Abstract: A low resistance indium oxide conductive film is made on a substrate in an atmosphere for vacuum evaporation or sputtering where aqueous vapor or gas mixed with the vapor is introduced or wherein aqueous vapor is generated, by reactive vacuum evaporation or sputtering in said atmosphere using indium oxide or metallic indium as starting material.

Abstract: This invention relates to a method for easily vacuum depositing a reflection-proof film having a required refractive index on a substrate such as of lens or semiconductor. Two or more substances each having a different refractive index are mixed in such a proportion that the resultant mixture will acquire a required refractive index. Then, this mixture is divided into a plurality of equal proportions each of an amount to give a vacuum deposited film having a thickness of not more than 1/20 .lambda.. If the vaporization temperatures of the two substances differ by more than 400.degree.C, a two layer film will result. The fractions of the mixture are vacuum deposited consecutively one on top of another until the accumulated total of film thickness reaches a predetermined value.