Abstract: Various embodiments may provide a method of fabricating a meta-lens structure. The method may include forming a first dielectric layer in contact with a silicon wafer. The method may also include forming a second dielectric layer in contact with the first dielectric layer. A refractive index of the second dielectric layer may be different from a refractive index of the first dielectric layer. The method may further include, in patterning the second dielectric layer. The method may additionally include removing at least a portion of the silicon wafer to expose the first dielectric layer.

Abstract: A driving backplane includes: a substrate; a first conductive layer disposed on the substrate; an insulating layer disposed on a side of the first conductive layer away from the substrate; and a second conductive layer disposed on a side of the insulating layer away from the substrate. The first conductive layer includes a first electrode, the first electrode includes a first sub-electrode and a second sub-electrode surrounding the first sub-electrode, and the second sub-electrode and the first sub-electrode have no gap therebetween. The second conductive layer includes a second electrode. An orthographic projection of the second electrode on the substrate coincides with an orthographic projection of the first sub-electrode on the substrate. The first sub-electrode, the second electrode and a portion of the insulating layer located therebetween constitute a first capacitor.

Abstract: A display panel, a preparation method thereof and a display device. The display panel has a display area and anon-display area outside the display area. The non-display area includes: a first non-display area close to the display area, a second non-display area located on one side away from the display area, of the first non-display area, and a bent area between the first non-display area and the second non-display area. The bent area includes: a substrate and a first buffer layer located on the substrate. Materials of the first buffer layer include: a first doping element and a first insulation compound. The first doping element is used for improving ductility of the first buffer layer.

Abstract: A display panel, a preparation method thereof and a display device. The display panel has a display area and anon-display area outside the display area. The non-display area includes: a first non-display area close to the display area, a second non-display area located on one side away from the display area, of the first non-display area, and a bent area between the first non-display area and the second non-display area. The bent area includes: a substrate and a first buffer layer located on the substrate. Materials of the first buffer layer include: a first doping element and a first insulation compound. The first doping element is used for improving ductility of the first buffer layer.

Abstract: The present disclosure provides an organic electroluminescent display substrate, a method for fabricating the same, and a display device. The organic electroluminescent display substrate includes: a substrate; a circuit element on the substrate; a first insulating layer on a side of the circuit element away from the substrate and having at least one groove; a first conductive portion at least partially filled in the at least one groove and at least partially electrically coupled to the circuit element; a second insulating layer on a side of the first conductive portion away from the circuit element and covering the first insulating layer and the first conductive portion; and a light-emitting element on a side of the second insulating layer away from the first conductive portion.

Abstract: A titanium-ruthenium co-doped vanadium dioxide thermosensitive film material and a preparation method thereof are provided, which relate to a technical field of uncooled infrared detectors and electronic films. The vanadium dioxide thermosensitive film material is prepared by using titanium and ruthenium as co-dopants, including a substrate and a titanium-ruthenium co-doped vanadium dioxide layer, wherein in the titanium-ruthenium co-doped vanadium dioxide layer, atomic percentages of the titanium, the ruthenium and the vanadium are respectively 4.0-7.0%, 0.5-1.5% and 25.0-30.0%, and a balance is the oxygen. The present invention also provides a preparation method of a titanium-ruthenium co-doped vanadium dioxide thermosensitive film material, including a step of using a titanium-ruthenium-vanadium alloy target as a source material and using a reactive sputtering method, or using a titanium target, a ruthenium target and a vanadium target as sputtering sources and using a co-reactive sputtering method.