Patents by Inventor Shiqin Niu
Shiqin Niu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136406Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.Type: ApplicationFiled: December 28, 2023Publication date: April 25, 2024Inventors: Caspar Leendertz, Thomas Basler, Paul Ellinghaus, Rudolf Elpelt, Michael Hell, Jens Peter Konrath, Shiqin Niu, Dethard Peters, Konrad Schraml, Bernd Leonhard Zippelius
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Patent number: 11888032Abstract: A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.Type: GrantFiled: December 2, 2022Date of Patent: January 30, 2024Assignee: Infineon Technologies AGInventors: Caspar Leendertz, Thomas Basler, Paul Ellinghaus, Rudolf Elpelt, Michael Hell, Jens Peter Konrath, Shiqin Niu, Dethard Peters, Konrad Schraml, Bernd Leonhard Zippelius
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Patent number: 11881512Abstract: A method includes providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench, and forming a gate electrode in the gate trench, the gate electrode including a metal structure and a semiconductor layer between the metal structure and the gate dielectric.Type: GrantFiled: November 4, 2021Date of Patent: January 23, 2024Assignee: Infineon Technologies AGInventors: Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Ravi Keshav Joshi, Shiqin Niu
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Publication number: 20230094032Abstract: A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.Type: ApplicationFiled: December 2, 2022Publication date: March 30, 2023Inventors: Caspar Leendertz, Thomas Basler, Paul Ellinghaus, Rudolf Elpelt, Michael Hell, Jens Peter Konrath, Shiqin Niu, Dethard Peters, Konrad Schraml, Bernd Leonhard Zippelius
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Patent number: 11552173Abstract: A silicon carbide device includes a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body. The gate structure has a gate length along a lateral first direction. A bottom surface and an active first gate sidewall of the gate structure are connected via a first bottom edge of the gate structure. The silicon carbide device further includes at least one source region of a first conductivity type. A shielding region of a second conductivity type is in contact with the first bottom edge of the gate structure across at least 20% of the gate length.Type: GrantFiled: August 6, 2020Date of Patent: January 10, 2023Assignee: Infineon Technologies AGInventors: Caspar Leendertz, Thomas Basler, Paul Ellinghaus, Rudolf Elpelt, Michael Hell, Jens Peter Konrath, Shiqin Niu, Dethard Peters, Konrad Schraml, Bernd Leonhard Zippelius
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Patent number: 11462611Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.Type: GrantFiled: December 4, 2020Date of Patent: October 4, 2022Assignee: Infineon Technologies AGInventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
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Publication number: 20220059659Abstract: A method includes providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench, and forming a gate electrode in the gate trench, the gate electrode including a metal structure and a semiconductor layer between the metal structure and the gate dielectric.Type: ApplicationFiled: November 4, 2021Publication date: February 24, 2022Inventors: Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Ravi Keshav Joshi, Shiqin Niu
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Patent number: 11195921Abstract: A semiconductor device includes a gate electrode and a gate dielectric. The gate electrode extends from a first surface of a silicon carbide body into the silicon carbide body. The gate dielectric is between the gate electrode and the silicon carbide body. The gate electrode includes a metal structure and a semiconductor layer between the metal structure and the gate dielectric.Type: GrantFiled: May 14, 2019Date of Patent: December 7, 2021Assignee: Infineon Technologies AGInventors: Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Ravi Keshav Joshi, Shiqin Niu
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Publication number: 20210118986Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.Type: ApplicationFiled: December 4, 2020Publication date: April 22, 2021Inventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
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Publication number: 20210050421Abstract: A silicon carbide device includes a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body. The gate structure has a gate length along a lateral first direction. A bottom surface and an active first gate sidewall of the gate structure are connected via a first bottom edge of the gate structure. The silicon carbide device further includes at least one source region of a first conductivity type. A shielding region of a second conductivity type is in contact with the first bottom edge of the gate structure across at least 20% of the gate length.Type: ApplicationFiled: August 6, 2020Publication date: February 18, 2021Inventors: Caspar Leendertz, Thomas Basler, Paul Ellinghaus, Rudolf Elpelt, Michael Hell, Jens Peter Konrath, Shiqin Niu, Dethard Peters, Konrad Schraml, Bernd Leonhard Zippelius
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Patent number: 10896952Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.Type: GrantFiled: February 21, 2020Date of Patent: January 19, 2021Assignee: Infineon Technologies AGInventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
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Publication number: 20200194544Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.Type: ApplicationFiled: February 21, 2020Publication date: June 18, 2020Inventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
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Patent number: 10586845Abstract: According to an embodiment of a semiconductor device, the device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. Rows of source regions of a first conductivity type are formed in the SiC substrate and extend lengthwise in parallel in a second direction which is transverse to the first direction. Rows of body regions of a second conductivity type opposite the first conductivity type are formed in the SiC substrate below the rows of source regions. Rows of body contact regions of the second conductivity type are formed in the SiC substrate. The rows of body contact regions extend lengthwise in parallel in the second direction. First shielding regions of the second conductivity type are formed deeper in the SiC substrate than the rows of body regions.Type: GrantFiled: November 16, 2018Date of Patent: March 10, 2020Assignee: Infineon Technologies AGInventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
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Publication number: 20190355819Abstract: A semiconductor device includes a gate electrode and a gate dielectric. The gate electrode extends from a first surface of a silicon carbide body into the silicon carbide body. The gate dielectric is between the gate electrode and the silicon carbide body. The gate electrode includes a metal structure and a semiconductor layer between the metal structure and the gate dielectric.Type: ApplicationFiled: May 14, 2019Publication date: November 21, 2019Inventors: Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Ravi Keshav Joshi, Shiqin Niu