Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: A display device and color filter substrate thereof are provided. The color filter substrate includes a substrate and a green color filter disposed on the substrate. A concentration of halogen in the green color filter is less than 10 ppm. The green color filter has a transmittance spectrum G(?), and CMF_Z(?) is the color matching function defined by International Commission on Illumination (CIE). A peak intensity between 380 nm and 780 nm of G(?)×CMF_Z(?) is in a range between 0.33 and 0.4.

Abstract: A color filter array includes a substrate, a light shielding layer, and color filter patterns. The light shielding layer is on the substrate and has openings exposing a surface of the substrate. Besides, the light shielding layer has a height H. The color filter patterns are located in the openings of the light shielding layer. Each color filter pattern has the maximum film thickness Lc and the minimum film thickness Ls, and the difference between the maximum film thickness Lc and the minimum film thickness Ls is ?L. The maximum film thickness Lc of each color filter pattern satisfies (m×H)<Lc<(n×H), wherein m comprises about 0.83, n comprises about 0.91, the height H of the light shielding layer satisfies a<H<b, wherein a comprises about 1.6 um and b comprises 2.22 um, and the difference ?L is less than about 0.39 um.

Abstract: A display device and color filter substrate thereof are provided. The color filter substrate includes a substrate and a green color filter disposed on the substrate. A concentration of halogen in the green color filter is less than 10 ppm. The green color filter has a transmittance spectrum G(?), and CMF_Z(?) is the color matching function defined by International Commission on Illumination (CIE). A peak intensity between 380 nm and 780 nm of G(?)×CMF_Z(?) is in a range between 0.33 and 0.4.

Abstract: A color filter array on pixel array substrate includes a substrate, an active device array, a wavelength converting layer, a first passivation layer, a second passivation layer, a color filter array, and a pixel electrode layer. The active device array is disposed on the substrate. The wavelength converting layer is disposed on the active device array and includes at least one first wavelength converting pattern. The first passivation layer is disposed on the wavelength converting layer and the active device array and covers the first wavelength converting pattern and the active device array. The color filter array is disposed on the first passivation layer and includes a plurality of first, second, and third color filter patterns disposed alternately. The first wavelength converting pattern is disposed corresponding to one first color filter pattern. The second passivation layer and the pixel electrode layer are sequentially disposed on the color filter array.

Abstract: A color filter array includes a substrate, a light shielding layer, and color filter patterns. The light shielding layer is on the substrate and has openings exposing a surface of the substrate. Besides, the light shielding layer has a height H. The color filter patterns are located in the openings of the light shielding layer. Each color filter pattern has the maximum film thickness Lc and the minimum film thickness Ls, and the difference between the maximum film thickness Lc and the minimum film thickness Ls is ?L. The maximum film thickness Lc of each color filter pattern satisfies (m×H)<Lc<(n×H), wherein m comprises about 0.83, n comprises about 0.91, the height H of the light shielding layer satisfies a<H<b, wherein a comprises about 1.6 um and b comprises 2.22 um, and the difference ?L is less than about 0.39 um.

Abstract: A color filter array and a manufacturing method thereof are provided. The color filter array includes a substrate, a light shielding structure and a plurality of color filter patterns. The substrate has a plurality of unit regions. The light shielding structure is disposed on the substrate and has a plurality of openings exposing the unit regions, and at least one sidewall of each of the openings of the light shielding structure has a plurality recess patterns. The color filter patterns are respectively disposed in the openings of the light shielding structure.