Abstract: A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.

Abstract: A starting semiconductor structure includes a layer of filler material, a hard mask layer over the layer of filler material, and filler material lines over the hard mask layer. The starting semiconductor structure is placed in an etching chamber, and oxygen gas and high plasma power are inserted into the etching chamber and oxidizing, resulting in one or more of the filler material lines being oxidized, the filler material line(s) increasing in width from oxidizing, and etching the hard mask layer with a chemistry that is non-selective to the oxidized filler material lines and hard mask layer, and which has a stronger lateral etch selectivity to the oxidized filler material lines than the hard mask layer.

Abstract: A starting semiconductor structure includes a layer of filler material, a hard mask layer over the layer of filler material, and filler material lines over the hard mask layer. The starting semiconductor structure is placed in an etching chamber, and oxygen gas and high plasma power are inserted into the etching chamber and oxidizing, resulting in one or more of the filler material lines being oxidized, the filler material line(s) increasing in width from oxidizing, and etching the hard mask layer with a chemistry that is non-selective to the oxidized filler material lines and hard mask layer, and which has a stronger lateral etch selectivity to the oxidized filler material lines than the hard mask layer.

Abstract: A starting semiconductor structure includes a layer of filler material (e.g., amorphous silicon), a hard mask layer over the layer of filler material, and filler material lines over the hard mask layer. A protective layer is formed over one or more, but less than all of the filler material lines, at least one protected filler material line and at least one unprotected filler material line have a same width, and, after forming the protective layer, oxidizing unprotected filler material lines, such that the oxidized unprotected line(s) have a larger width than the protected filler material line(s).

Abstract: A starting semiconductor structure includes a layer of filler material, a hard mask layer over the layer of filler material, and filler material lines over the hard mask layer. The starting semiconductor structure is placed in an etching chamber, and oxygen gas and high plasma power are inserted into the etching chamber and oxidizing, resulting in one or more of the filler material lines being oxidized, the filler material line(s) increasing in width from oxidizing, and etching the hard mask layer with a chemistry that is non-selective to the oxidized filler material lines and hard mask layer, and which has a stronger lateral etch selectivity to the oxidized filler material lines than the hard mask layer.