; sequentially forming a first metal layer and a second metal layer on the oxide semiconductor film, and forming a drain electrode and a source electrode on the second metal layer, the drain electrode and the source electrode being separated by a channel and the channel exposing a portion of the first metal layer; oxidizing the exposed portion of the first metal layer; forming an insulating passivation layer and disposing contact electrodes. By the above solution, the invention can protect a back channel of the oxide thin film transistor and meanwhile can simplify manufacturing process and reduce cost.

Abstract: The present invention provides an OLED pixel structure, comprising red, green, blue sub pixel areas, and the red, the green, the blue sub pixel areas respectively comprise a substrate, an anode formed on the substrate, a flat layer formed on the anode, an organic light emitting layer formed on the flat layer and a cathode formed on the organic light emitting layer, and an aperture area is formed on the flat layer, and the organic light emitting layer contacts the anode through the aperture area, and the anode comprises a positive electrode and a positive electrode compensation area coupled to the positive electrode, and the cathode, the positive electrode compensation area and a sandwiched layer between the cathode and the positive electrode compensation area constitute a compensation capacitor, and the compensation capacitor respectively makes total capacitance values of the red, green, blue sub pixel areas are equivalent to reach the capacitance value required by an drive circuit of the OLED element.