Abstract: The oscillating element includes a crystal blank, a pair of excitation electrodes, and a pair of pad portions. The crystal blank includes a pair of major surfaces, at least partially configured by crystal planes, and side surfaces which connect outer edges of the pair of major surfaces. Further, it includes a mesa portion and an outer peripheral portion which surrounds the mesa portion and has a thickness between the pair of major surfaces thinner than that of the mesa portion. The excitation electrodes are individually located on the pair of major surfaces. The pair of pad portions are located on one of the pairs of major surfaces and are electrically connected with the excitation electrodes. At least a portion of an edge part which is in contact with a crystal plane includes a projecting portion, which does not exceed the height of the mesa portion from the outer peripheral portion.

Abstract: A crystal vibrator according to the present invention includes a crystal blank generating thickness shear vibration, a pair of excitation electrodes on both surfaces of the crystal blank, and a pair of extraction electrodes respectively extracted from the excitation electrodes. The crystal blank includes a region provided with a plurality of hill parts which are covered by an excitation electrode. Due to hill parts, it is possible to increase adhesion to the excitation electrodes and to provide a highly reliable crystal vibrator.

Abstract: The crystal element includes: a mesa-shaped crystal piece in a substantially rectangular shape in a plan view including an oscillation section having a first protruded section and a second protruded section; excitation electrodes provided on both main surfaces of the oscillation section; leading sections provided side by side along a prescribed side of the crystal piece; and a wiring section connecting between the excitation electrodes and the leading sections. The first protruded section and the second protruded section include sloping side faces. The side face of the first protruded section located on the +X-side overlaps with the side face of the second protruded section located on the +X side, and the side face of the first protruded section located on the ?X-side overlaps with the side face of the second protruded section located on the ?X side.

Abstract: The oscillating element includes a crystal blank, a pair of excitation electrodes, and a pair of pad portions. The crystal blank includes a pair of major surfaces, at least partially configured by crystal planes, and side surfaces which connect outer edges of the pair of major surfaces. Further, it includes a mesa portion and an outer peripheral portion which surrounds the mesa portion and has a thickness between the pair of major surfaces thinner than that of the mesa portion. The excitation electrodes are individually located on the pair of major surfaces. The pair of pad portions are located on one of the pairs of major surfaces and are electrically connected with the excitation electrodes. At least a portion of an edge part which is in contact with a crystal plane includes a projecting portion, which does not exceed the height of the mesa portion from the outer peripheral portion.

Abstract: A crystal vibrator according to the present invention includes a crystal blank generating thickness shear vibration, a pair of excitation electrodes on both surfaces of the crystal blank, and a pair of extraction electrodes respectively extracted from the excitation electrodes. The crystal blank includes a region provided with a plurality of hill parts which are covered by an excitation electrode. Due to hill parts, it is possible to increase adhesion to the excitation electrodes and to provide a highly reliable crystal vibrator.

Abstract: To improve characteristics, reliability, and the like of a solar cell element, the solar cell element includes: a semiconductor substrate which includes a first main surface and a second main surface that is positioned opposite to the first main surface, and in which a p-type semiconductor region and an n-type semiconductor region are stacked in such a manner that the p-type semiconductor region is positioned closest to the first main surface and the n-type semiconductor region is positioned closest to the second main surface; a first passivation layer which is disposed on the p-type semiconductor region that is positioned closest to the first main surface, and which includes aluminum oxide; and a first protective layer that is disposed on the first passivation layer. The first protective layer includes an oxide that contains at least one kind of zirconium and hafnium.

Abstract: The crystal element includes: a mesa-shaped crystal piece in a substantially rectangular shape in a plan view including an oscillation section having a first protruded section and a second protruded section; excitation electrodes provided on both main surfaces of the oscillation section; leading sections provided side by side along a prescribed side of the crystal piece; and a wiring section connecting between the excitation electrodes and the leading sections. The first protruded section and the second protruded section include sloping side faces. The side face of the first protruded section located on the +X-side overlaps with the side face of the second protruded section located on the +X side, and the side face of the first protruded section located on the ?X-side overlaps with the side face of the second protruded section located on the ?X side.

Abstract: This solar cell element, which is increased in the conversion efficiency due to improved effect of passivation, includes a semiconductor substrate in which a p-type first semiconductor region and an n-type second semiconductor region are stacked such that the first semiconductor region is located nearmost a first principal surface side and the second semiconductor region is located nearmost a second principal surface side; and a first passivation film containing aluminum oxide and arranged on the first principal surface side of the first semiconductor region. In the inside of the first passivation film of the solar cell element, the first ratio obtained by dividing the aluminum atomic density by the oxygen atomic density is 0.613 or more and less than 0.667 and the second ratio obtained by dividing the sum of the aluminum atomic density and the hydrogen atomic density by the oxygen atomic density is 0.667 or more and less than 0.786.

Abstract: The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step. Moreover, the photoelectric converter of the present invention comprises a substrate formed from silicon; a first protective film formed from aluminum oxide; and a second protective film formed from aluminum oxide, wherein the concentration of hydrogen contained in the first protective film is higher than the concentration of hydrogen contained in the second protective film.

Abstract: To improve characteristics, reliability, and the like of a solar cell element, the solar cell element includes: a semiconductor substrate which includes a first main surface and a second main surface that is positioned opposite to the first main surface, and in which a p-type semiconductor region and an n-type semiconductor region are stacked in such a manner that the p-type semiconductor region is positioned closest to the first main surface and the n-type semiconductor region is positioned closest to the second main surface; a first passivation layer which is disposed on the p-type semiconductor region that is positioned closest to the first main surface, and which includes aluminum oxide; and a first protective layer that is disposed on the first passivation layer. The first protective layer includes an oxide that contains at least one kind of zirconium and hafnium.

Abstract: This solar cell element, which is increased in the conversion efficiency due to improved effect of passivation, includes a semiconductor substrate in which a p-type first semiconductor region and an n-type second semiconductor region are stacked such that the first semiconductor region is located nearmost a first principal surface side and the second semiconductor region is located nearmost a second principal surface side; and a first passivation film containing aluminum oxide and arranged on the first principal surface side of the first semiconductor region. In the inside of the first passivation film of the solar cell element, the first ratio obtained by dividing the aluminum atomic density by the oxygen atomic density is 0.613 or more and less than 0.667 and the second ratio obtained by dividing the sum of the aluminum atomic density and the hydrogen atomic density by the oxygen atomic density is 0.667 or more and less than 0.786.

Abstract: The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) that has a photoelectric conversion layer (2a) and is formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step.