Patents by Inventor Shizuyo Noiri
Shizuyo Noiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6955936Abstract: An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the third metal layer is formed by etching on the third metal layer and covers the sides of the first, second, and third metal layers. The second metal layer is made of gold (Au). The first metal layer is made of an element which has ionization potential lower than gold (Au). The third metal is made of an element which has adhesiveness to the protection film stronger than that of gold (Au). Consequently, this structure of the electrode pad improves the adhesive strength between the protection layer and the third meal layer and prevents the etching of the sides of the protection film. Furthermore, the contact resistance between the semiconductor and the electrode pad is lowered and, thus, ohmic characteristic of the electrode pad is improved.Type: GrantFiled: September 26, 2003Date of Patent: October 18, 2005Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Shigemi Horiuchi
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Patent number: 6734468Abstract: An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the third metal layer is formed by etching on the third metal layer and covers the sides of the first, second, and third metal layers. The second metal layer is made of gold (Au). The first metal layer is made of an element which has ionization potential lower than gold (Au). The third metal is made of an element which has adhesiveness to the protection film stronger than that of gold (Au). Consequently, this structure of the electrode pad improves the adhesive strength between the protection layer and the third meal layer and prevents the etching of the sides of the protection film. Furthermore, the contact resistance between the semiconductor and the electrode pad is lowered and, thus, ohmic characteristic of the electrode pad is improved.Type: GrantFiled: May 30, 1997Date of Patent: May 11, 2004Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Shigemi Horiuchi
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Publication number: 20040065892Abstract: An electrode pad for e Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the third metal layer is formed by etching on the third metal layer and covers the sides of the first, second, and third metal layers. The second metal layer is made of gold (Au). The first metal layer is made of an element which has ionization potential lower than gold (Au). The third metal is made of an element which has adhesiveness to the protection film stronger than that of gold (Au). Consequently, this structure of the electrode pad improves the adhesive strength between the protection layer and the third meal layer and prevents the etching of the sides of the protection film. Furthermore, the contact resistance between the semiconductor and the electrode pad is lowered and, thus, ohmic characteristic of the electrode pad is improved.Type: ApplicationFiled: September 26, 2003Publication date: April 8, 2004Applicant: Toyoda Gosei Co., Ltd.Inventors: Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Shigemi Horiuchi
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Patent number: 6589808Abstract: A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.Type: GrantFiled: October 10, 2001Date of Patent: July 8, 2003Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiaki Chiyo, Shizuyo Noiri, Naoki Shibata, Jun Ito
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Patent number: 6573117Abstract: A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.Type: GrantFiled: January 24, 2002Date of Patent: June 3, 2003Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Masanori Murakami, Yasuo Koide, Jun Ito
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Patent number: 6500689Abstract: A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.Type: GrantFiled: March 29, 2001Date of Patent: December 31, 2002Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Masanori Murakami, Yasuo Koide, Jun Ito
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Publication number: 20020072204Abstract: A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.Type: ApplicationFiled: January 24, 2002Publication date: June 13, 2002Inventors: Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Masanori Murakami, Yasuo Koide, Jun Ito
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Publication number: 20020042159Abstract: A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.Type: ApplicationFiled: October 10, 2001Publication date: April 11, 2002Applicant: Toyoda Gosei Co., Ltd.Inventors: Toshiaki Chiyo, Shizuyo Noiri, Naoki Shibata, Jun Ito
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Publication number: 20020000643Abstract: An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the third metal layer is formed by etching on the third metal layer and covers the sides of the first, second, and third metal layers. The second metal layer is made of gold (Au). The first metal layer is made of an element which has ionization potential lower than gold (Au). The third metal is made of an element which has adhesiveness to the protection film stronger than that of gold (Au). Consequently, this structure of the electrode pad improves the adhesive strength between the protection layer and the third meal layer and prevents the etching of the sides of the protection film. Furthermore, the contact resistance between the semiconductor and the electrode pad is lowered and, thus, ohmic characteristic of the electrode pad is improved.Type: ApplicationFiled: May 30, 1997Publication date: January 3, 2002Inventors: TOSHIYA UEMURA, NAOKI SHIBATA, SHIZUYO NOIRI, SHIGEMI HORIUCHI
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Patent number: 6335217Abstract: A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.Type: GrantFiled: March 14, 2000Date of Patent: January 1, 2002Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiaki Chiyo, Shizuyo Noiri, Naoki Shibata, Jun Ito
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Patent number: 6291840Abstract: A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting patten which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.Type: GrantFiled: November 26, 1997Date of Patent: September 18, 2001Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Masanori Murakami, Yasuo Koide, Jun Ito
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Publication number: 20010018226Abstract: A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.Type: ApplicationFiled: March 29, 2001Publication date: August 30, 2001Inventors: Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Masanori Murakami, Yasuo Koide, Jun Ito
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Patent number: 6100545Abstract: A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.Type: GrantFiled: October 13, 1998Date of Patent: August 8, 2000Assignee: Toyoda Gosei Co., Ltd.Inventors: Toshiaki Chiyo, Shizuyo Noiri, Naoki Shibata, Jun Ito