Patents by Inventor Shiro Narikawa

Shiro Narikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4992348
    Abstract: A photosensitive member for electrophotography which comprises a conductive substrate and a photoconductive layer which is composed of an amorphous silicon layer and an amorphous silicon germanium layer containing a specific amount of hydrogen and/or halogen respectively, and being prepared by electron cyclotron resonance method respectively, which is useful for xerographic systems.
    Type: Grant
    Filed: June 27, 1989
    Date of Patent: February 12, 1991
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takashi Hayakawa, Shiro Narikawa, Kunio Ohashi
  • Patent number: 4990423
    Abstract: A photosensitive member for electrophotography which comprises a conductive substrate and a photoconductive layer, the photoconductive layer being an amorphous silicon germanium containing hydrogen and/or a halogen at a specific amount, deposited by electron cyclotron resonance method, which is useful for image formation apparatus such as a laser printer.
    Type: Grant
    Filed: June 20, 1989
    Date of Patent: February 5, 1991
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takashi Hayakawa, Shiro Narikawa, Kunio Ohashi
  • Patent number: 4971878
    Abstract: An electrophotographic photosensitive member is disclosed which comprises an electrically conductive substrate and a photoconductive layer formed on said substrate, wherein the photoconductive layer is made of amorphous silicon containing 40 atomic % or more of hydrogen and/or halogen.
    Type: Grant
    Filed: April 3, 1989
    Date of Patent: November 20, 1990
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takashi Hayakawa, Shiro Narikawa, Kunio Ohashi
  • Patent number: 4943503
    Abstract: An amorphous silicon (a-Si) photoreceptor includes an amorphous silicon (a-Si) photoconductive layer, and a surface layer disposed above the amorphous silicon (a-Si) photoconductive layer. An intermediate layer is disposed between the amorphous-silicon (a-Si) photoconductive layer and the surface layer to ensure the energy level matching. The intermediate layer is made of amorphous silicon (a-Si) doped with nitrogen and boron so as to have the energy difference of less than 0.2 eV between the bottom of the conduction bands of the surface layer and the intermediate layer.
    Type: Grant
    Filed: October 10, 1984
    Date of Patent: July 24, 1990
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hideo Nojima, Yoshimi Kojima, Eiji Imada, Toshiro Matsuyama, Takashi Hayakawa, Shiro Narikawa, Shaw Ehara
  • Patent number: 4853309
    Abstract: A photoreceptor for electrophotography including an electrically conductive substrate, a bottom layer, a photoconductive layer composed mainly of amorphous silicon, and a surface layer, in that order. Both the bottom and surface layers have a greater optical bandgap than said photoconductive layer. A first middle layer is disposed between said bottom layer and said photoconductive layer, and a second middle layer is disposed between said photoconductive layer and said surface layer. Both the first and second middle layers are composed mainly of amorphous silicon and have a concentration of doped atoms which varies from the bottom to the top of the layer.
    Type: Grant
    Filed: June 3, 1988
    Date of Patent: August 1, 1989
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takashi Hayakawa, Hideo Nojima, Yoshimi Kojima, Shiro Narikawa, Toshiro Matsuyama, Eiji Imada, Shaw Ehara
  • Patent number: 4666816
    Abstract: A method of manufacturing an electrophotographic photoreceptor having an amorphous silicon layer formed as a photoconductive layer, on an electrically conductive support member. The manufacturing method includes the steps of preparing the amorphous silicon layer as the photoconductive layer by employing Si.sub.2 H.sub.6 (disilane) as a main raw material gas through a glow discharge process, and simultaneously, adding nitrogen and boron to the main raw material gas, with the unsaturated bond being stabilized by hydrogen or hydrogen and fluorine.
    Type: Grant
    Filed: August 26, 1986
    Date of Patent: May 19, 1987
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshimi Kojima, Shiro Narikawa, Takashi Hayakawa, Hideo Nojima, Eiji Imada, Toshiro Matsuyama, Shaw Ehara
  • Patent number: 4615299
    Abstract: A plasma CVD (chemical vapor deposition) apparatus of the capacitance coupling type for effecting the chemical vapor deposition on a drum which includes an air tight chamber made of an electrically conductive material, a support provided in the chamber for supporting the drum inside the chamber in an electrically insulated relationship with the chamber, and an RF power source for supplying RF power to the drum. The chamber is grounded and, therefore, the plasma is generated between the drum and inside wall of the chamber. The apparatus is provided with means for providing a smooth surface on the drum. The drum can be used as a photoreceptor for use in an electrophotographic copying machine.
    Type: Grant
    Filed: March 7, 1985
    Date of Patent: October 7, 1986
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Toshiro Matsuyama, Takashi Hayakawa, Yoshimi Kojima, Shiro Narikawa, Shaw Ehara