Abstract: A method of reducing parasitic inductance or parasitic capacitance of the present invention is to apply conductive paint to the contacts where electricity is transmitted. Through the method of the present invention, the parasitic inductance or parasitic capacitance can be reduced, and the operation method is simple, without changing the circuit design or adding any electronic circuit components, and can greatly improve the performance and stability of power transmission.

Abstract: A polymorphic lithium-silicon compounds for use in pure silicon anode of lithium-ion battery and use thereof are provided. The pure silicon anode includes nucleuses which have one or more structures of Li4.1Si_Cmcm, Li13Si4_Pbam, Li2Si_C12m1, and LiSi_I41/AZ. It was generally believed Li4.1Si_Cmcm to be a high-temperature stable phase, not presenting at room temperature or in the pure silicon anode of lithium-ion battery, but this present invention proves that Li4.1Si_Cmcm can exist in the disclosed material. After lithiation process, the pure silicon anode can have a structure of one or more of Li4.1Si_Cmcm, Li13Si4_Pbam, Li2Si_C12m1, and LiSi_I41/AZ, with extremely improved capacity. The present disclosure may increase the electrical capacity of the pure silicon anode in actual use and solve the problem of the existing pure silicon anode that the volume expansion after repeated lithiation and delithiation leads to electrode damage and battery failure.

Abstract: A polymorphic lithium-silicon compounds for use in pure silicon anode of lithium-ion battery and use thereof are provided. The pure silicon anode includes nucleuses which have one or more structures of Li4.1Si_Cmcm, Li13Si4_Pbam, Li2Si_C12m1, and LiSi_I41/AZ. It was generally believed Li4.1Si_Cmcm to be a high-temperature stable phase, not presenting at room temperature or in the pure silicon anode of lithium-ion battery, but this present invention proves that Li4.1Si_Cmcm can exist in the disclosed material. After lithiation process, the pure silicon anode can have a structure of one or more of Li4.1Si_Cmcm, Li13Si4_Pbam, Li2Si_C12m1, and LiSi_I41/AZ, with extremely improved capacity. The present disclosure may increase the electrical capacity of the pure silicon anode in actual use and solve the problem of the existing pure silicon anode that the volume expansion after repeated lithiation and delithiation leads to electrode damage and battery failure.

Abstract: A video processing method utilized in a video data processing device for processing video data is disclosed. The video data includes at least a first video data set, and the video data processing device has a memory and a video decoder. The method includes utilizing the video decoder to decode the video data for generating a display data set, driving the video decoder to select a specific video data set from the first video data set wherein the display data set does not have display data corresponding to the specific video data set, and utilizing the memory to store the display data.

Abstract: A video processing method utilized in a video data processing device for processing video data is disclosed. The video data includes at least a first video data set, and the video data processing device has a memory and a video decoder. The method includes utilizing the video decoder to decode the video data for generating a display data set, driving the video decoder to select a specific video data set from the first video data set wherein the display data set does not have display data corresponding to the specific video data set, and utilizing the memory to store the display data.