Abstract: A control device for a vehicle mounted generator 1 includes a rectifier 2, a voltage regulator 3 and an overvoltage alarm circuit 4 which includes an overvoltage detection level modifying circuit which renders the alarm circuit insensitive to a temporary overvoltage due to the disconnection of a relatively heavy electrical load 6 of the vehicle from the battery 5. The detection level modifying circuit functions to change the junction potential of a voltage divider supplying a comparator input.

Abstract: The output current and drive torque characteristics of a vehicle generator during cold, startup periods are approximated to those of a warmed up generator by sensing the field winding current, and interrupting it for a time period prolonged by a feedback/charging capacitor (904) whenever it exceeds a reference level. The field winding current never exceeds the reference level when the generator is warmed up, whereupon the interrupting circuitry has no effect.

Abstract: A control apparatus for a vehicular generator for use in an automobile, etc., in which the temperature of the generator is detected so as to control switching of the field current of the generator when the temperature of the generator is below a predetermined value, so that the cold output current and cold drive torque of the generator are substantially the same as the hot output current and hot drive torque of the generator.

Abstract: An apparatus for controlling a generator for a vehicle for limiting the output current of the generator by controlling the field current of the generator having an operating state detector for detecting the operating state of the vehicle, a reference clock generator, a modulator for modulating the reference clock pulses for generating reference clock pulses in response to the output of the operating state detector to sequentially vary the field current.

Abstract: A P type buried layer which is buried in an N type low resistance substrate is formed directly through a diffusion after which an N type buried layer is formed through a diffusion. Thereafter, an N type high resistance layer is epitaxially grown on the entire area of the upper surface thereof.

Abstract: A semiconductor device including a power transistor and a power semiconductor diode disposed on a common semiconductor substrate is arranged such that the power diode has a withstanding voltage and a dielectric strength which are greater than that of the power transistor. The increased withstanding voltage and dielectric strength of the power semiconductor diode are effected without deteriorating the characteristics of the power transistor.

Abstract: A semiconductor element is disposed in a recess at the bottom of a flanged metallic casing through a solder layer. An electrically insulating, molded plate is fixed to the casing by having protrusions fitted into holes disposed in opposite flanges of the casing and also two opposite L-shaped members abutting against adjacent lateral walls of the casing. Six strip-shaped leads buried in and extended from the molded plate are arranged to be soldered at first ends to associated solder electrodes on the exposed surface of the semiconductor element. The element and L-shaped members are burried in a resinous material molded within the casing.

Abstract: A common emitter NPN type power transistor is directly fixed to an internal surface of a metallic housing serving as both a heat sink and a grounding terminal and a ceramic substrate provided with a thick film integrated circuit for controlling the transistor and its positive terminal perpendicular to the some is also fixed to the internal surface of the metallic housing through a layer of bonding agent to be spaced from the transistor. Alternatively the transistor may be fixed to the metallic housing through a high electrically conducting member.