Abstract: A static chuck and a workpiece push-up pin are disposed on a susceptor which is one of opposed electrodes generating plasma. The push-up pin and the susceptor are electrically connected. A grounding circuit which discharges electric charges remaining on the susceptor is disposed in parallel with an RF power supply circuit which supplies RF power to the susceptor. Thus, electric charges remaining in the power supply circuit can be discharged and an abnormal discharging between the push-up pin and the susceptor can be prevented.

Abstract: An electrostatic chuck of this invention includes a conductive film, an insulating coat formed on a susceptor to cover the conductive film, and a feeder circuit for applying a voltage to the conductive film to cause the insulating coat to generate an electrostatic attractive force. The feeder circuit includes a connecting conductor replacing a portion of the insulating coat to be electrically connected to the conductive film, a first feeder pin extending through the susceptor from its front surface side to its rear surface side and having one end portion electrically connected to the connecting conductor, an insulating member for insulating the first feeder pin from the susceptor, a second feeder pin having one end portion pressed against the other end portion of the first feeder pin to be electrically connected to the first feeder pin, and a power supply electrically connected to the second feeder pin.

Abstract: A plasma processing apparatus has a process chamber for receiving an article to be processed, a monitoring window forming part of the peripheral wall of the process chamber, a pressure leading-out port, gates, and a plasma generating device for forming an electric field and generating plasma in the process chamber. The process chamber is defined by the peripheral wall having a circular cross section. Members forming parts of the peripheral wall each have an inner face continuous with the surface of the peripheral wall and curved substantially at the same radius of curvature as the surface of the peripheral wall.

Abstract: A magnetron plasma etching apparatus comprises a chamber and a mount for supporting a substrate. A high-potential electrode connected to an RF power source is connected to the mount, and a low-potential electrode which is grounded is connected to the chamber. A rotary magnet is provided above the chamber, thereby generating a rotary magnetic field intersecting at right angles an electric field generated by both electrodes. An end-point detecting member for detecting an end-point of etching of the substrate is provided at the side of the chamber. The end-point detecting member collects mainly the light at a region near the rotation center of the magnetic field. That light component of a spectrum, which varies greatly with the progress of the etching, is extracted from the collected light, and the intensity of the light of this spectrum is converted to a first electric signal. The intensity of the collected light is converted to a second electric signal.

Abstract: A plasma generating section generates a plasma in a process vessel. A plasma process section executes a plasma process to a substance to be processed by moving the plasma generated by the plasma generating section. A sensor section outputs an electrical signal corresponding to the intensity of plasma light having a predetermined wavelength in the plasma when the plasma process is executed by the plasma process section. A smoothing section smooths the electrical signal output from the sensor section. A end-point detecting section detects an end-point of the plasma process in accordance with the signal smoothed by the smoothing section.