Abstract: Disclosed is a method for measuring optical properties and geometric properties of a thin film material, which belongs to the field of ellipsometry. The method realizes the automation of the ellipsometry data analysis with accurate results and includes using a spline model and a forward optical property model to generate a training set; training a neural network model; sequentially inputting preliminary results of geometric parameters and spline parameters of a material obtained by inputting the measured optical characterization quantity into the neural network into the spline model and the forward optical property model to obtain a theoretical optical characterization quantity. After optimizing the neural network model by using the deviation between the theory and the measured optical characterization quantity, the predicted value of the output is the final geometric and optical property parameters of the material.

Abstract: The disclosure provides a quasi-dynamic in situ ellipsometry method and system for measuring a photoresist exposure process.

Abstract: The disclosure provides a method for ptychography position correction based on probe weighting. The method includes: collecting diffraction light field intensity information and simultaneously initializing information functions of illumination probes and a sample to be tested and probe positions; obtaining and importing an exit wave into a propagation model to obtain a simulated diffraction light field and replacing the diffraction light field intensity information to obtain an updated diffraction light field; importing the updated diffraction light field into a backpropagation model and obtaining a diffraction exit wave and updating the information functions of the sample to be tested and the illumination probes at each scan position; and forming a probe matrix around the probe positions, updating the probe positions after calculating a correlation, and repeating the above steps to iterate until the predetermined number of iterations is completed or a predetermined condition is reached.

Abstract: A method of making a thin film based structure. The method includes (a): forming an electrically conductive layer on a substrate such that the electrically conductive layer is releasably attached to the substrate. The method also includes (b): forming a ceramic or metallic thin film on the electrically conductive layer, on a side opposite the substrate. The electrically conductive layer and the substrate are arranged such that when an interface between them contacts a water-based liquid, the water-based liquid facilitates or causes release of the electrically conductive layer from the substrate, substantially without damaging the substrate.

Abstract: A method of making a thin film based structure. The method includes (a): forming an electrically conductive layer on a substrate such that the electrically conductive layer is releasably attached to the substrate. The method also includes (b): forming a ceramic or metallic thin film on the electrically conductive layer, on a side opposite the substrate. The electrically conductive layer and the substrate are arranged such that when an interface between them contacts a water-based liquid, the water-based liquid facilitates or causes release of the electrically conductive layer from the substrate, substantially without damaging the substrate.

Abstract: The present disclosure provides a method for forming piezoelectric films on surfaces of arbitrary morphologies. The method includes providing a sol for forming the piezoelectric film; spraying the sol onto the surface thereby forming a liquid film containing the sol on the surface; wiping the liquid film with a flattening tool for flattening the liquid film; drying the flattened liquid film thereby forming a gel layer; and annealing the gel layer thereby forming the piezoelectric film. The piezoelectric films with high uniformity and desired thickness can be formed on curved and even wrinkled surfaces by the present method.

Abstract: A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

Abstract: The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient rp and an s-light amplitude reflection coefficient rs of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ? of the ultra-thin film: ? = r p r s ; S2: performing a second-order Taylor expansion to ? = r p r s at df=0 while taking 2?df/? as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.

Abstract: The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tp and a transmission matrix Tt are determined by a predetermined initial value ?(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix Tp, the transmission matrix Tt, and an incident matrix Ti, a theoretical Mueller matrix spectrum MMCal(E) of the material to be measured is determined by the transfer matrix Tm. A fitting analysis is performed on the theoretical Mueller matrix spectrum MMCal(E) and a measured Mueller matrix spectrum MMExp(E) of the material to be measured to obtain the dielectric tensor of the material to be measured.

Abstract: The disclosure belongs to the technical field related to on-line measurement in manufacture of integrated circuit, which discloses a snapshot type overlay error measuring device and a measuring method thereof. The measuring method includes: the detection light is subjected to polarization and retardation in sequence to obtain measurement spectrum; Fourier analysis is performed on the measurement spectrum to obtain the frequency-domain signal of the measurement spectrum, and sub-channel frequency-domain analysis is performed on the frequency-domain signal to obtain the linear combination of the non-diagonal Mueller matrix elements of the overlay error sample to be tested; the linear combination of the non-diagonal Mueller matrix elements are processed to obtain the overlay error of the overlay sample under test. This disclosure does not need to measure all 16 Mueller matrix elements, the measurement is carried out on only a few non-diagonal Mueller matrix elements which are sensitive to overlay error.

Abstract: The present disclosure provides a method for forming piezoelectric films on surfaces of arbitrary morphologies. The method includes providing a sol for forming the piezoelectric film; spraying the sol onto the surface thereby forming a liquid film containing the sol on the surface; wiping the liquid film with a flattening tool for flattening the liquid film; drying the flattened liquid film thereby forming a gel layer; and annealing the gel layer thereby forming the piezoelectric film. The piezoelectric films with high uniformity and desired thickness can be formed on curved and even wrinkled surfaces by the present method.

Abstract: A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

Abstract: The disclosure belongs to the technical field related to on-line measurement in manufacture of integrated circuit, which discloses a snapshot type overlay error measuring device and a measuring method thereof. The measuring method includes: the detection light is subjected to polarization and retardation in sequence to obtain measurement spectrum; Fourier analysis is performed on the measurement spectrum to obtain the frequency-domain signal of the measurement spectrum, and sub-channel frequency-domain analysis is performed on the frequency-domain signal to obtain the linear combination of the non-diagonal Mueller matrix elements of the overlay error sample to be tested; the linear combination of the non-diagonal Mueller matrix elements are processed to obtain the overlay error of the overlay sample under test. This disclosure does not need to measure all 16 Mueller matrix elements, the measurement is carried out on only a few non-diagonal Mueller matrix elements which are sensitive to overlay error.

Abstract: A method and a device for real-time attitude angle measurement based on the field of view effect of the birefringent crystal are provided. The device includes a high-speed polarization measurement module and an object attitude adjustment module connected to each other. The high-speed polarization measurement module includes a polarizer unit and a real-time polarization analyzer unit, respectively located on two opposite sides of the object attitude adjustment module. The object attitude adjustment module includes an attitude angle controller, a roll angle adjustment unit, a pitch angle adjustment unit, a yaw angle adjustment unit, and a height adjustment unit respectively connected to the attitude angle controller, and a birefringent crystal. The method includes an algorithm for real-time extraction of object attitude angle according to optical parameters measured by the high-speed polarization measurement module, and a method for compensating attitude angle measurement errors.

Abstract: The present invention belongs to the field of optical detection devices, and specifically discloses a polarization modulator and a polarization measurement system, comprising a rotating compensator and a polarizer, in which the rotating compensator is a continuously rotating composite waveplate, the composite waveplate is composed of a plurality of single-waveplates of the same material, and the overall structure of the composite waveplate is determined by thicknesses and fast axis intersection angles of the respective single-waveplates according to the optimization design of the polarization characteristic transfer matrix of the polarization modulator. The polarization modulator of the invention has the advantages of simple structure, easy processing and a wide applicable wavelength range, and a wide-waveband polarization measurement system can be designed based on the polarization modulator, which is adapted to the requirements of wide-waveband precision polarization measurement.

Abstract: A method and a device for real-time attitude angle measurement based on the field of view effect of the birefringent crystal are provided. The device includes a high-speed polarization measurement module and an object attitude adjustment module connected to each other. The high-speed polarization measurement module includes a polarizer unit and a real-time polarization analyzer unit, respectively located on two opposite sides of the object attitude adjustment module. The object attitude adjustment module includes an attitude angle controller, a roll angle adjustment unit, a pitch angle adjustment unit, a yaw angle adjustment unit, and a height adjustment unit respectively connected to the attitude angle controller, and a birefringent crystal. The method includes an algorithm for real-time extraction of object attitude angle according to optical parameters measured by the high-speed polarization measurement module, and a method for compensating attitude angle measurement errors.

Abstract: The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tp and a transmission matrix Tt are determined by a predetermined initial value ?(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix Tp, the transmission matrix Tt, and an incident matrix Ti. Then, a theoretical Mueller matrix spectrum MMCal(E) of the material to be measured is determined by the transfer matrix Tm. A fitting analysis is performed on the theoretical Mueller matrix spectrum MMCal(E) and a measured Mueller matrix spectrum MMExp(E) of the material to be measured to obtain the dielectric tensor of the material to be measured. The obtained result is comprehensive and reliable, which is suitable for solving dielectric tensors of various materials.

Abstract: A material optical transition analysis method and system are provided, the method includes: determining a dielectric function spectrum of a material to be analyzed, calculating a second derivative spectrum of the dielectric function spectrum related to the excitation light energy, and performing the CP fitting analysis on the second derivative spectrum to obtain a CP analysis result diagram of the material; drawing an energy band structure diagram and a PDOS diagram of the material, and drawing an energy difference diagram between CBs and VBs according to the energy band structure diagram of the material; determining spatial positions of CPs and the corresponding CBs and the VBs according to the CP analysis result diagram of the material and the energy difference diagram between the CBs and the VBs; and finally indicating the CBs and the VBs in the energy band structure diagram, and determining the particle types participating in formation of the CPs in the PDOS diagram to complete the material optical transi

Abstract: The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient rp and an s-light amplitude reflection coefficient rs of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ? of the ultra-thin film: ? = r p r s ; S2: performing a second-order Taylor expansion to ? = r p r s at df=0 while taking 2?df/? as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.

Abstract: A material optical transition analysis method and system are provided, the method includes: determining a dielectric function spectrum of a material to be analyzed, calculating a second derivative spectrum of the dielectric function spectrum related to the excitation light energy, and performing the CP fitting analysis on the second derivative spectrum to obtain a CP analysis result diagram of the material; drawing an energy band structure diagram and a PDOS diagram of the material, and drawing an energy difference diagram between CBs and VBs according to the energy band structure diagram of the material; determining spatial positions of CPs and the corresponding CBs and the VBs according to the CP analysis result diagram of the material and the energy difference diagram between the CBs and the VBs; and finally indicating the CBs and the VBs in the energy band structure diagram, and determining the particle types participating in formation of the CPs in the PDOS diagram to complete the material optical transi