Abstract: A monitoring device for mangrove soil restoration includes a body, each of four corners of a lower surface of the body is provided with a locking universal wheel, a central position of the body is provided with a piling hole passing through the body, an upper surface of the body is connected to a frame, two inner surfaces of the frame are provided with sliding grooves, the sliding grooves are movably connected to a pile device, a lower surface of the pile device is provided with a round tube, the round tube is disposed above the pilling hole, two sides of the frame are provided with two fixing holes respectively, the two fixing holes are provided a stop rod therethrough. The monitoring device avoids that soil sampling is generally conducted after deep excavation with shovel manually, which saves manpower and the surrounding soil will not affect sampling results.

Abstract: A monitoring device for mangrove soil restoration includes a body, each of four corners of a lower surface of the body is provided with a locking universal wheel, a central position of the body is provided with a piling hole passing through the body, an upper surface of the body is connected to a frame, two inner surfaces of the frame are provided with sliding grooves, the sliding grooves are movably connected to a pile device, a lower surface of the pile device is provided with a round tube, the round tube is disposed above the pilling hole, two sides of the frame are provided with two fixing holes respectively, the two fixing holes are provided a stop rod therethrough. The monitoring device avoids that soil sampling is generally conducted after deep excavation with shovel manually, which saves manpower and the surrounding soil will not affect sampling results.

Abstract: Provided is a method for producing astaxanthin, comprising: (a) performing heterotrophic cultivation of astaxanthin-producing Haematococcus pluvialis; (b) performing heterotrophic cultivation of the Haematococcus pluvialis obtained in step (a) under conditions of high acetate concentration and high dissolved oxygen concentration, where the acetate concentration is at least 1800 mg/L and the dissolved oxygen concentration is at least 2.0 mg/L; and (c) collecting algae cells from step (b) and/or harvesting astaxanthin. Also provided is a base medium for culturing Haematococcus pluvialis, a propagation feed medium, and an induction feed medium.

Abstract: A method for producing astaxanthin, comprising: (a) acquiring vegetative cells of astaxanthin-producing Haematococcus pluvialis; (b) heterotrophically culturing the vegetative cells of astaxanthin-producing Haematococcus pluvialis in a nutrient-poor culture medium containing an organic carbon source and under a no-light condition, to obtain spore cells; and (c) harvesting the spore cells and/or astaxanthin, and optionally purifying the astaxanthin. Also provided is a culture medium used in the described method.

Abstract: A thin-film transistor (TFT) includes a gate electrode, a gate insulation layer, a source electrode, a drain electrode and an active layer arranged on a base substrate. The active layer includes an un-doped a-Si layer, a first doped a-Si layer and a second doped a-Si layer. One of the source electrode and the drain electrode is in contact with the first doped a-Si layer, and the other of the source electrode and the drain electrode is in contact with the second doped a-Si layer. The source electrode and the drain electrode are on different horizontal planes and spaced apart from each other, and the un-doped a-Si layer is positioned between the source electrode and the drain electrode.

Abstract: A thin-film transistor (TFT) includes a gate electrode, a gate insulation layer, a source electrode, a drain electrode and an active layer arranged on a base substrate. The active layer includes an un-doped a-Si layer, a first doped a-Si layer and a second doped a-Si layer. One of the source electrode and the drain electrode is in contact with the first doped a-Si layer, and the other of the source electrode and the drain electrode is in contact with the second doped a-Si layer. The source electrode and the drain electrode are on different horizontal planes and spaced apart from each other, and the un-doped a-Si layer is positioned between the source electrode and the drain electrode.