Abstract: A back plate for rapid and fluid-assisted assembly of micro light emitting elements thereon includes a substrate with a driving circuit, and blocking walls made to protrude from a top surface of the substrate. The top surface of the substrate defines grooves for accommodating and powering micro light emitting elements. Each of the blocking walls semi-surrounds one groove and defines a notch. The notches defined by each blocking wall all face a single direction and the blocking walls and notches impede and gather micro light emitting elements which are made to flow in a fluid suspension and render them much more likely to tumble into the groove.

Abstract: A back plate for rapid and fluid-assisted assembly of micro light emitting elements thereon includes a substrate with a driving circuit, and blocking walls made to protrude from a top surface of the substrate. The top surface of the substrate defines grooves for accommodating and powering micro light emitting elements. Each of the blocking walls semi-surrounds one groove and defines a notch. The notches defined by each blocking wall all face a single direction and the blocking walls and notches impede and gather micro light emitting elements which are made to flow in a fluid suspension and render them much more likely to tumble into the groove.

Abstract: A back plate for rapid and fluid-assisted assembly of micro light emitting elements thereon includes a substrate with a driving circuit, and blocking walls made to protrude from a top surface of the substrate. The top surface of the substrate defines grooves for accommodating and powering micro light emitting elements. Each of the blocking walls semi-surrounds one groove and defines a notch. The notches defined by each blocking wall all face a single direction and the blocking walls and notches impede and gather micro light emitting elements which are made to flow in a fluid suspension and render them much more likely to tumble into the groove. A method for fluid-assisted assembly is also disclosed.

Abstract: A back plate for rapid and fluid-assisted assembly of micro light emitting elements thereon includes a substrate with a driving circuit, and blocking walls made to protrude from a top surface of the substrate. The top surface of the substrate defines grooves for accommodating and powering micro light emitting elements. Each of the blocking walls semi-surrounds one groove and defines a notch. The notches defined by each blocking wall all face a single direction and the blocking walls and notches impede and gather micro light emitting elements which are made to flow in a fluid suspension and render them much more likely to tumble into the groove. A method for fluid-assisted assembly is also disclosed.

Abstract: A light-emitting diode package structure includes an array substrate, a plurality of light-emitting diodes arranged in an array on the array substrate, and a retaining wall arranged on the array substrate. The retaining wall isolates each of the plurality of light-emitting diodes.

Abstract: A light emitting diode includes a substrate, an epitaxial structure, a light absorbing material, an n-type electrode, and a p-type electrode. The epitaxial structure includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer formed sequentially on the substrate. The epitaxial structure includes a first recess and a second recess. The first recess extends toward the n-type semiconductor layer. The light absorbing material is received within the second recess. The n-type electrode is received within the first recess and forms an ohmic contact with the n-type semiconductor layer. The p-type electrode forms an ohmic contact with the p-type semiconductor layer. The p-type electrode, the light absorbing material, and the n-type electrode are sequentially spaced apart.

Abstract: An LED light source includes a connecting body and a mounting base. The mounting base includes a mounting platform having a top surface, and an LED unit connected to the top surface, the top surface having good heat-dissipating properties. The LED unit includes LEDs, an LED driving device, and a circuit board. The circuit board includes a first portion for mounting the driving device and a second portion for mounting the LEDs. The first portion is connected to the top surface. The second portion is bent away from the first portion; the LEDs being mounted to outer surface of the integral second portion.

Abstract: An LED light source includes a connecting body and a mounting base. The mounting base includes a mounting platform having a top surface, and an LED unit connected to the top surface, the top surface having good heat-dissipating properties. The LED unit includes LEDs, an LED driving device, and a circuit board. The circuit board includes a first portion for mounting the driving device and a second portion for mounting the LEDs. The first portion is connected to the top surface. The second portion is bent away from the first portion; the LEDs being mounted to outer surface of the integral second portion.

Abstract: A light emitting diode (LED) is provided. The LED includes a carrying substrate, a semiconductor composite layer and an electrode. The semiconductor composite layer is disposed on the carrying substrate, and an upper surface of the semiconductor composite layer includes a patterned surface and a flat surface. The electrode is disposed on the flat surface. A method for manufacturing the light emitting diode is provided as well.

Abstract: A light emitting diode (LED) is provided. The LED includes a carrying substrate, a semiconductor composite layer and an electrode. The semiconductor composite layer is disposed on the carrying substrate, and an upper surface of the semiconductor composite layer includes a patterned surface and a flat surface. The electrode is disposed on the flat surface. A method for manufacturing the light emitting diode is provided as well.

Abstract: A vertical light emitting diodes (LEDs) with new construction for reducing the current crowding effect and increasing the light extraction efficiency (LEE) of the LEDs is provided. By providing at least one current blocking portion corresponded to an electrode, the current flows from the electrode may be diffused or distributed more laterally instead of straight downward directly under the electrode and the current crowding effect could be reduced thereby. By providing at least one current blocking portion covered by a mirror layer to form an omni-directional reflective (ODR) structure, the internal light of the LEDs may be reflected by the ODR structure and the LEE could be increased thereby.

Abstract: A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.

Abstract: A vertical structure light emitting diode (LED) and a method of manufacturing the same are disclosed. The vertical structure LED includes a metal layer as an electrode; a number of luminescent layers formed on the metal layer for providing light beams; a spreading layer formed on the luminescent layers; a medium layer provided on the spreading layer, having an opening formed therethrough to expose the spreading layer and a roughed surface. The spreading layer facilitates diffusion of current produced by the electrode.

Abstract: A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.

Abstract: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.

Abstract: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.

Abstract: A method of forming a vertical structure light emitting diode with a heat exhaustion structure, comprising the steps of: providing a sapphire substrate; producing a number of recesses on the sapphire substrate, each of which has a depth of p; forming a buffer layer having a number of protrusions, each of which has a height of q smaller than p so that when the protrusions of the buffer layer are accommodated within the recesses of the sapphire substrate, a number of gaps are formed therebetween for heat exhaustion; growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; removing the sapphire substrate by excimer laser lift-off (LLO); roughening the medium layer; and depositing electrodes on the roughened medium layer.