Patents by Inventor Shirou Yoshino

Shirou Yoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of heat treatment of silicon wafer doped with boron
    Patent number: 7754585
    Abstract: A method of subjecting a silicon wafer doped with boron to a heat treatment in an argon atmosphere, wherein the argon atmosphere is replaced with a hydrogen atmosphere or a mixed gas of an argon gas and a hydrogen gas in a proper fashion, to thereby uniformize a boron concentration in the thickness direction of the surface layer of the silicon wafer doped with boron.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: July 13, 2010
    Assignee: Sumco Techxiv Corporation
    Inventors: Yuji Sato, Shirou Yoshino, Hiroshi Furukawa, Hiroyuki Matsuyama
  • Method of heat treatment of silicon wafer doped with boron
    Publication number: 20040048456
    Abstract: A method of subjecting a silicon wafer doped with boron to a heat treatment in an argon atmosphere, wherein the argon atmosphere is replaced with a hydrogen atmosphere or a mixed gas of an argon gas and a hydrogen gas in a proper fashion, to thereby uniformize a boron concentration in the thickness direction of the surface layer of the silicon wafer doped with boron.
    Type: Application
    Filed: June 2, 2003
    Publication date: March 11, 2004
    Inventors: Yuji Sato, Shirou Yoshino, Hiroshi Furukawa, Hiroyuki Matsuyama