Abstract: An epitaxial apparatus, including a supporting member to support a substrate; an external wall provided to surround the supporting member from the sides; an inner lid member provided in a removable manner on the external wall and covering at least a part of a gap between the supporting member and the external wall; an upper lid member that covers the substrate in a region surrounded by the external wall; a holding member that is held by the external wall, holds the upper lid member so that the upper lid member is sandwiched between the holding member and the external wall, and has a cooling unit to cool down a portion that holds the upper lid member; a heating unit; and a covering member provided so as to cover the surface of at least one of the upper lid member and the holding member.

Abstract: This epitaxial apparatus includes: a supporting member to support a substrate; an external wall that is provided to surround the supporting member from the sides and that has a gas supply port for supplying gas on the substrate; an inner lid member provided in a removable manner on the external wall and covering at least a part of a gap between the supporting member and the external wall; an upper lid member that covers the substrate in a region surrounded by the external wall; a holding member that is held by the external wall, holds the upper lid member so that the upper lid member is sandwiched between the holding member and the external wall, and has a cooling unit to cool down a portion that holds the upper lid member; a heating unit; and a covering member provided so as to cover the surface of at least one of the upper lid member and the holding member.

Abstract: It is difficult to keep a wafer at a prescribed temperature in epitaxial growth and etching, leading to a possibility of variations in quality, but a thermal processing apparatus according to the present invention has a learning-modifying means in a controlling means to learn and modify an output s1 from a radiation thermometer based on the output s1 from the radiation thermometer, a supplied electric energy P to a heating means, and an output s2 from a radiation thermometer.

Abstract: It is difficult to keep a wafer at a prescribed temperature in epitaxial growth and etching, leading to a possibility of variations in quality, but a thermal processing apparatus according to the present invention has a learning-modifying means in a controlling means to learn and modify an output s1 from a radiation thermometer based on the output s1 from the radiation thermometer, a supplied electric energy P to a heating means, and an output s2 from a radiation thermometer.