Abstract: A method for forming an ohmic contact of a semiconductor structure leverages physical vapor deposition films. In some embodiments, the method may comprise forming at least one recess in a III-V semiconductor material on a substrate, forming a mask on the semiconductor material where at least the recess is left unmasked, depositing a contact transition layer of a metal nitride material in the recess using a physical vapor deposition (PVD) process, and forming a metal layer on the contact transition layer to form the ohmic contact. The ohmic contact may be formed for use in a high electron mobility transistor (HEMT), a light emitting diode (LED), and/or laser-based structures and the like. The contact transition layer may be doped or undoped material depending on the metal nitride variant used as the contact transition layer material.

Abstract: A method for forming a light emitting diode (LED) uses aluminum-based material layers and oxidation during the LED formation. In some embodiments, the method may include forming an n-type layer of the LED on a substrate, forming at least one sidewall restriction layer of the LED on the substrate with the sidewall restriction layer comprising an aluminum-based material, forming a quantum well layer of the LED on the substrate, forming a p-type layer of the LED on the substrate, exposing the substrate to water vapor, and heating the substrate to oxidize at least an outer portion of the electron blocking layer. The aluminum-based material may include aluminum indium nitride or aluminum gallium arsenide.

Abstract: A method of controlling an LED system with a control signal having a first control scheme may include providing a lighting module including a control module, an LED driver connected to the control module, and at least one LED connected to the LED driver; receiving, at the control module, the control signal having a first control scheme; comparing the first control scheme to a predetermined second control scheme; when the comparing determines that the first control scheme is the same as the predetermined second control scheme, transmitting to the LED driver a driver control signal including the predetermined second control scheme; and when the comparing determines that the first control scheme is different from the predetermined second control scheme, translating, with the control module, the first control scheme into the predetermined second control scheme and then transmitting to the LED driver a driver control signal including the predetermined second control scheme.

Abstract: A method for forming a light emitting diode (LED) uses aluminum-based material layers and oxidation during the LED formation. In some embodiments, the method may include forming an n-type layer of the LED on a substrate, forming at least one sidewall restriction layer of the LED on the substrate with the sidewall restriction layer comprising an aluminum-based material, forming a quantum well layer of the LED on the substrate, forming a p-type layer of the LED on the substrate, exposing the substrate to water vapor, and heating the substrate to oxidize at least an outer portion of the electron blocking layer. The aluminum-based material may include aluminum indium nitride or aluminum gallium arsenide.

Abstract: Methods and apparatus for processing a photonic device are provided herein. For example, methods include etching, using a plasma etch process that uses a first gas, a first epitaxial layer of material of the photonic device comprising a base layer comprising at least one of silicon, germanium, sapphire, aluminum indium gallium arsenide (AlxInyGa1-x-yAs), aluminum indium gallium phosphide (AlxInyGa1-x-yP), aluminum indium gallium nitride (AlxInyGa1-x-yN), aluminum indium gallium arsenide phosphide (AlxInyGa1-x-yAszP1-z), depositing, using a plasma deposition process that uses a second gas different from the first gas, a first dielectric layer over etched sidewalls of the first epitaxial layer of material, etching, using the first gas, a second epitaxial layer of material of the photonic device, and depositing, using the second gas, a second dielectric layer over etched sidewalls of the second epitaxial layer of material.

Abstract: A method of controlling an LED system with a control signal having a first control scheme may include providing a lighting module including a control module, an LED driver connected to the control module, and at least one LED connected to the LED driver; receiving, at the control module, the control signal having a first control scheme; comparing the first control scheme to a predetermined second control scheme; when the comparing determines that the first control scheme is the same as the predetermined second control scheme, transmitting to the LED driver a driver control signal including the predetermined second control scheme; and when the comparing determines that the first control scheme is different from the predetermined second control scheme, translating, with the control module, the first control scheme into the predetermined second control scheme and then transmitting to the LED driver a driver control signal including the predetermined second control scheme.

Abstract: A lighting module may receive control signal having a first control scheme, the lighting module including a driver including at least one channel; and a control module; where the control module translates the received first control scheme into a predetermined second control scheme, when the first control scheme is different from the predetermined second control scheme; wherein the control module generates an identity voltage correlated with the received first control scheme; wherein the control module outputs to the driver a driver control signal including the predetermined second control scheme, and the identity voltage; and wherein the driver generates a driver output based on the identity voltage and the driver control signal.

Abstract: A lighting module may receive control signal having a first control scheme, the lighting module including a driver including at least one channel; and a control module; where the control module translates the received first control scheme into a predetermined second control scheme, when the first control scheme is different from the predetermined second control scheme; wherein the control module generates an identity voltage correlated with the received first control scheme; wherein the control module outputs to the driver a driver control signal including the predetermined second control scheme, and the identity voltage; and wherein the driver generates a driver output based on the identity voltage and the driver control signal.

Abstract: There is provided a system comprising a driver and a control module, the control module capable of translating a received control signal having a first control scheme into a driver control signal having a predetermined second control scheme; and wherein the driver is configured for generating a driver output based on the identity of the first control scheme and the driver control signal. A driver, control module, and a method of controlling an LED system are also provided.

Abstract: There is provided a system comprising a driver and a control module, the control module capable of translating a received control signal having a first control scheme into a driver control signal having a predetermined second control scheme; and wherein the driver is configured for generating a driver output based on the identity of the first control scheme and the driver control signal. A driver, control module, and a method of controlling an LED system are also provided.

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing process and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device. A multi-junction cell may include a back surface field layer, a tunneling junction layer, a first active cell, and a second active cell.

Abstract: Manufacture of multi junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing processes and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing process and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: Methods of forming III-V materials using metal organic chemical vapor deposition (MOCVD) with chlorine cleans operations are described. A chlorine-clean operation may further season an MOCVD process for improved throughput for high volume manufacturing.