Abstract: A semiconductor device capable of suppressing time variation of a threshold voltage and a method of manufacturing the same. A semiconductor device according to the present invention comprises a drift layer formed on a semiconductor substrate, first well regions formed in a surface layer of the drift layer, being apart from one another, a gate insulating film formed, extending on the drift layer and each of the first well regions, a gate electrode selectively formed on the gate insulating film, a source contact hole penetrating through the gate insulating film and reaching the inside of each of the first well regions, and a residual compressive stress layer formed on at least a side surface of the source contact hole, in which a compressive stress remains.

Abstract: A silicon carbide semiconductor device that is able to increase the gate reliability, and to provide a method for manufacturing the silicon carbide semiconductor device, and that includes: a source electrode selectively formed on a source region; a gate insulating film formed so as to extend over the source region; and a gate electrode formed on the gate insulating film. The source region includes a first source region located below the source electrode, and a second source region surrounding the first source region. The doping concentration in a superficial layer of the second source region is lower than the doping concentration in a superficial layer of the first source region. The doping concentration in the second source region is higher in a deep portion than in a superficial portion thereof.

Abstract: A trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device includes a gate electrode embedded into a trench penetrating a base region. The gate electrode is disposed into a lattice shape in a planar view, and a protective diffusion layer is formed in a drift layer at the portion underlying thereof. At least one of blocks divided by the gate electrode is a protective contact region on which the trench is entirely formed. A protective contact for connecting the protective diffusion layer at a bottom portion of the trench and a source electrode is disposed on the protective contact region.

Abstract: In a semiconductor device according to the present invention, a p-type well region disposed in an outer peripheral portion of the power semiconductor device is divided into two parts, that is, an inside and an outside, and a field oxide film having a greater film thickness than the gate insulating film is provided on a well region at the outside to an inside of an inner periphery of the well region. Therefore, it is possible to prevent, in the gate insulating film, a dielectric breakdown due to the voltage generated by the flow of the displacement current in switching.

Abstract: In a high speed switching power semiconductor device having a sense pad, a high voltage is generated during switching operations in well regions under the sense pad due to a displacement current flowing through its flow path with a resistance, whereby the power semiconductor device sometimes breaks down by dielectric breakdown of a thin insulating film such as a gate insulating film. In a power semiconductor device according to the invention, sense-pad well contact holes are provided on well regions positioned under the sense pad and penetrate a field insulating film thicker than the gate insulating film to connect to the source pad, thereby improving reliability.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of the drift layer, and a source pad for electrically connecting the second well regions and a source region of the cell region through a first well contact hole provided to penetrate a gate insulating film on the second well region, a second well contact hole provided to penetrate a field insulating film on the second well region and a source contact hole.

Abstract: In a semiconductor device according to the present invention, a p-type well region disposed in an outer peripheral portion of the power semiconductor device is divided into two parts, that is, an inside and an outside, and a field oxide film having a greater film thickness than the gate insulating film is provided on a well region at the outside to an inside of an inner periphery of the well region. Therefore, it is possible to prevent, in the gate insulating film, a dielectric breakdown due to the voltage generated by the flow of the displacement current in switching.

Abstract: An LNG (liquefied natural gas) power plant has a heating/cooling device. The heating/cooling device is controlled by a command generated by a temperature control device. The temperature control device receives a heating value and a temperature of the fuel gas. The heating value of the fuel gas introduced to a gas turbine power generation unit from an LNG vaporization facility is detected by a heating value detector. The temperature of the fuel gas is detected by a temperature detector. A target temperature calculator installed in the temperature control device calculates a target temperature based on the heating value. A command generator installed in the temperature control device generates the command by comparing the target temperature and the fuel temperature.

Abstract: An LNG (liquefied natural gas) power plant has a heating/cooling device. The heating/cooling device is controlled by a command generated by a temperature control device. The temperature control device receives a heating value and a temperature of the fuel gas. The heating value of the fuel gas introduced to a gas turbine power generation unit from an LNG vaporization facility is detected by a heating value detector. The temperature of the fuel gas is detected by a temperature detector. A target temperature calculator installed in the temperature control device calculates a target temperature based on the heating value. A command generator installed in the temperature control device generates the command by comparing the target temperature and the fuel temperature.