Abstract: In a process for projecting or irradiating a pattern on a resist film or the like on a substrate such as a semiconductive wafer, the entire area of the resist film is subjected to a pre-exposure at an intensity less than a sensitivity or a critical exposure level of the resist film at which the resist at a selected (exposed or unexposed) area may be completely dissolved away and then a desired pattern is projected or irradiated on the pre-exposed resist film. These steps may be reversed. In both cases, the apparent sensitivity of the resist film may be improved so that the pattern making time may become very short. An apparatus for carrying out the above process is also disclosed.