Abstract: A photoelectric conversion device comprising a photoelectric conversion cell, as an individual pixel, comprises a first transistor having a control electrode region consisting of a semiconductor of one conduction type, and first and second main electrode regions consisting of a semiconductor of opposite conduction type of the one conduction type, for outputting a signal from the first main electrode region based on carriers transferred to the control electrode region, a carrier storage region provided adjacent the first transistor, consisting of a semiconductor of the one conduction type for storing carriers generated by light energy being received, and a second transistor, with the carrier storage region and the control electrode region of the transistor as the source and drain regions, for transferring carriers stored in the carrier storage region to the control electrode region of the transistor.

Abstract: A photoelectric conversion device has a semiconductor region for accumulating the carriers generated by photoexcitation which reads the signals according to the accumulated carriers in said semiconductor region. A stabilizing electrode is provided above the surface where the semiconductor region is formed.

Abstract: There is provided a semiconductor article together with a process for producing the same which article has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate. At least the semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of the insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.

Abstract: A method for producing a photoelectric converting device having an electrode formed across an insulating layer on a control electrode region. The control electrode region and main electrode region are formed by a self-alignment process utilizing a field insulating layer as a mask. The insulating layer is formed on the control electrode region with the electrode formed thereon.

Abstract: A photoelectric conversion device includes a light transmissive substrate having a deposition surface and a bottom surface. The bottom surface receives light and passes it through the substrate. A heterogeneous deposition surface is formed on the substrate deposition surface and has a nucleation density higher than the nucleation density of the substrate deposition surface. The heterogeneous deposition surface also has an area dimensioned to permit growth of a single nucleus of a single crystal material. A photoelectric conversion collector is formed of the single crystal material grown on the heterogeneous deposition surface. The collector receives light passed through the substrate bottom surface. Photoresponsive transistor elements are formed in and on the collector for outputting a signal corresponding to the light received by the collector through the bottom of the light transmissive substrate.

Abstract: There is provided a semiconductor article together with a process for producing the same which article has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate. At least the semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of the insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.