Abstract: A method of manufacturing a semiconductor device, includes forming a trench surrounding a first area of a semiconductor substrate, the trench having a bottom surface and two side surfaces being opposite to each other, forming a silicon film on the bottom surface and side surfaces of the trench, forming an insulation film on the silicon film in the trench, grinding a bottom surface of the semiconductor substrate to expose the insulation film formed over the bottom surface of the trench, and forming a through electrode in the first area after grinding the bottom surface of the semiconductor substrate, the through electrode penetrating the semiconductor substrate.

Abstract: A semiconductor device includes a through electrode that penetrates through a silicon substrate, an isolation trench provided to penetrate through the silicon substrate to surround the through electrode, a first silicon film in contact with an inner surface of the isolation trench, a second silicon film in contact with an outer surface of the isolation trench, and an insulation film provided between the first and second silicon films.

Abstract: The semiconductor device according to the present invention includes a through electrode that penetrates through a silicon substrate, an isolation trench provided to penetrate through the silicon substrate to surround the through electrode, a silicon film in contact with an inner surface of the isolation trench, a silicon film in contact with an outer surface of the isolation trench, and an insulation film provided between the silicon films. According to the present invention, the silicon film within the isolation trench can be substantially regarded as a part of the silicon substrate. Therefore, even when the width of the isolation trench is increased to increase the etching rate, the width of the insulation film becoming a dead space can be made sufficiently small. Consequently, the chip area can be decreased.

Abstract: A through electrode is formed prior to fabricating a semiconductor device by using a standard manufacturing method. Aside face of the through electrode is insulated from a semiconductor substrate by an insulating film, while the top face thereof is covered with a protective insulating film. These insulating films covering the through electrode protect a conductor of the through electrode and prevent emission of a contaminant from the conductor. Standard manufacturing conditions can be applied without change.

Abstract: A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.

Abstract: A semiconductor device comprises a mounting substrate, a semiconductor element provided above said mounting substrate, a package substrate provided above said mounting substrate with said semiconductor element therebetween and electrically connected to said semiconductor element via a primary connecting bump, a liquid cooling module cooling said semiconductor element by a liquid refrigerant, in which a heat receiving section of the liquid cooling module is disposed between said semiconductor element and said mounting substrate, and a plurality of secondary connecting bumps provided between said package substrate and said mounting substrate.

Abstract: A method of manufacturing a through electrode. While using at least a first conductive film for a gate electrode as a mask, an inner trench and a peripheral trench is formed. The Inner trench is provided for an inner through electrode having a columnar semiconductor. The peripheral trench is provided for a peripheral through electrode around an annular semiconductor surrounding the inner trench. The inner trench and the peripheral trench are filled with a through electrode insulation film and a through electrode conductive film, respectively, to form an inner through electrode and a peripheral through electrode.

Abstract: The present invention includes a semiconductor element provided with an electrode passing through front and back sides. The electrode is formed as a cylinder including a hollow portion, and stress relaxing material is provided in the hollow portion, which is used to reduce stress that is induced between the semiconductor element and the electrode. The stress relaxing material is an elastic body made of resin material.

Abstract: A first insulating layer including a first contact pad made of conductive polysilicon and a second insulating layer including a second contact pad are formed over a semiconductor silicon layer. After this, a via hole for a through-hole electrode is formed until the via hole penetrates through at least the semiconductor silicon layer and the first contact pad and reaches to the second contact pad.

Abstract: A wafer (or a circuit board), which is used to perform three-dimensional mounting, has protrusion 20 which is provided in low melting point metal 15 for electrically connecting mutually joined wafers 61 and 62, and which defines an interval between mutually joined wafers 61 and 62 without being deformed at the time when low melting point metal 15 is melted. A joining structure of wafers 61 and 62 is manufactured by using wafers 61 and 62, at least one of which has protrusion 20. In the manufactured joining structure of wafers 61 and 62, wafers 61 and 62 are electrically connected to each other by low melting point metal 15, and protrusion 20, which defines the interval between wafers 61 and 62 without being deformed at the time when low melting point metal 15 is melted, is provided in low melting point metal 15.

Abstract: The semiconductor device according to the present invention includes a through electrode that penetrates through a silicon substrate, an isolation trench provided to penetrate through the silicon substrate to surround the through electrode, a silicon film in contact with an inner surface of the isolation trench, a silicon film in contact with an outer surface of the isolation trench, and an insulation film provided between the silicon films. According to the present invention, the silicon film within the isolation trench can be substantially regarded as a part of the silicon substrate. Therefore, even when the width of the isolation trench is increased to increase the etching rate, the width of the insulation film becoming a dead space can be made sufficiently small. Consequently, the chip area can be decreased.

Abstract: A three-dimensional semiconductor device is produced by laminating a plurality of semiconductor chips having through-electrodes running through semiconductor substrates, wherein each through-electrode includes an internal electrode, a ring-shaped semiconductor, and an external electrode. The internal electrode is formed using an internal conductive film and includes a plurality of pillar semiconductors, each of which is formed in a rectangular shape or a polygonal shape. The pillar semiconductors are each arranged with a prescribed distance therebetween in connection with the ring-shaped semiconductor. The internal conductive film is embedded in regions between the ring-shaped semiconductor and the pillar semiconductors and between the pillar semiconductors adjoining together. This makes it possible to form trenches having uniform depth, thus realizing a high-speed film growth with respect to the conductive film.

Abstract: A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.

Abstract: A through electrode is formed prior to fabricating a semiconductor device by using a standard manufacturing method. Aside face of the through electrode is insulated from a semiconductor substrate by an insulating film, while the top face thereof is covered with a protective insulating film. These insulating films covering the through electrode protect a conductor of the through electrode and prevent emission of a contaminant from the conductor. Standard manufacturing conditions can be applied without change.

Abstract: A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.

Abstract: A semiconductor device includes a convex portion of a first conductive type protruding from a semiconductor substrate between insulating films formed on the semiconductor substrate in an upper direction than the insulating films. A gate insulating film contains nitrogen and is formed on at least a portion of the convex portion. A gate electrode is formed on the gate insulating film to contain an impurity of a same conductive type as the first conductive type.

Abstract: A method of manufacturing a through electrode. While using at least a first conductive film for a gate electrode as a mask, an inner trench and a peripheral trench is formed. The Inner trench is provided for an inner through electrode having a columnar semiconductor. The peripheral trench is provided for a peripheral through electrode around an annular semiconductor surrounding the inner trench. The inner trench and the peripheral trench are filled with a through electrode insulation film and a through electrode conductive film, respectively, to form an inner through electrode and a peripheral through electrode.

Abstract: A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.