Patents by Inventor Shiqin Xiao

Shiqin Xiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a dielectric film
    Patent number: 7563729
    Abstract: A method of forming a dielectric film on a substrate surface includes the steps of forming the dielectric film on the substrate surface in plural steps, and reforming, in each of the plural steps of forming the dielectric film, the dielectric film in an ambient primarily of nitrogen.
    Type: Grant
    Filed: May 24, 2005
    Date of Patent: July 21, 2009
    Assignee: Fujitsu Microelectronics Limited
    Inventors: Shiqin Xiao, Takayuki Ohba
  • Manufacture method for semiconductor device with patterned film of ZrO or the like
    Patent number: 6998303
    Abstract: An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.
    Type: Grant
    Filed: August 5, 2003
    Date of Patent: February 14, 2006
    Assignee: Fujitsu Limited
    Inventors: Yoshihiro Sugita, Yusuke Morisaki, Kiyoshi Irino, Shiqin Xiao, Takayuki Ohba
  • Method of forming a dielectric film
    Publication number: 20050282400
    Abstract: A method of forming a dielectric film on a substrate surface includes the steps of forming the dielectric film on the substrate surface in plural steps, and reforming, in each of the plural steps of forming the dielectric film, the dielectric film in an ambient primarily of nitrogen.
    Type: Application
    Filed: May 24, 2005
    Publication date: December 22, 2005
    Applicant: FUJITSU LIMITED
    Inventors: Shiqin Xiao, Takayuki Ohba
  • Manufacture method for semiconductor device with patterned film of ZrO2 or the like
    Publication number: 20040038555
    Abstract: An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.
    Type: Application
    Filed: August 5, 2003
    Publication date: February 26, 2004
    Applicant: Fujitsu Limited
    Inventors: Yoshihiro Sugita, Yusuke Morisaki, Kiyoshi Irino, Shiqin Xiao, Takayuki Ohba
  • Method for the formation of copper wiring films
    Patent number: 6562219
    Abstract: A method for the formation of copper wiring films includes the steps of forming a first copper film by a CVD method on a diffusion barrier film, which diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.
    Type: Grant
    Filed: November 16, 2001
    Date of Patent: May 13, 2003
    Assignee: Anelva Corporation
    Inventors: Akiko Kobayashi, Atsushi Sekiguchi, Tomoaki Koide, Minjuan Zhang, Hideki Sunayama, Shiqin Xiao, Kaoru Suzuki
  • Method for the formation of copper wiring films
    Publication number: 20020134686
    Abstract: A method for the formation of copper wiring films includes the steps of forming a first copper film by means of a CVD method on an insulating diffusion barrier film, which insulating diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.
    Type: Application
    Filed: November 16, 2001
    Publication date: September 26, 2002
    Inventors: Akiko Kobayashi, Atsushi Sekiguchi, Tomoaki Koide, Minjuan Zhang, Hideki Sunayama, Shiqin Xiao, Kaoru Suzuki