Abstract: Methods of spatially directing the orientation and placement of multiple block copolymer (BCP) domains on isolated regions of a substrate are described. The methods involve epitaxially directing the assembly of BCP domains using spatial boundaries between regions with different surface composition, formed at the edges of isolated chemical regions on a background chemistry. Multiple vertical domains of BCP order on the isolated region, self-aligned in a direction parallel to edges of the isolated region. In some embodiments, vertical domains order on multiple isolated regions of a first chemistry of a chemical contrast pattern with horizontal domains on the regions of a second (background) chemistry of the chemical contrast pattern. Also provided herein are compositions resulting from the methods.

Abstract: Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.

Abstract: Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.

Abstract: In one embodiment, a system for solvent annealing of a block copolymer film includes a solvent annealing chamber, and a controller configured to control at least one processing parameter for inducing a super-saturation of a solvent in an atmosphere within the solvent annealing chamber. In another embodiment, a method for solvent annealing of a block copolymer film includes inducing a super-saturation of a solvent in an atmosphere within a solvent annealing chamber having a block copolymer film therein for inducing formation of polymeric domains.