Abstract: The present invention, in one embodiment, relates to a process for fabricating a semiconductor device that is resistant to hot carrier induced stress. The method includes the steps of forming an oxide layer on a semiconductor substrate, the oxide layer and the semiconductor substrate forming a substrate-oxide interface, in which the interface includes at least one of silicon-hydrogen bonds or dangling silicon bonds; and exposing the interface to ultraviolet radiation and an atmosphere comprising at least one gas having at least atom capable of forming a silicon-atom bond under conditions sufficient to convert at least a portion of the at least one of silicon-hydrogen bonds or dangling silicon bonds to silicon-atom bonds.