Abstract: Provided is a ferrite sintered magnet including: magnetoplumbite type ferrite crystal grains; and a two-grain boundary interposed between the ferrite crystal grains. The two-grain boundary contains Ca and La, and an atomic ratio Ca/La at the two-grain boundary is 0.3 to 3.0.

Abstract: Provided is a ferrite magnet including: magnetoplumbite type ferrite crystal grains; and a grain boundary phase interposed between the ferrite crystal grains. The ferrite crystal grains and the grain boundary phase respectively contain a metal element A, La, Co, and Fe. the metal element A is at least one kind of element selected from the group consisting of Sr, Ba, and Ca, and when an atomic ratio of Co to La in the ferrite crystal grains is set as RFG, and an atomic ratio of Co to La in the grain boundary phase is set as RGB, the following expression is satisfied, 0.5?RGB/RFG?0.

Abstract: A dielectric composition including a complex oxide containing bismuth, zinc, and niobium, includes a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase. When the complex oxide is represented by a composition formula BixZnyNbzO1.75+?, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20?y?0.50, and 2/3?x/z?3/2.

Abstract: A composite structure including a conductor region that is configured from a first oxide, and an insulator region that is configured from a second oxide and that surrounds the conductor region, wherein the first oxide and the second oxide are in hetero structure with each other. A powder and a fired body each having such a composite structure are also preferable.

Abstract: A dielectric composition including a complex oxide containing bismuth, zinc, and niobium, includes a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase. When the complex oxide is represented by a composition formula BixZnyNbzO1.75+?, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20?y?0.50, and 2/3?x/z?3/2.

Abstract: This dielectric film is a dielectric film comprising an oxide having a perovskite structure. The oxide comprises (1) Bi, Na and Ti, (2) at least one of Ba and Ca, and (3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y. When ratios of the numbers of atoms of Bi, Ba and Ca to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide are represented by XBi, XBa and XCa, respectively, the ratios satisfy 0.2?XBi/(XBa+XCa)?5.

Abstract: A dielectric film, contains: (1) Bi and Ti; (2) at least one element E1 selected from the group consisting of Na and K; and (3) at least one element E2 selected from the group consisting of Ba, Sr, and Ca. The dielectric film has a main phase containing an oxide that contains Bi, Ti, the element E1, and the element E2 and has a perovskite structure, and a subphase that contains Bi and has an oxygen concentration lower than that of the main phase. In a sectional surface of the dielectric film, a ratio RS of an area of the subphase to a sum of an area of the main phase and the area of the subphase is greater than or equal to 0.03 and less than or equal to 0.3.

Abstract: In a capacitor unit including a pair or a plurality of pairs of capacitors having a dielectric, a first electrode formed on the dielectric, and a second electrode formed on the dielectric, wherein voltages in reverse directions are applied between the first electrodes and the second electrodes of respective two capacitors forming a pair.

Abstract: A composite structure including a conductor region that is configured from a first oxide, and an insulator region that is configured from a second oxide and that surrounds the conductor region, wherein the first oxide and the second oxide are in hetero structure with each other. A powder and a fired body each having such a composite structure are also preferable.

Abstract: A piezoelectric film containing (K,Na)NbO3 as the main component, wherein, when a surface of the piezoelectric film was observed in a field view within a specified range, a plurality of first crystals and a plurality of second crystals are arranged in the surface of the piezoelectric film, wherein, the first crystal has a slender shape orientating toward the first orientation along the surface, and the second crystal has a slender shape orientating toward the second orientation which crosses with the first orientation along the surface.

Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0<x?0.500, 0<y?0.350, and 0.900?z?0.995. The dielectric film includes a layer containing columnar crystal grains and a layer containing spherical crystal grains, and contains as a sub-component at least one of divalent metal elements and trivalent metal elements.

Abstract: A dielectric composition contains major components that are an A-group containing major components that are at least two selected from the group consisting of Ba, Ca, and Sr and a B-group which contains a major component that is selected from Zr and Ti and which contains at least Zr. The dielectric composition contains an amorphous substance containing the A-group and the B-group and a crystalline substance containing the A-group and the B-group. In the dielectric composition, the inequality 0.5???1.5 holds, where ? is the molar ratio of the A-group to the B-group.

Abstract: A piezoelectric film containing (K,Na)NbO3 as the main component, wherein, when a surface of the piezoelectric film was observed in a field view within a specified range, a plurality of first crystals and a plurality of second crystals are arranged in the surface of the piezoelectric film, wherein, the first crystal has a slender shape orientating toward the first orientation along the surface, and the second crystal has a slender shape orientating toward the second orientation which crosses with the first orientation along the surface.

Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0<x?0.500, 0<y?0.350, and 0.900?z?0.995. The dielectric film includes a layer containing columnar crystal grains and a layer containing spherical crystal grains, and contains as a sub-component at least one of divalent metal elements and trivalent metal elements.

Abstract: A dielectric composition contains major components that are an A-group containing major components that are at least two selected from the group consisting of Ba, Ca, and Sr and a B-group which contains a major component that is selected from Zr and Ti and which contains at least Zr. The dielectric composition contains an amorphous substance containing the A-group and the B-group and a crystalline substance containing the A-group and the B-group. In the dielectric composition, the inequality 0.5???1.5 holds, where ? is the molar ratio of the A-group to the B-group.

Abstract: A dielectric ceramic composition comprising a compound expressed by a formula of ABO3, where “A” is Ba alone, or Ba and at least one selected from Ca and Sr, and “B” is Ti alone, or Ti and Zr, and having a perovskite-type crystal structure, and an oxide of a rare-earth element including Sc and Y. The dielectric ceramic composition includes a dielectric particle having a core-shell structure which has a core and a shell, the shell being present around the core and including at least “R” element, and in the shell, a region showing a maximum content rate of “R” element is a boundary region between the core and the shell.

Abstract: A method of forming an external electrode of an electronic component involving: a paste preparation step, a removal step, an element preparation step, a contact step, and a formation step. A jig with a groove into which an element forming the electronic component can be inserted is prepared. A conductive paste is filled in the groove, and then removed, so as to leave the conductive paste along a first wall surface of the groove and remove the rest. Then, element immediately above the groove is located, and inserted into the groove and moved toward the first wall surface. Finally, the element is moved along the first wall surface and toward the aperture in a state in which the ridgeline of the element is kept in contact with the first wall surface, and moved away from the first wall surface so as to separate the ridgeline from the first wall surface.

Abstract: A dielectric ceramic composition comprising a compound expressed by a formula of ABO3, where “A” is Ba alone, or Ba and at least one selected from Ca and Sr, and “B” is Ti alone, or Ti and Zr, and having a perovskite-type crystal structure, and an oxide of a rare-earth element including Sc and Y. The dielectric ceramic composition includes a dielectric particle having a core-shell structure which has a core and a shell, the shell being present around the core and including at least “R” element, and in the shell, a region showing a maximum content rate of “R” element is a boundary region between the core and the shell.

Abstract: An element forming an electronic component has a first face and a second face facing each other, and a third face adjacent to each of the first face and the second face. A method of forming an external electrode of the electronic component involves a pre-formation step, first to third formation steps, and an electrode formation step. The pre-formation step is to apply a conductive paste onto the third face and to evaporate at least a part of a liquid contained in the applied conductive paste, to form a precoat portion expected to become a part of a third electrode portion. The first formation step is to apply the conductive paste from a direction opposite to the first face, onto the first face to form a first electrode portion. The second formation step is to apply the conductive paste from a direction opposite to the second face, onto the second face to form a second electrode portion.

Abstract: A method of forming an external electrode of an electronic component involving: a paste preparation step, a removal step, an element preparation step, a contact step, and a formation step. A jig with a groove into which an element forming the electronic component can be inserted is prepared. A conductive paste is filled in the groove, and then removed, so as to leave the conductive paste along a first wall surface of the groove and remove the rest. Then, element immediately above the groove is located, and inserted into the groove and moved toward the first wall surface. Finally, the element is moved along the first wall surface and toward the aperture in a state in which the ridgeline of the element is kept in contact with the first wall surface, and moved away from the first wall surface so as to separate the ridgeline from the first wall surface.