Patents by Inventor Shirou Suyama

Shirou Suyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Display and image capture apparatus which enables eye contact
    Patent number: 5317405
    Abstract: In a display and image capture apparatus for a videophone or video teleconferencing system a half-transparent mirror array is disposed adjacent the display surface of a display and an image reflected by the half-transparent mirror array is captured by a video camera. The half-transparent mirror array is formed by a plurality of micro HMs arranged in the same plane at a predetermined inclination angle and reflects incident light from a subject toward the video camera.
    Type: Grant
    Filed: February 25, 1992
    Date of Patent: May 31, 1994
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Makoto Kuriki, Hitoshi Arai, Shigenobu Sakai, Masato Nakamura, Hideki Nakajima, Shirou Suyama, Kazutake Uehira, Noboru Hagiwara
  • Thin film silicon semiconductor device and process for producing thereof
    Patent number: 5248630
    Abstract: A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.
    Type: Grant
    Filed: March 26, 1992
    Date of Patent: September 28, 1993
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Tadashi Serikawa, Seiichi Shirai, Akio Okamoto, Shirou Suyama
  • Thin film silicon semiconductor device and process for producing thereof
    Patent number: 5132754
    Abstract: A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.
    Type: Grant
    Filed: July 21, 1988
    Date of Patent: July 21, 1992
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Tadashi Serikawa, Seiichi Shirai, Akio Okamoto, Shirou Suyama