Abstract: A container cleaning apparatus comprises a solvent cleaning unit having a solvent cleaning chamber, and a rinsing unit having a rinsing chamber connected to the solvent cleaning chamber. Containers are conveyed by a conveyor through the solvent cleaning chamber and the rinsing chamber. The containers are cleaned by jetting a water-soluble or partially water-soluble solvent against the containers in the solvent cleaning chamber. Shutter devices have shutters disposed at an entrance to the solvent cleaning chamber and an exit from the solvent cleaning chamber, respectively, and capable of being moved between closed positions to close the entrance to and the exit from the solvent cleaning chamber and to isolate the solvent cleaning chamber from the rinsing chamber, and open positions to permit the containers to move from the solvent cleaning chamber to the rinsing chamber.

Abstract: A container cleaning apparatus comprises a solvent cleaning unit having a solvent cleaning chamber, and a rinsing unit having a rinsing chamber connected to the solvent cleaning chamber. Containers are conveyed by a conveyor through the solvent cleaning chamber and the rinsing chamber. The containers are cleaned by jetting a water-soluble or partially water-soluble solvent against the containers in the solvent cleaning chamber. Shutter devices have shutters disposed at an entrance to the solvent cleaning chamber and an exit from the solvent cleaning chamber, respectively, and capable of being moved between closed positions to close the entrance to and the exit from the solvent cleaning chamber and to isolate the solvent cleaning chamber from the rinsing chamber, and open positions to permit the containers to move from the solvent cleaning chamber to the rinsing chamber.

Abstract: A container cleaning apparatus comprises a solvent cleaning unit having a solvent cleaning chamber, and a rinsing unit having a rinsing chamber connected to the solvent cleaning chamber. Containers are conveyed by a conveyor through the solvent cleaning chamber and the rinsing chamber. The containers are cleaned by jetting a water-soluble or partially water-soluble solvent against the containers in the solvent cleaning chamber. Shutter devices have shutters disposed at an entrance to the solvent cleaning chamber and an exit from the solvent cleaning chamber, respectively, and capable of being moved between closed positions to close the entrance to and the exit from the solvent cleaning chamber and to isolate the solvent cleaning chamber from the rinsing chamber, and open positions to permit the containers to move from the solvent cleaning chamber to the rinsing chamber.

Abstract: A dually photosensitive composition useful as a photoresist in the manufacture of ICs and the like electronic devices, which is positively photosensitive by exposure to ultraviolet in a relatively small dose but negatively photosensitive by exposure to ultraviolet in a substantially larger dose than above or by exposure to far ultraviolet light, is obtained by admixing a positive-type photoresist material comprising a novolac resin and an o-naphthoquinone diazide compound with a bisazide compound such as 4,4'-diazidodiphenyl sulfide. The inventive photosensitive composition provides a possibility of developing an ingenious technique for patterning of a photoresist layer on the substrate such as a checkboard-like patterned layer by use of a photomask of a line-and-space pattern.

Abstract: The invention provides an aqueous alkaline developer solution for a positive-type photoresist layer for pattern-wise treatment of the surface of a substrate, e.g., semiconductor wafer. The developer solution contains a tetraalkyl ammonium hydroxide, e.g., tetramethyl ammonium hydroxide, and a trialkyl hydroxyalkyl ammonium hydroxide, e.g., trimethyl hydroxyethyl ammonium hydroxide, as the essential ingredients and the temperature dependency of the development performance thereof is noticeably smaller than that of conventional developer solutions with respect to properties of the sensitivity of the photoresist and the thickness reduction of the photoresist layer in the unexposed areas, by virtue of the compensating temperature dependencies for these properties of these two ingredients for each other.