Abstract: Disclosed is a memory structure that includes wordlines (WL) and cell supply lines (CSL) positioned between and parallel to voltage boost lines (VBLs). The VBLs enable capacitive coupling-based voltage boosting of the adjacent WL and/or CSL depending on whether a read or write assist is required. During a read operation, all VBLs for a selected row can be charged to create coupling capacitances with the WL and with the CSL and thereby boost both the wordline voltage (Vwl) and the cell supply voltage (Vcs) for a read assist. During a write operation, one VBL adjacent to the WL for a selected row can be charged to create a coupling capacitance with the WL only and thereby boost the Vwl for a write assist. The coupling capacitances created by charging VBLs in the structure is self-adjusting in that as the length of the rows increase so do the potential coupling capacitances.

Abstract: An apparatus includes a series of pipeline stages that have logic components connected to supply output data to latch components, timing correction blocks connected to the latch components, and a memory component connected to supply a correction pattern to the timing correction blocks. The timing correction blocks have a buffer connected to a multiplexor. The correction pattern controls whether the multiplexor receives an adjusted clock signal through the buffer to control whether the timing correction blocks supply an unadjusted clock signal or the adjusted clock signal to the latch components.

Abstract: Disclosed are embodiments of a low-leakage row decoder and a memory circuit incorporating the row decoder. The row decoder includes wordline driver circuitry including first devices (pre-drivers) and second devices (wordline drivers). Each second device is connected in series between a first device and a wordline for a row in a memory array. The first devices can be directly connected to a positive supply voltage rail and connected to a ground rail through a footer. The second devices can be connected to the positive supply voltage rail through a header and directly connected to the ground rail. The on/off states of the header and footer are controlled by clock signal-dependent control signals so that they are either concurrently on or off. With this configuration, leakage power consumption of the wordline driver circuitry is minimized while the memory structures as idle and also while it operates in a normal active mode.

Abstract: Disclosed is a memory structure that includes wordlines (WL) and cell supply lines (CSL) positioned between and parallel to voltage boost lines (VBLs). The VBLs enable capacitive coupling-based voltage boosting of the adjacent WL and/or CSL depending on whether a read or write assist is required. During a read operation, all VBLs for a selected row can be charged to create coupling capacitances with the WL and with the CSL and thereby boost both the wordline voltage (Vwl) and the cell supply voltage (Vcs) for a read assist. During a write operation, one VBL adjacent to the WL for a selected row can be charged to create a coupling capacitance with the WL only and thereby boost the Vwl for a write assist. The coupling capacitances created by charging VBLs in the structure is self-adjusting in that as the length of the rows increase so do the potential coupling capacitances.

Abstract: Disclosed are embodiments of a low-leakage row decoder and a memory circuit incorporating the row decoder. The row decoder includes wordline driver circuitry including first devices (pre-drivers) and second devices (wordline drivers). Each second device is connected in series between a first device and a wordline for a row in a memory array. The first devices can be directly connected to a positive supply voltage rail and connected to a ground rail through a footer. The second devices can be connected to the positive supply voltage rail through a header and directly connected to the ground rail. The on/off states of the header and footer are controlled by clock signal-dependent control signals so that they are either concurrently on or off. With this configuration, leakage power consumption of the wordline driver circuitry is minimized while the memory structures as idle and also while it operates in a normal active mode.

Abstract: A disclosed sense circuit for a memory circuit includes sense amplifiers that detect differences in voltage levels on complementary bitlines during read operations. Instead of the sense amplifiers having built-in footer devices that lead to significant leakage, the sense circuit incorporates a common footer device for all sense amplifiers. To ensure that this footer device has sufficient drive strength to enable voltage differential detection by each sense amplifier, the sense circuit also includes a sense signal generation and boost circuit (SSG&B circuit) that generates a sense mode control signal (SEN) to control the on/off states of the footer device and that further boosts SEN, at the appropriate time, to increase the drive current. By using the common footer device and the SSG&B circuit, leakage from the sense circuit is reduced during a pre-charge operation mode without sacrificing performance during a read operation mode. Also disclosed are associated method embodiments.

Abstract: A disclosed sense circuit for a memory circuit includes sense amplifiers that detect differences in voltage levels on complementary bitlines during read operations. Instead of the sense amplifiers having built-in footer devices that lead to significant leakage, the sense circuit incorporates a common footer device for all sense amplifiers. To ensure that this footer device has sufficient drive strength to enable voltage differential detection by each sense amplifier, the sense circuit also includes a sense signal generation and boost circuit (SSG&B circuit) that generates a sense mode control signal (SEN) to control the on/off states of the footer device and that further boosts SEN, at the appropriate time, to increase the drive current. By using the common footer device and the SSG&B circuit, leakage from the sense circuit is reduced during a pre-charge operation mode without sacrificing performance during a read operation mode. Also disclosed are associated method embodiments.

Abstract: A single-rail memory circuit includes an array of memory cells arranged in rows and columns and peripheral circuitry connected to the array for facilitating read and write operations with respect to selected memory cells. The peripheral circuitry includes, but is not limited to, boost circuits for the rows. Each boost circuit is connected to a wordline for a row and to a discrete voltage supply line for the same row. Each boost circuit for a row is configured to increase the voltage levels on the wordline and the voltage supply line for the row during a read of any selected memory cell within the row. Increasing the voltage levels on the wordline and on the voltage supply line during the read operation effectively boosts the read current. A method of operating the memory circuit reduces the probability of a read fail.

Abstract: The embodiments of the invention relate to apparatus and method for reducing electromagnetic interference (EMI) and radio frequency interference (RFI) in computer systems via a chaotic wide band frequency modulation. The chaotic noise modulator, in one embodiment, comprises: a master cell to generate a control voltage corresponding to an un-modulated reference signal; and a slave cell having a chaotic signal generator to generate a random noise signal, the slave cell coupled with the master cell and operable to generate a modulated output signal in response to the control voltage.

Abstract: The embodiments of the invention relate to apparatus and method for reducing electromagnetic interference (EMI) and radio frequency interference (RFI) in computer systems via a chaotic wide band frequency modulation. The chaotic noise modulator, in one embodiment, comprises: a master cell to generate a control voltage corresponding to an un-modulated reference signal; and a slave cell having a chaotic signal generator to generate a random noise signal, the slave cell coupled with the master cell and operable to generate a modulated output signal in response to the control voltage.

Abstract: An interface such a PCI-E interface may comprise a transmitter and a compensation circuit. In one embodiment, the transmitter may comprise a transmit driver, which may use a push-pull configuration. The transmit driver may require stable voltages such as (Vdd/2+0.25) and (Vdd/2?0.25) Volts. The compensation circuit may comprise a voltage generator circuit and a dummy driver circuit. The dummy driver may be a replica of the transmit driver. A correction module may generate correction factors based on the deviation of the voltages generated by the dummy driver from the voltages generated by the voltage generator. The voltages provided to the transmit driver are corrected based on the correction factors to compensate for the deviation.

Abstract: An interface such a PCI-E interface may comprise a transmitter and a compensation circuit. In one embodiment, the transmitter may comprise a transmit driver, which may use a push-pull configuration. The transmit driver may require stable voltages such as (Vdd/2+0.25) and (Vdd/2?0.25) Volts. The compensation circuit may comprise a voltage generator circuit and a dummy driver circuit. The dummy driver may be a replica of the transmit driver. A correction module may generate correction factors based on the deviation of the voltages generated by the dummy driver from the voltages generated by the voltage generator. The voltages provided to the transmit driver are corrected based on the correction factors to compensate for the deviation.

Abstract: A level shifter for an integrated circuit. In one embodiment, the level shifter is a bi-directional level shifter with a signal terminal located in each voltage domain that can be utilized as input or output terminal. In some embodiments, the level shifter includes transistors for cutting off the flow of current between domain power supplies when the input terminals are at a particular state. In one embodiment, only one signal line of the level shifter crosses a domain boundary.

Abstract: A glitch removal circuit that removes both positive and negative glitches from an input signal includes a delay circuit, a glitch blocking circuit, and a latch circuit. The delay circuit receives the input signal and introduces a delay into it. The glitch blocking circuit is coupled to the delay circuit, and includes two NMOS transistors and two PMOS transistors. The glitch blocking circuit receives the input signal and the delayed input signal and blocks the input signal if there is a glitch in it. The latch circuit is coupled to the output of the glitch blocking circuit. The latch circuit inverts the output of the glitch blocking circuit and stores the output on a continuous basis. The latch circuit provides glitch free signal as the output.