Patents by Inventor Shiroyasu Odai

Shiroyasu Odai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6515837
    Abstract: There is provided a magnetoresistive head which is capable of suppressing the fluctuation of read output while ensuring a sufficient dielectric breakdown voltage of the shielding portions by constituting the shielding portions with a Co-based material. Namely, the lower shield film is formed of a 2-ply composite film wherein the film (12′) of the lower shield film which is disposed contacting with the lower gap insulation film (13) is constituted by an amorphous soft magnetic film, while the film (12) which is disposed away from the lower gap insulation film is constituted by a crystalline soft magnetic film, thereby making it possible to suppress the fluctuation of read output even if the gap is narrowed without deteriorating the yield relative to the dielectric breakdown.
    Type: Grant
    Filed: September 15, 2000
    Date of Patent: February 4, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Yoshihiro Hamakawa, Shiroyasu Odai, Katsumi Hoshino
  • Patent number: 6404604
    Abstract: In a magneto-resistive effect type head having provided between a lower shield layer and an upper shield layer an MR sensor with a magneto-resistive effect or a gigantic magneto-resistive effect; electrode layers electrically connected to the MR sensor; and lower and upper insulating layers magnetically and electrically isolating the MR sensor and the electrode layer from the shield layers, when the gap length is reduced and the lower and upper insulating layers are decreased in thickness, the insulating layers are more liable to a dielectric breakdown by static electricity produced in the manufacturing process of the magnetic head.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: June 11, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Shiroyasu Odai, Matahiro Komuro
  • Publication number: 20010009492
    Abstract: In a magneto-resistive effect type head having provided between a lower shield layer and an upper shield layer an MR sensor with a magneto-resistive effect or a gigantic magneto-resistive effect; electrode layers electrically connected to the MR sensor; and lower and upper insulating layers magnetically and electrically isolating the MR sensor and the electrode layer from the shield layers, when the gap length is reduced and the lower and upper insulating layers are decreased in thickness, the insulating layers are more liable to a dielectric breakdown by static electricity produced in the manufacturing process of the magnetic head.
    Type: Application
    Filed: March 29, 2001
    Publication date: July 26, 2001
    Applicant: Hitachi, Ltd.
    Inventors: Shiroyasu Odai, Matahiro Komuro
  • Patent number: 6219206
    Abstract: In a magneto-resistive effect type head having provided between a lower shield layer and an upper shield layer an MR sensor with a magneto-resistive effect or a gigantic magneto-resistive effect; electrode layers electrically connected to the MR sensor; and lower and upper insulating layers mangetically and electrically isolating the MR sensor and the electrode layer from the shield layers, when the gap length is reduced and the lower and upper insulating layers are decreased in thickness, the insulating layers are more liable to a dielectric breakdown by static electricity produced in the manufacturing process of the magnetic head.
    Type: Grant
    Filed: August 26, 1999
    Date of Patent: April 17, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Shiroyasu Odai, Matahiro Komuro