Abstract: A system includes a processing core built on a semiconductor substrate, the processing core having a first sub core and a second sub core, each of the first and second sub cores configured to perform a processing function, and a plurality of power rails traversing a dimension of the processing core and spanning from the first sub core to the second sub core, each of the power rails being configured to provide an operating voltage to the first and second sub cores, and wherein a boundary between the first sub core and the second sub core is irregularly shaped, and wherein each of the first and second sub cores corresponds to a respective power domain.

Abstract: A semiconductor device includes: a processing core having a plurality of sub cores, a plurality of power rails spanning from a first sub core to a second sub core of the plurality of sub cores, the plurality of power rails configured to provide an operating voltage to each of the first sub core and the second sub core, and a plurality of cells defining a boundary between the first sub core and the second sub core, each of the cells providing a discontinuity in a respective power rail, wherein the discontinuity includes a break in the respective power rail in more than one layer of the semiconductor device.

Abstract: A system includes a processing core built on a semiconductor substrate, the processing core having a first sub core and a second sub core, each of the first and second sub cores configured to perform a processing function, and a plurality of power rails traversing a dimension of the processing core and spanning from the first sub core to the second sub core, each of the power rails being configured to provide an operating voltage to the first and second sub cores, and wherein a boundary between the first sub core and the second sub core is irregularly shaped, and wherein each of the first and second sub cores corresponds to a respective power domain.

Abstract: A semiconductor device includes: a processing core having a plurality of sub cores, a plurality of power rails spanning from a first sub core to a second sub core of the plurality of sub cores, the plurality of power rails configured to provide an operating voltage to each of the first sub core and the second sub core, and a plurality of cells defining a boundary between the first sub core and the second sub core, each of the cells providing a discontinuity in a respective power rail, wherein the discontinuity includes a break in the respective power rail in more than one layer of the semiconductor device.

Abstract: Provided are systems and methods for reducing power consumption in the interface and routing circuitry associated with various core modules of an integrated circuit or system. One system includes core modules, glue logic domains adapted to interface the plurality of core modules, and a power controller electrically coupled to the glue logic domains. Each glue logic domain includes a glue logic module implemented as a soft macro with metal traces extending beyond an extent of the glue logic module. The power controller decouples power from selected glue logic domains based on control signals and/or detected power down states of core modules and/or other glue logic domains. The power controller facilitates the power transitions using logic state retention, logic state clamping, ordered or scheduled transitioning, and/or other power transition systems and methods.