Patents by Inventor Shizuo Kondo
Shizuo Kondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8295057Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: GrantFiled: May 25, 2010Date of Patent: October 23, 2012Assignee: Murata Manufacturing Co., Ltd.Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Patent number: 7817437Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: GrantFiled: February 27, 2009Date of Patent: October 19, 2010Assignee: Renensas Electronics CorporationInventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Publication number: 20100231304Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: ApplicationFiled: May 25, 2010Publication date: September 16, 2010Applicant: RENESAS TECHNOLOGY CORP.Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Publication number: 20090161329Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: ApplicationFiled: February 27, 2009Publication date: June 25, 2009Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Patent number: 7525813Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: GrantFiled: October 1, 2007Date of Patent: April 28, 2009Assignees: Renesas Technology Corp., Hitachi Tohbu Semiconductor, Ltd.Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Publication number: 20080048777Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: ApplicationFiled: October 1, 2007Publication date: February 28, 2008Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Publication number: 20070001300Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: ApplicationFiled: June 13, 2006Publication date: January 4, 2007Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Patent number: 7078975Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.Type: GrantFiled: October 12, 2005Date of Patent: July 18, 2006Assignee: Renesas Technology Corp.Inventors: Kiichi Yamashita, Tomonori Tanoue, Shizuo Kondo
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Patent number: 7068521Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: GrantFiled: August 2, 2005Date of Patent: June 27, 2006Assignees: Renesas Technology Corp., Hitachi Tohbu Semiconductor, Ltd.Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Publication number: 20060028277Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control Voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.Type: ApplicationFiled: October 12, 2005Publication date: February 9, 2006Inventors: Kiichi Yamashita, Tomonori Tanoue, Shizuo Kondo
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Publication number: 20050269590Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: ApplicationFiled: August 2, 2005Publication date: December 8, 2005Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Patent number: 6958656Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.Type: GrantFiled: June 29, 2004Date of Patent: October 25, 2005Assignee: Renesas Technology Corp.Inventors: Kiichi Yamashita, Tomonori Tanoue, Shizuo Kondo
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Patent number: 6943441Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: GrantFiled: November 12, 2002Date of Patent: September 13, 2005Assignees: Renesas Technology Corp., Hitachi Tohbu Semiconductor, Ltd.Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Publication number: 20040232990Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.Type: ApplicationFiled: June 29, 2004Publication date: November 25, 2004Applicant: Renesas Technology Corp.Inventors: Kiichi Yamashita, Tomonori Tanoue, Shizuo Kondo
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Patent number: 6771128Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.Type: GrantFiled: October 20, 2000Date of Patent: August 3, 2004Assignee: Renesas Technology Corp.Inventors: Kiichi Yamashita, Tomonori Tanoue, Shizuo Kondo
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Publication number: 20030102574Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: ApplicationFiled: November 12, 2002Publication date: June 5, 2003Applicant: Hitachi, Ltd.Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Patent number: 6489680Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: GrantFiled: October 5, 2001Date of Patent: December 3, 2002Assignees: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Publication number: 20020069135Abstract: A multi-dimensional order making and receiving business matching system for matching a want-to-buy business and a want-to-sell business selected among from a number of want-to-sell businesses in the Internet is described. The matching system comprising a multi-dimensional space as defined with a plurality of variables in order to identify the work content of the want-to-sell business to be matched, and a database which is configured to be accessed in correspondence with the respective points of the multi-dimensional space. The work information of a want-to-sell business is registered in the multi-dimensional order making and receiving business matching system by registering the work information in correspondence with one of the respective points of the multi-dimensional space. The work information of the want-to-sell business to be matched is accessed by searching the database with values which are given to the respective variables of the multi-dimensional space.Type: ApplicationFiled: December 31, 2001Publication date: June 6, 2002Inventors: Shizuo Kondo, Yasuhiro Senda, Masakatsu Nakagawa
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Publication number: 20020015291Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: ApplicationFiled: October 5, 2001Publication date: February 7, 2002Applicant: Hitachi, Ltd.Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita
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Patent number: 6330165Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.Type: GrantFiled: July 1, 1999Date of Patent: December 11, 2001Assignees: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.Inventors: Iwamichi Kohjiro, Yasuhiro Nunogawa, Sakae Kikuchi, Shizuo Kondo, Tetsuaki Adachi, Osamu Kagaya, Kenji Sekine, Eiichi Hase, Kiichi Yamashita